LAI; Yen-Hsin

Patent Applications and Registrations

Patent applications and USPTO patent grants for LAI; Yen-Hsin.The latest application filed is for "boot circuit, boot method, and boot system".

Company Profile

0.10.10

LAI; Yen-Hsin - Hsinchu TW
Lai; Yen-Hsin - Taipei TW
Lai; Yen-Hsin - Taipei City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Boot Circuit, Boot Method, And Boot System App 20210247986 - LAI; Yen-Hsin	2021-08-12
Non-volatile memory for high rewrite cycles application Grant 9,666,279 - Ching , et al. May 30, 2	2017-05-30
Single-poly nonvolatile memory cell Grant 9,640,259 - Li , et al. May 2, 2	2017-05-02
Non-volatile memory for high rewrite cycles application Grant 9,633,729 - Ching , et al. April 25, 2	2017-04-25
Non-volatile memory for high rewrite cycles application App 20160307629 - Ching; Wen-Hao ; et al.	2016-10-20
Non-volatile memory for high rewrite cycles application Grant 9,425,204 - Ching , et al. August 23, 2	2016-08-23
Single-poly Nonvolatile Memory Cell App 20160079251 - Li; Yi-Hung ; et al.	2016-03-17
Non-volatile memory for high rewrite cycles application App 20160035421 - Ching; Wen-Hao ; et al.	2016-02-04
Nonvolatile memory structure and fabrication method thereof Grant 9,236,453 - Li , et al. January 12, 2	2016-01-12
Nonvolatile Memory Structure And Fabrication Method Thereof App 20150091073 - Li; Yi-Hung ; et al.	2015-04-02
Non-volatile memory for high rewrite cycles application App 20150092498 - Ching; Wen-Hao ; et al.	2015-04-02
Non-volatile memory unit cell with improved sensing margin and reliability Grant 8,456,916 - Chen , et al. June 4, 2	2013-06-04
Non-volatile Memory Unit Cell With Improved Sensing Margin And Reliability App 20130119453 - Chen; Hsin-Ming ; et al.	2013-05-16
Non-volatile memory unit cell with improved sensing margin and reliability Grant 8,363,475 - Chen , et al. January 29, 2	2013-01-29
Non-volatile Memory Unit Cell With Improved Sensing Margin And Reliability App 20120273860 - Chen; Hsin-Ming ; et al.	2012-11-01
Single polysilicon layer non-volatile memory and operating method thereof Grant 8,199,578 - Chen , et al. June 12, 2	2012-06-12
Single-polysilicon Layer Non-volatile Memory And Operating Method Thereof App 20110299336 - Chen; Hsin-Ming ; et al.	2011-12-08
Non-volatile Memory Unit Cell With Improved Sensing Margin And Reliability App 20110242893 - Chen; Hsin-Ming ; et al.	2011-10-06

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