Lang; Teemu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lang; Teemu.The latest application filed is for "semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrate".

Company Profile

0.8.14

Lang; Teemu - Helsinki FI

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Substrate, Semiconductor Device And Method Of Manufacturing A Semiconductor Substrate App 20120064700 - Odnoblyudov; Maxim ; et al.	2012-03-15
Transition metal alloys for use as a gate electrode and devices incorporating these alloys App 20110097858 - Doczy; Mark ; et al.	2011-04-28
Semiconductor Substrate, Semiconductor Device and Method of Manufacturing a Semiconductor Substrate App 20080308841 - Odnoblyudov; Maxim ; et al.	2008-12-18
Precursor Material Delivery System With Staging Volume For Atomic Layer Deposition App 20070117383 - Aitchison; Bradley J. ; et al.	2007-05-24
Transition metal alloys for use a gate electrode and device incorporating these alloys App 20070096163 - Doczy; Mark ; et al.	2007-05-03
Precursor Material Delivery System With Thermal Enhancements For Atomic Layer Deposition App 20070089674 - Aitchison; Bradley J. ; et al.	2007-04-26
Deposition of carbon- and transition metal-containing thin films Grant 7,198,820 - Harkonen , et al. April 3, 2	2007-04-03
Transition metal alloys for use as a gate electrode and devices incorporating these alloys Grant 7,193,253 - Doczy , et al. March 20, 2	2007-03-20
Diaphragm valve for atomic layer deposition Grant 7,191,793 - Maula , et al. March 20, 2	2007-03-20
Precursor material delivery system for atomic layer deposition Grant 7,141,095 - Aitchison , et al. November 28, 2	2006-11-28
Diaphragm Valve For Atomic Layer Deposition App 20060174945 - Maula; Jarmo Ilmari ; et al.	2006-08-10
Transition metal alloys for use as a gate electrode and devices incorporating these alloys Grant 7,030,430 - Doczy , et al. April 18, 2	2006-04-18
Diaphragm valve with reliability enhancements for atomic layer deposition Grant 7,021,330 - Maula , et al. April 4, 2	2006-04-04
Transition metal alloys for use as a gate electrode and devices incorporating these alloys App 20050280050 - Doczy, Mark ; et al.	2005-12-22
High-speed diaphragm valve for atomic layer deposition Grant 6,941,963 - Maula , et al. September 13, 2	2005-09-13
Diaphragm valve for high-temperature precursor supply in atomic layer deposition Grant 6,907,897 - Maula , et al. June 21, 2	2005-06-21
Transition metal alloys for use as a gate electrode and devices incorporating these alloys App 20050037557 - Doczy, Mark ; et al.	2005-02-17
High-speed diaphragm valve for atomic layer deposition App 20050011555 - Maula, Jarmo Ilmari ; et al.	2005-01-20
Diaphragm valve with reliability enhancements for atomic layer deposition App 20040262562 - Maula, Jarmo Ilmari ; et al.	2004-12-30
Diaphragm valve for high-temperature precursor supply in atomic layer deposition App 20040261850 - Maula, Jarmo Ilmari ; et al.	2004-12-30
Deposition of carbon-and transition metal-containing thin films App 20040208994 - Harkonen, Kari ; et al.	2004-10-21
Precursor material delivery system for atomic layer deposition App 20040124131 - Aitchison, Bradley J. ; et al.	2004-07-01

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