loadpatents
name:-0.029031038284302
name:-0.025566101074219
name:-0.0041041374206543
Lai; Li-Shyue Patent Filings

Lai; Li-Shyue

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lai; Li-Shyue.The latest application filed is for "integrated circuits with gate stacks".

Company Profile
4.28.28
  • Lai; Li-Shyue - Hsinchu County TW
  • Lai; Li-Shyue - Hsin-Chu TW
  • Lai; Li-Shyue - Jhube N/A TW
  • Lai; Li-Shyue - Jhube City TW
  • Lai; Li-Shyue - Jube TW
  • Lai; Li-Shyue - Jube City TW
  • Lai; Li-Shyue - Hsinchu TW
  • Lai; Li-Shyue - Jhubei TW
  • Lai, Li-Shyue - Jhubei City TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Integrated circuits with gate stacks
Grant 10,861,958 - Cheng , et al. December 8, 2
2020-12-08
Integrated Circuits with Gate Stacks
App 20190259862 - Cheng; Kuan-Lun ;   et al.
2019-08-22
Integrated circuits with gate stacks
Grant 10,283,623 - Cheng , et al.
2019-05-07
Integrated Circuits with Gate Stacks
App 20190035917 - Cheng; Kuan-Lun ;   et al.
2019-01-31
Metal gate finFET device
Grant 9,461,041 - Yang , et al. October 4, 2
2016-10-04
Metal Gate Finfet Device
App 20150115372 - Yang; Yu-Lin ;   et al.
2015-04-30
Metal gate finFET device and method of fabricating thereof
Grant 8,921,218 - Yang , et al. December 30, 2
2014-12-30
Metal Gate Finfet Device And Method Of Fabricating Thereof
App 20130307088 - Yang; Yu-Lin ;   et al.
2013-11-21
Multi-level flash memory cell capable of fast programming
Grant 8,466,505 - Lai , et al. June 18, 2
2013-06-18
Multiple-gate transistors with reverse T-shaped fins
Grant 8,455,321 - Lai , et al. June 4, 2
2013-06-04
Phase change memory device and method of manufacture thereof
Grant 8,263,959 - Wang , et al. September 11, 2
2012-09-11
Finfets and methods for forming the same
Grant 8,264,021 - Lai , et al. September 11, 2
2012-09-11
Method for forming a reduced active area in a phase change memory structure
Grant 8,153,471 - Lai , et al. April 10, 2
2012-04-10
Multiple-Gate Transistors with Reverse T-Shaped Fins
App 20120058628 - Lai; Li-Shyue ;   et al.
2012-03-08
Multiple-gate transistors with reverse T-shaped fins
Grant 8,058,692 - Lai , et al. November 15, 2
2011-11-15
Phase change memory devices with reduced programming current
Grant 8,022,382 - Lai , et al. September 20, 2
2011-09-20
Finfets And Methods For Forming The Same
App 20110079829 - LAI; Li-Shyue ;   et al.
2011-04-07
Method For Forming A Reduced Active Area In A Phase Change Memory Structure
App 20110059590 - Lai; Li-Shyue ;   et al.
2011-03-10
Reduced active area in a phase change memory structure
Grant 7,858,980 - Lai , et al. December 28, 2
2010-12-28
Multiple-Gate Transistors with Reverse T-Shaped Fins
App 20100163842 - Lai; Li-Shyue ;   et al.
2010-07-01
MRAM arrays and methods for writing and reading magnetic memory devices
Grant 7,436,698 - Lin , et al. October 14, 2
2008-10-14
Phase Change Memory Device and Method of Manufacture Thereof
App 20070205406 - Wang; Chao-Hsiung ;   et al.
2007-09-06
Phase change memory device and method of manufacturing
Grant 7,265,373 - Wang , et al. September 4, 2
2007-09-04
Phase change memory device and method of manufacture thereof
Grant 7,229,883 - Wang , et al. June 12, 2
2007-06-12
MRAM arrays and methods for writing and reading magnetic memory devices
App 20070091672 - Lin; Wen-Chin ;   et al.
2007-04-26
Segmented MRAM memory array
Grant 7,203,129 - Lin , et al. April 10, 2
2007-04-10
Phase change memory devices with reduced programming current
App 20070075347 - Lai; Li-Shyue ;   et al.
2007-04-05
MRAM cell with reduced write current
Grant 7,170,775 - Lin , et al. January 30, 2
2007-01-30
MRAM arrays and methods for writing and reading magnetic memory devices
Grant 7,154,798 - Lin , et al. December 26, 2
2006-12-26
System and method for passing high energy particles through a mask
Grant 7,151,271 - Wang , et al. December 19, 2
2006-12-19
Write line design in MRAM
App 20060278908 - Lin; Wen Chin ;   et al.
2006-12-14
Multi-level flash memory cell capable of fast programming
App 20060202254 - Lai; Li-Shyue ;   et al.
2006-09-14
Write line design in MRAM
Grant 7,105,879 - Lin , et al. September 12, 2
2006-09-12
Non-orthogonal write line structure in MRAM
Grant 7,099,176 - Lin , et al. August 29, 2
2006-08-29
Phase change memory device and method of manufacture thereof
App 20060186440 - Wang; Chao-Hsiung ;   et al.
2006-08-24
Phase change memory device and method of manufacturing
App 20060148229 - Wang; Chao-Hsiung ;   et al.
2006-07-06
MRAM cell with reduced write current
App 20060146602 - Lin; Wen Chin ;   et al.
2006-07-06
System and method for passing particles on selected areas on a wafer
Grant 7,071,478 - Lin , et al. July 4, 2
2006-07-04
Integrated capacitor
Grant 7,050,290 - Tang , et al. May 23, 2
2006-05-23
Interdigitated capacitor and method for fabrication thereof
Grant 7,035,083 - Lin , et al. April 25, 2
2006-04-25
MRAM arrays and methods for writing and reading magnetic memory devices
App 20050243598 - Lin, Wen-Chin ;   et al.
2005-11-03
Non-orthogonal write line structure in MRAM
App 20050232005 - Lin, Wen Chin ;   et al.
2005-10-20
Write line design in MRAM
App 20050234659 - Lin, Wen Chin ;   et al.
2005-10-20
System and method for passing particles on selected areas on a wafer
App 20050218346 - Lin, Wen Chin ;   et al.
2005-10-06
Interdigitated capacitor and method for fabrication therof
App 20050206469 - Lin, Wen-Chin ;   et al.
2005-09-22
Method for forming a reduced active area in a phase change memory structure
App 20050191804 - Lai, Li-Shyue ;   et al.
2005-09-01
Phase change memory cell and method of its manufacture
App 20050184282 - Lai, Li-Shyue ;   et al.
2005-08-25
Segmented MRAM memory array
App 20050180203 - Lin, Wen-Chin ;   et al.
2005-08-18
Integrated capacitor
App 20050168914 - Tang, Denny ;   et al.
2005-08-04
System and method for passing high energy particles through a mask
App 20050077485 - Wang, Chao-Hsiung ;   et al.
2005-04-14
Multiple width and/or thickness write line in MRAM
Grant 6,873,535 - Lin , et al. March 29, 2
2005-03-29
Method of ultra thin base fabrication for Si/SiGe hetro bipolar transister
App 20040087097 - Lai, Li-Shyue ;   et al.
2004-05-06

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