loadpatents
name:-0.028995037078857
name:-0.022274017333984
name:-0.027854919433594
Lai; Bo-Yu Patent Filings

Lai; Bo-Yu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lai; Bo-Yu.The latest application filed is for "conductive feature of semiconductor device and method of forming same".

Company Profile
26.18.23
  • Lai; Bo-Yu - Taipei TW
  • Lai; Bo-Yu - Taipei City TW
  • Lai; Bo-Yu - Hsin-Chu TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Air gap formation between gate spacer and epitaxy structure
Grant 11,456,295 - Lai , et al. September 27, 2
2022-09-27
Conductive Feature Of Semiconductor Device And Method Of Forming Same
App 20220277994 - Lai; Bo-Yu ;   et al.
2022-09-01
Transistors with Recessed Silicon Cap and Method Forming Same
App 20220223591 - Chen; Yen-Ting ;   et al.
2022-07-14
Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
App 20220122893 - Lai; Bo-Yu ;   et al.
2022-04-21
Transistors with recessed silicon cap and method forming same
Grant 11,296,077 - Chen , et al. April 5, 2
2022-04-05
Self-aligned gate hard mask and method forming same
Grant 11,205,724 - Lee , et al. December 21, 2
2021-12-21
Forming transistor by selectively growing gate spacer
Grant 11,133,229 - Lee , et al. September 28, 2
2021-09-28
Self-Aligned Contact Air Gap Formation
App 20210183996 - Lee; Kai-Hsuan ;   et al.
2021-06-17
Conformal Transfer Doping Method for Fin-Like Field Effect Transistor
App 20210134985 - Yeong; Sai-Hooi ;   et al.
2021-05-06
Air Gap Formation Between Gate Spacer And Epitaxy Structure
App 20210118749 - LAI; Bo-Yu ;   et al.
2021-04-22
Low-K Gate Spacer and Methods for Forming the Same
App 20210057546 - Lin; Wen-Kai ;   et al.
2021-02-25
Self-aligned contact air gap formation
Grant 10,923,565 - Lee , et al. February 16, 2
2021-02-16
Fin Field Effect Transistor (finfet) Device Structure
App 20210043751 - YEONG; Sai-Hooi ;   et al.
2021-02-11
Conformal transfer doping method for fin-like field effect transistor
Grant 10,868,151 - Yeong , et al. December 15, 2
2020-12-15
Air gap formation between gate spacer and epitaxy structure
Grant 10,861,753 - Lai , et al. December 8, 2
2020-12-08
Fin field effect transistor (finFET) device structure and method for forming the same
Grant 10,833,167 - Yeong , et al. November 10, 2
2020-11-10
Low-k gate spacer and methods for forming the same
Grant 10,833,170 - Lin , et al. November 10, 2
2020-11-10
Self-Aligned Gate Hard Mask and Method Forming Same
App 20200287042 - Lee; Kai-Hsuan ;   et al.
2020-09-10
Self-aligned gate hard mask and method forming same
Grant 10,686,075 - Lee , et al.
2020-06-16
Transistors with Recessed Silicon Cap and Method Forming Same
App 20200161297 - Chen; Yen-Ting ;   et al.
2020-05-21
Forming Transistor by Selectively Growing Gate Spacer
App 20200152522 - Lee; Kai-Hsuan ;   et al.
2020-05-14
Air Gap Formation Between Gate Spacer And Epitaxy Structure
App 20200135590 - LAI; Bo-Yu ;   et al.
2020-04-30
Fin Field Effect Transistor (finfet) Device Structure And Method For Forming The Same
App 20200135883 - YEONG; Sai-Hooi ;   et al.
2020-04-30
Self-Aligned Contact Air Gap Formation
App 20200105867 - Lee; Kai-Hsuan ;   et al.
2020-04-02
Low-K Gate Spacer and Methods for Forming the Same
App 20200035809 - Lin; Wen-Kai ;   et al.
2020-01-30
Forming transistor by selectively growing gate spacer
Grant 10,535,569 - Lee , et al. Ja
2020-01-14
Low-k gate spacer and methods for forming the same
Grant 10,490,650 - Lin , et al. Nov
2019-11-26
Conformal Transfer Doping Method For Fin-Like Field Effect Transistor
App 20190252527 - Yeong; Sai-Hooi ;   et al.
2019-08-15
Semiconductor Structure And Method For Forming The Same
App 20190148519 - LEE; Kai-Hsuan ;   et al.
2019-05-16
Low-k Gate Spacer And Methods For Forming The Same
App 20190148514 - Lin; Wen-Kai ;   et al.
2019-05-16
Semiconductor structure and method for forming the same
Grant 10,283,624 - Lee , et al.
2019-05-07
Conformal transfer doping method for fin-like field effect transistor
Grant 10,276,691 - Yeong , et al.
2019-04-30
Self-Aligned Gate Hard Mask and Method Forming Same
App 20190013400 - Lee; Kai-Hsuan ;   et al.
2019-01-10
Forming Transistor by Selectively Growing Gate Spacer
App 20180337100 - Lee; Kai-Hsuan ;   et al.
2018-11-22
Self-aligned gate hard mask and method forming same
Grant 10,062,784 - Lee , et al. August 28, 2
2018-08-28
Forming transistor by selectively growing gate spacer
Grant 10,037,923 - Lee , et al. July 31, 2
2018-07-31
Conformal Transfer Doping Method For Fin-Like Field Effect Transistor
App 20180175175 - Yeong; Sai-Hooi ;   et al.
2018-06-21
Structure of fin feature and method of making same
Grant 9,847,329 - Wen , et al. December 19, 2
2017-12-19
Semiconductor structure with fin structure and wire structure and method for forming the same
Grant 9,450,046 - Wen , et al. September 20, 2
2016-09-20
Semiconductor Structure With Fin Structure And Wire Structure And Method For Forming The Same
App 20160204195 - WEN; Tsung-Yao ;   et al.
2016-07-14
Structure of Fin Feature and Method of Making Same
App 20160071846 - Wen; Tsung-Yao ;   et al.
2016-03-10

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed