Lacey; Dianne L.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lacey; Dianne L..The latest application filed is for "tic as a thermally stable p-metal carbide on high k sio2 gate stacks".

Company Profile

0.10.12

Lacey; Dianne L. - Mahopac NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
TiC as a thermally stable p-metal carbide on high k SiO.sub.2 gate stacks Grant 8,288,237 - Callegari , et al. October 16, 2	2012-10-16
Method of forming metal/high-.kappa. gate stacks with high mobility Grant 8,153,514 - Andreoni , et al. April 10, 2	2012-04-10
TiC as a thermally stable p-metal carbide on high k SiO.sub.2 gate stacks Grant 7,667,277 - Callegari , et al. February 23, 2	2010-02-23
TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS App 20100015790 - Callegari; Alessandro C. ; et al.	2010-01-21
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures Grant 7,566,938 - Cabral, Jr. , et al. July 28, 2	2009-07-28
Method of forming HfSiN metal for n-FET applications Grant 7,521,346 - Callegari , et al. April 21, 2	2009-04-21
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY App 20080293259 - Andreoni; Wanda ; et al.	2008-11-27
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS App 20080245658 - Callegari; Alessandro C. ; et al.	2008-10-09
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS App 20080038905 - Callegari; Alessandro C. ; et al.	2008-02-14
Method of forming metal/high-k gate stacks with high mobility App 20060289903 - Andreoni; Wanda ; et al.	2006-12-28
Method of forming metal/high-k gate stacks with high mobility Grant 7,115,959 - Andreoni , et al. October 3, 2	2006-10-03
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks App 20060163630 - Callegari; Alessandro C. ; et al.	2006-07-27
Method of forming HfSiN metal for n-FET applications App 20060151846 - Callegari; Alessandro C. ; et al.	2006-07-13
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures App 20060138603 - Cabral; Cyril JR. ; et al.	2006-06-29
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures Grant 6,982,230 - Cabral, Jr. , et al. January 3, 2	2006-01-03
Method of forming metal/high-k gate stacks with high mobility App 20050280105 - Andreoni, Wanda ; et al.	2005-12-22
Germanate gate dielectrics for semiconductor devices App 20050082624 - Gousev, Evgeni ; et al.	2005-04-21
Guides lithographically fabricated on semiconductor devices Grant 6,798,953 - Cohen , et al. September 28, 2	2004-09-28
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures App 20040092073 - Cabral, Cyril JR. ; et al.	2004-05-13
Thermally stable poly-Si/high dielectric constant material interfaces Grant 6,573,197 - Callegari , et al. June 3, 2	2003-06-03
Thermally stable poly-Si/high dielectric constant material interfaces App 20020151142 - Callegari, Alessandro C. ; et al.	2002-10-17
Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface Grant 4,859,253 - Buchanan , et al. August 22, 1	1989-08-22

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