| Patent | Date |
|---|
Semiconductor device
Grant 11,296,218 - Siemieniec , et al. April 5, 2 | 2022-04-05 |
Needle cell trench MOSFET
Grant 11,251,275 - Altstaetter , et al. February 15, 2 | 2022-02-15 |
Mosfet Having A Drift Region With A Graded Doping Profile And Methods Of Manufacturing Thereof
App 20220013665 - Siemieniec; Ralf ; et al. | 2022-01-13 |
Semiconductor Device And Method Of Manufacturing The Same
App 20210367045 - Laforet; David ; et al. | 2021-11-25 |
Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof
Grant 11,158,735 - Siemieniec , et al. October 26, 2 | 2021-10-26 |
Transistor Device And Method Of Fabricating A Gate Of A Transistor Device
App 20210249534 - Neumann; Ingmar ; et al. | 2021-08-12 |
Charge Compensation MOSFET with Graded Epi Profile and Methods of Manufacturing Thereof
App 20210242340 - Siemieniec; Ralf ; et al. | 2021-08-05 |
Semiconductor Device Having A Transistor Cell Region And A Termination Region With Needle-shaped Field Plate Structures
App 20210066459 - Siemieniec; Ralf ; et al. | 2021-03-04 |
Semiconductor device with needle-shaped field plate structures
Grant 10,872,957 - Siemieniec , et al. December 22, 2 | 2020-12-22 |
Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof
Grant 10,868,173 - Ouvrard , et al. December 15, 2 | 2020-12-15 |
Semiconductor Device
App 20200365724 - Siemieniec; Ralf ; et al. | 2020-11-19 |
Transistor device with gate resistor
Grant 10,811,531 - Laforet , et al. October 20, 2 | 2020-10-20 |
Semiconductor Device Having An Edge Termination Area With Trench Electrodes At Different Electric Potentials, And Method For Manufacturing Thereof
App 20200328303 - Ouvrard; Cedric ; et al. | 2020-10-15 |
Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof
Grant 10,727,331 - Ouvrard , et al. | 2020-07-28 |
Semiconductor Device with Needle-Shaped Field Plate Structures
App 20200127102 - Siemieniec; Ralf ; et al. | 2020-04-23 |
Power semiconductor device having different gate crossings, and method for manufacturing thereof
Grant 10,629,595 - Ouvrard , et al. | 2020-04-21 |
Semiconductor transistor and method for forming the semiconductor transistor
Grant 10,573,731 - Yip , et al. Feb | 2020-02-25 |
Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer
Grant 10,566,426 - Mauder , et al. Feb | 2020-02-18 |
Needle Cell Trench MOSFET
App 20200052077 - Altstaetter; Christof ; et al. | 2020-02-13 |
Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
Grant 10,510,846 - Siemieniec , et al. Dec | 2019-12-17 |
Methods of manufacturing a power MOSFET
Grant 10,453,929 - Laforet , et al. Oc | 2019-10-22 |
Transistor Device with Gate Resistor
App 20190267487 - Laforet; David ; et al. | 2019-08-29 |
Semiconductor device having a trench gate
Grant 10,269,953 - Laforet , et al. | 2019-04-23 |
Reduced gate charge field-effect transistor
Grant 10,205,015 - Laforet , et al. Feb | 2019-02-12 |
Semiconductor Device Having a Reduced Surface Doping in an Edge Termination Area, and Method for Manufacturing Thereof
App 20190006513 - Ouvrard; Cedric ; et al. | 2019-01-03 |
Power Semiconductor Device Having Different Gate Crossings, and Method for Manufacturing Thereof
App 20190006357 - Ouvrard; Cedric ; et al. | 2019-01-03 |
Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
Grant 10,050,113 - Siemieniec , et al. August 14, 2 | 2018-08-14 |
Forming Silicon Oxide Layers By Radical Oxidation And Semiconductor Device With Silicon Oxide Layer
App 20180175150 - MAUDER; Anton ; et al. | 2018-06-21 |
Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures
Grant 9,972,714 - LaForet , et al. May 15, 2 | 2018-05-15 |
Semiconductor Device Having a Trench Gate
App 20180122934 - Laforet; David ; et al. | 2018-05-03 |
Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer
Grant 9,865,726 - Laforet , et al. January 9, 2 | 2018-01-09 |
Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode
Grant 9,847,395 - Laforet , et al. December 19, 2 | 2017-12-19 |
Reduced Gate Charge Field-Effect Transistor
App 20170345924 - Laforet; David ; et al. | 2017-11-30 |
Semiconductor device with field electrode and contact structure
Grant 9,799,738 - Siemieniec , et al. October 24, 2 | 2017-10-24 |
Semiconductor Transistor and Method for Forming the Semiconductor Transistor
App 20170271491 - Yip; Li Juin ; et al. | 2017-09-21 |
Reduced gate charge field-effect transistor
Grant 9,755,066 - Laforet , et al. September 5, 2 | 2017-09-05 |
Semiconductor Device with Needle-Shaped Field Plate Structures in a Transistor Cell Region and in an Inner Termination Region
App 20170250255 - Siemieniec; Ralf ; et al. | 2017-08-31 |
Semiconductor Device with Needle-Shaped Field Plates and a Gate Structure with Edge and Node Portions
App 20170250256 - Siemieniec; Ralf ; et al. | 2017-08-31 |
Methods of Manufacturing a Power MOSFET
App 20170236910 - Laforet; David ; et al. | 2017-08-17 |
Semiconductor device comprising a field electrode
Grant 9,728,614 - Laforet , et al. August 8, 2 | 2017-08-08 |
Power MOSFET with seperate gate and field plate trenches
Grant 9,680,004 - Laforet , et al. June 13, 2 | 2017-06-13 |
Reduced Gate Charge Field-Effect Transistor
App 20170154993 - Laforet; David ; et al. | 2017-06-01 |
Method of Manufacturing a Semiconductor Device with Trench Gate by Using a Screen Oxide Layer
App 20170110573 - Laforet; David ; et al. | 2017-04-20 |
Semiconductor Device Comprising a Field Electrode
App 20170104078 - Laforet; David ; et al. | 2017-04-13 |
Reducing switching losses associated with a synchronous rectification MOSFET
Grant 9,621,058 - Braz , et al. April 11, 2 | 2017-04-11 |
Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
App 20170077227 - Laforet; David ; et al. | 2017-03-16 |
Semiconductor Device Including a Contact Structure Directly Adjoining a Mesa Section and a Field Electrode
App 20170005171 - Laforet; David ; et al. | 2017-01-05 |
Semiconductor device comprising a field electrode
Grant 9,536,960 - Laforet , et al. January 3, 2 | 2017-01-03 |
Semiconductor Device with Gate Fins
App 20160293751 - Siemieniec; Ralf ; et al. | 2016-10-06 |
Reducing Switching Losses Associated With A Synchronous Rectification Mosfet
App 20160211757 - Braz; Cesar Augusto ; et al. | 2016-07-21 |
Method of manufacturing a gate trench with thick bottom oxide
Grant 9,287,376 - Laforet , et al. March 15, 2 | 2016-03-15 |
Semiconductor Device with Field Electrode and Contact Structure
App 20160064496 - Siemieniec; Ralf ; et al. | 2016-03-03 |
Semiconductor Device with a Termination Mesa Between a Termination Structure and a Cell Field of Field Electrode Structures
App 20160064548 - Laforet; David ; et al. | 2016-03-03 |
Power MOSFET and Method of Manufacturing a Power MOSFET
App 20160020319 - Laforet; David ; et al. | 2016-01-21 |
Semiconductor Device Comprising a Field Electrode
App 20160013280 - Laforet; David ; et al. | 2016-01-14 |
Semiconductor device, junction field effect transistor and vertical field effect transistor
Grant 9,029,974 - Esteve , et al. May 12, 2 | 2015-05-12 |
Semiconductor Device, Junction Field Effect Transistor And Vertical Field Effect Transistor
App 20150069411 - Esteve; Romain ; et al. | 2015-03-12 |
Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor
Grant 8,558,308 - Blank , et al. October 15, 2 | 2013-10-15 |
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