loadpatents
Patent applications and USPTO patent grants for Lai; Li-Shyue.The latest application filed is for "integrated circuits with gate stacks".
Patent | Date |
---|---|
Integrated circuits with gate stacks Grant 10,861,958 - Cheng , et al. December 8, 2 | 2020-12-08 |
Integrated Circuits with Gate Stacks App 20190259862 - Cheng; Kuan-Lun ;   et al. | 2019-08-22 |
Integrated circuits with gate stacks Grant 10,283,623 - Cheng , et al. | 2019-05-07 |
Integrated Circuits with Gate Stacks App 20190035917 - Cheng; Kuan-Lun ;   et al. | 2019-01-31 |
Metal gate finFET device Grant 9,461,041 - Yang , et al. October 4, 2 | 2016-10-04 |
Metal Gate Finfet Device App 20150115372 - Yang; Yu-Lin ;   et al. | 2015-04-30 |
Metal gate finFET device and method of fabricating thereof Grant 8,921,218 - Yang , et al. December 30, 2 | 2014-12-30 |
Metal Gate Finfet Device And Method Of Fabricating Thereof App 20130307088 - Yang; Yu-Lin ;   et al. | 2013-11-21 |
Multi-level flash memory cell capable of fast programming Grant 8,466,505 - Lai , et al. June 18, 2 | 2013-06-18 |
Multiple-gate transistors with reverse T-shaped fins Grant 8,455,321 - Lai , et al. June 4, 2 | 2013-06-04 |
Phase change memory device and method of manufacture thereof Grant 8,263,959 - Wang , et al. September 11, 2 | 2012-09-11 |
Finfets and methods for forming the same Grant 8,264,021 - Lai , et al. September 11, 2 | 2012-09-11 |
Method for forming a reduced active area in a phase change memory structure Grant 8,153,471 - Lai , et al. April 10, 2 | 2012-04-10 |
Multiple-Gate Transistors with Reverse T-Shaped Fins App 20120058628 - Lai; Li-Shyue ;   et al. | 2012-03-08 |
Multiple-gate transistors with reverse T-shaped fins Grant 8,058,692 - Lai , et al. November 15, 2 | 2011-11-15 |
Phase change memory devices with reduced programming current Grant 8,022,382 - Lai , et al. September 20, 2 | 2011-09-20 |
Finfets And Methods For Forming The Same App 20110079829 - LAI; Li-Shyue ;   et al. | 2011-04-07 |
Method For Forming A Reduced Active Area In A Phase Change Memory Structure App 20110059590 - Lai; Li-Shyue ;   et al. | 2011-03-10 |
Reduced active area in a phase change memory structure Grant 7,858,980 - Lai , et al. December 28, 2 | 2010-12-28 |
Multiple-Gate Transistors with Reverse T-Shaped Fins App 20100163842 - Lai; Li-Shyue ;   et al. | 2010-07-01 |
MRAM arrays and methods for writing and reading magnetic memory devices Grant 7,436,698 - Lin , et al. October 14, 2 | 2008-10-14 |
Phase Change Memory Device and Method of Manufacture Thereof App 20070205406 - Wang; Chao-Hsiung ;   et al. | 2007-09-06 |
Phase change memory device and method of manufacturing Grant 7,265,373 - Wang , et al. September 4, 2 | 2007-09-04 |
Phase change memory device and method of manufacture thereof Grant 7,229,883 - Wang , et al. June 12, 2 | 2007-06-12 |
MRAM arrays and methods for writing and reading magnetic memory devices App 20070091672 - Lin; Wen-Chin ;   et al. | 2007-04-26 |
Segmented MRAM memory array Grant 7,203,129 - Lin , et al. April 10, 2 | 2007-04-10 |
Phase change memory devices with reduced programming current App 20070075347 - Lai; Li-Shyue ;   et al. | 2007-04-05 |
MRAM cell with reduced write current Grant 7,170,775 - Lin , et al. January 30, 2 | 2007-01-30 |
MRAM arrays and methods for writing and reading magnetic memory devices Grant 7,154,798 - Lin , et al. December 26, 2 | 2006-12-26 |
System and method for passing high energy particles through a mask Grant 7,151,271 - Wang , et al. December 19, 2 | 2006-12-19 |
Write line design in MRAM App 20060278908 - Lin; Wen Chin ;   et al. | 2006-12-14 |
Multi-level flash memory cell capable of fast programming App 20060202254 - Lai; Li-Shyue ;   et al. | 2006-09-14 |
Write line design in MRAM Grant 7,105,879 - Lin , et al. September 12, 2 | 2006-09-12 |
Non-orthogonal write line structure in MRAM Grant 7,099,176 - Lin , et al. August 29, 2 | 2006-08-29 |
Phase change memory device and method of manufacture thereof App 20060186440 - Wang; Chao-Hsiung ;   et al. | 2006-08-24 |
Phase change memory device and method of manufacturing App 20060148229 - Wang; Chao-Hsiung ;   et al. | 2006-07-06 |
MRAM cell with reduced write current App 20060146602 - Lin; Wen Chin ;   et al. | 2006-07-06 |
System and method for passing particles on selected areas on a wafer Grant 7,071,478 - Lin , et al. July 4, 2 | 2006-07-04 |
Integrated capacitor Grant 7,050,290 - Tang , et al. May 23, 2 | 2006-05-23 |
Interdigitated capacitor and method for fabrication thereof Grant 7,035,083 - Lin , et al. April 25, 2 | 2006-04-25 |
MRAM arrays and methods for writing and reading magnetic memory devices App 20050243598 - Lin, Wen-Chin ;   et al. | 2005-11-03 |
Non-orthogonal write line structure in MRAM App 20050232005 - Lin, Wen Chin ;   et al. | 2005-10-20 |
Write line design in MRAM App 20050234659 - Lin, Wen Chin ;   et al. | 2005-10-20 |
System and method for passing particles on selected areas on a wafer App 20050218346 - Lin, Wen Chin ;   et al. | 2005-10-06 |
Interdigitated capacitor and method for fabrication therof App 20050206469 - Lin, Wen-Chin ;   et al. | 2005-09-22 |
Method for forming a reduced active area in a phase change memory structure App 20050191804 - Lai, Li-Shyue ;   et al. | 2005-09-01 |
Phase change memory cell and method of its manufacture App 20050184282 - Lai, Li-Shyue ;   et al. | 2005-08-25 |
Segmented MRAM memory array App 20050180203 - Lin, Wen-Chin ;   et al. | 2005-08-18 |
Integrated capacitor App 20050168914 - Tang, Denny ;   et al. | 2005-08-04 |
System and method for passing high energy particles through a mask App 20050077485 - Wang, Chao-Hsiung ;   et al. | 2005-04-14 |
Multiple width and/or thickness write line in MRAM Grant 6,873,535 - Lin , et al. March 29, 2 | 2005-03-29 |
Method of ultra thin base fabrication for Si/SiGe hetro bipolar transister App 20040087097 - Lai, Li-Shyue ;   et al. | 2004-05-06 |
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