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name:-0.0070719718933105
name:-0.015052080154419
name:-0.00080513954162598
Landini; Barbara E. Patent Filings

Landini; Barbara E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Landini; Barbara E..The latest application filed is for "breath delivery system and method".

Company Profile
3.6.7
  • Landini; Barbara E. - Mesa AZ
  • Landini; Barbara E. - North Attleboro MA
  • Landini; Barbara E. - New Milford CT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Breath Delivery System And Method
App 20190328279 - Landini; Barbara E. ;   et al.
2019-10-31
Breath delivery system and method
Grant 10,188,318 - Landini , et al. Ja
2019-01-29
III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates
Grant 8,212,259 - Flynn , et al. July 3, 2
2012-07-03
Breath Delivery System and Method
App 20120071737 - Landini; Barbara E. ;   et al.
2012-03-22
Breath Delivery System and Method
App 20090196796 - Landini; Barbara E. ;   et al.
2009-08-06
Biosensor system with a multifunctional portable electronic device
App 20090054799 - Vrtis; Joan K. ;   et al.
2009-02-26
Method of preparing indium phosphide heterojunction bipolar transistors
Grant 6,800,879 - Welser , et al. October 5, 2
2004-10-05
III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same
App 20030213964 - Flynn, Jeffrey S. ;   et al.
2003-11-20
Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
Grant 6,641,938 - Landini , et al. November 4, 2
2003-11-04
Method of preparing indium phosphide heterojunction bipolar transistors
App 20020125498 - Welser, Roger E. ;   et al.
2002-09-12
Method For Achieving Improved Epitaxy Quality (surface Texture And Defect Density) On Free-standing (aluminum, Indium, Gallium) Nitride ((al,in,ga)n) Substrates For Opto-electronic And Electronic Devices
Grant 6,447,604 - Flynn , et al. September 10, 2
2002-09-10
Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
App 20020059898 - Landini, Barbara E. ;   et al.
2002-05-23

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