loadpatents
name:-0.018498182296753
name:-0.0079319477081299
name:-0.0051729679107666
LAI; TE-YANG Patent Filings

LAI; TE-YANG

Patent Applications and Registrations

Patent applications and USPTO patent grants for LAI; TE-YANG.The latest application filed is for "semiconductor device and manufacturing method for the semiconductor device".

Company Profile
6.7.17
  • LAI; TE-YANG - HSINCHU TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Device And Manufacturing Method For The Semiconductor Device
App 20220223712 - PENG; CHUN-YEN ;   et al.
2022-07-14
Semiconductor Structure And Manufacturing Method For The Semiconductor Structure
App 20220181495 - PENG; CHUN-YEN ;   et al.
2022-06-09
Negative-capacitance And Ferroelectric Field-effect Transistor (ncfet And Fe-fet) Devices
App 20220149182 - Lai; Te-Yang ;   et al.
2022-05-12
Semiconductor device and manufacturing method for the semiconductor device
Grant 11,309,398 - Peng , et al. April 19, 2
2022-04-19
Nanostructure Field-Effect Transistor Device and Method of Forming
App 20220084889 - Lai; Te-Yang ;   et al.
2022-03-17
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
Grant 11,264,489 - Lai , et al. March 1, 2
2022-03-01
Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCFET and FE-FET) Devices
App 20220059671 - Lai; Te-Yang ;   et al.
2022-02-24
Semiconductor structure and manufacturing method for the semiconductor structure
Grant 11,257,950 - Peng , et al. February 22, 2
2022-02-22
Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering
App 20210399104 - Chang; Chia-Yuan ;   et al.
2021-12-23
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
App 20210375629 - Lai; Te-Yang ;   et al.
2021-12-02
Semiconductor Device and Method of Manufacture
App 20210375690 - Peng; Chun-Yen ;   et al.
2021-12-02
Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices
Grant 11,171,219 - Lai , et al. November 9, 2
2021-11-09
Semiconductor Device And Manufacturing Method For The Semiconductor Device
App 20210313440 - PENG; CHUN-YEN ;   et al.
2021-10-07
Negative-capacitance And Ferroelectric Field-effect Transistor (ncfet And Fe-fet) Devices
App 20210296469 - Lai; Te-Yang ;   et al.
2021-09-23
Negative-capacitance And Ferroelectric Field-effect Transistor (ncfet And Fe-fet) Devices
App 20210296464 - Lai; Te-Yang ;   et al.
2021-09-23
Semiconductor Devices and Methods of Manufacture
App 20210280415 - Peng; Chun-Yen ;   et al.
2021-09-09
Semiconductor Structure And Manufacturing Method For The Semiconductor Structure
App 20210265507 - PENG; CHUN-YEN ;   et al.
2021-08-26
Semiconductor device and method of manufacture
Grant 11,101,180 - Peng , et al. August 24, 2
2021-08-24
Method of Gap Filling For Semiconductor Device
App 20210226038 - Lai; Te-Yang ;   et al.
2021-07-22
Semiconductor devices and methods of manufacture
Grant 11,011,372 - Peng , et al. May 18, 2
2021-05-18
Method of gap filling for semiconductor device
Grant 10,985,266 - Lai , et al. April 20, 2
2021-04-20
Method of Gap Filling for Semiconductor Device
App 20210057540 - Lai; Te-Yang ;   et al.
2021-02-25
Semiconductor Devices And Methods Of Manufacture
App 20210057216 - Peng; Chun-Yen ;   et al.
2021-02-25
Semiconductor Device And Method Of Manufacture
App 20210057224 - Peng; Chun-Yen ;   et al.
2021-02-25

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed