Langdon; Steven

Patent Applications and Registrations

Patent applications and USPTO patent grants for Langdon; Steven.The latest application filed is for "reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures".

Company Profile

0.11.7

Langdon; Steven - Dresden DE
Langdon; Steven - Dresdon N/A DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structures Grant 9,425,052 - Scheiper , et al. August 23, 2	2016-08-23
Reduced Threshold Voltage-width Dependency In Transistors Comprising High-k Metal Gate Electrode Structures App 20150228490 - Scheiper; Thilo ; et al.	2015-08-13
Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures Grant 9,048,336 - Scheiper , et al. June 2, 2	2015-06-02
Low-diffusion drain and source regions in CMOS transistors for low power/high performance applications Grant 8,664,068 - Hoentschel , et al. March 4, 2	2014-03-04
Methods for fabricating integrated circuits using non-oxidizing resist removal Grant 8,586,440 - Flachowsky , et al. November 19, 2	2013-11-19
Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same Grant 8,508,001 - Langdon , et al. August 13, 2	2013-08-13
Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy Grant 8,501,601 - Flachowsky , et al. August 6, 2	2013-08-06
Methods For Fabricating Integrated Circuits Using Non-oxidizing Resist Removal App 20130029464 - Flachowsky; Stefan ; et al.	2013-01-31
Drive Current Increase in Field Effect Transistors by Asymmetric Concentration Profile of Alloy Species of a Channel Semiconductor Alloy App 20120193708 - Flachowsky; Stefan ; et al.	2012-08-02
Low-Diffusion Drain and Source Regions in CMOS Transistors for Low Power/High Performance Applications App 20120153399 - Hoentschel; Jan ; et al.	2012-06-21
Polysilicon Resistors Formed in a Semiconductor Device Comprising High-K Metal Gate Electrode Structures App 20120049291 - Scheiper; Thilo ; et al.	2012-03-01
Reduced Threshold Voltage-Width Dependency in Transistors Comprising High-K Metal Gate Electrode Structures App 20120049293 - SCHEIPER; Thilo ; et al.	2012-03-01

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.