Kwok; Tsz-Mei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kwok; Tsz-Mei.The latest application filed is for "semiconductor device having epitaxy source/drain regions".

Company Profile

26.83.85

Kwok; Tsz-Mei - Hsinchu TW
KWOK; Tsz-Mei - Hsinchu City TW
Kwok; Tsz-Mei - Hsin-Chu TW
- Hsinchu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Source and drain stressors with recessed top surfaces Grant 11,437,515 - Li , et al. September 6, 2	2022-09-06
MOS devices having epitaxy regions with reduced facets Grant 11,411,109 - Sung , et al. August 9, 2	2022-08-09
Devices with strained source/drain structures and method of forming the same Grant 11,411,098 - Kwok , et al. August 9, 2	2022-08-09
Semiconductor Device Having Epitaxy Source/drain Regions App 20220181320 - LEE; Yi-Jing ; et al.	2022-06-09
Static random access memory cell and manufacturing method thereof Grant 11,355,500 - Lee , et al. June 7, 2	2022-06-07
Manufacturing method of integrated circuit Grant 11,276,692 - Lee , et al. March 15, 2	2022-03-15
Epitaxy Regions with Large Landing Areas for Contact Plugs App 20220028856 - Tai; Jung-Chi ; et al.	2022-01-27
Confined Source/drain Epitaxy Regions And Method Forming Same App 20210376073 - Yu; Jeng-Wei ; et al.	2021-12-02
Semiconductor Device Having Merged Epitaxial Features with Arc-Like Bottom Surface and Method of Making the Same App 20210313230 - Lee; Yi-Jing ; et al.	2021-10-07
Confined source/drain epitaxy regions and method forming same Grant 11,101,347 - Yu , et al. August 24, 2	2021-08-24
MOS Devices Having Epitaxy Regions with Reduced Facets App 20210184037 - Sung; Hsueh-Chang ; et al.	2021-06-17
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Grant 11,037,826 - Lee , et al. June 15, 2	2021-06-15
Structure and method for semiconductor device Grant 11,031,398 - Lee , et al. June 8, 2	2021-06-08
Doping Profile For Strained Source/drain Region App 20210119048 - Sung; Hsueh-Chang ; et al.	2021-04-22
Semiconductor Device And Manufacturing Method Thereof App 20210074710 - LEE; Yi-Jing ; et al.	2021-03-11
Semiconductor devices and methods for manufacturing the same Grant 10,943,790 - Tsai , et al. March 9, 2	2021-03-09
MOS devices having epitaxy regions with reduced facets Grant 10,916,656 - Sung , et al. February 9, 2	2021-02-09
Semiconductor Device And Manufacturing Method Thereof App 20210036154 - LI; Kun-Mu ; et al.	2021-02-04
Semiconductor device and method of forming same Grant 10,879,128 - Kwok , et al. December 29, 2	2020-12-29
Doping profile for strained source/drain region Grant 10,861,971 - Sung , et al. December 8, 2	2020-12-08
MOS Devices Having Epitaxy Regions with Reduced Facets App 20200357921 - Sung; Hsueh-Chang ; et al.	2020-11-12
Static Random Access Memory Cell And Manufacturing Method Thereof App 20200343250 - LEE; Yi-Jing ; et al.	2020-10-29
Source and Drain Stressors with Recessed Top Surfaces App 20200343381 - Li; Kun-Mu ; et al.	2020-10-29
MOS devices with non-uniform p-type impurity profile Grant 10,797,173 - Sung , et al. October 6, 2	2020-10-06
Semiconductor device and manufacturing method thereof Grant 10,749,029 - Li , et al. A	2020-08-18
MOS devices having epitaxy regions with reduced facets Grant 10,734,520 - Sung , et al.	2020-08-04
Structure and method for semiconductor device Grant 10,727,229 - Lee , et al.	2020-07-28
Source and drain stressors with recessed top surfaces Grant 10,727,342 - Li , et al.	2020-07-28
Semiconductor device and manufacturing method of a semiconductor device Grant 10,714,487 - Lee , et al.	2020-07-14
Confined Source/Drain Epitaxy Regions and Method Forming Same App 20200176560 - Yu; Jeng-Wei ; et al.	2020-06-04
Semiconductor Device Having Merged Epitaxial Features with Arc-Like Bottom Surface and Method of Making the Same App 20200161185 - Lee; Yi-Jing ; et al.	2020-05-21
Manufacturing Method Of Integrated Circuit App 20200119006 - LEE; Yi-Jing ; et al.	2020-04-16
Semiconductor Device and Method of Forming Same App 20200075423 - Kwok; Tsz-Mei ; et al.	2020-03-05
Structure and Method for Semiconductor Device App 20200075597 - Lee; Yi-Jing ; et al.	2020-03-05
Mos Devices Having Epitaxy Regions With Reduced Facets App 20200035831 - Sung; Hsueh-Chang ; et al.	2020-01-30
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Grant 10,546,784 - Lee , et al. Ja	2020-01-28
Integrated circuit and manufacturing method thereof Grant 10,510,753 - Lee , et al. Dec	2019-12-17
MOS devices having epitaxy regions with reduced facets Grant 10,475,926 - Sung , et al. Nov	2019-11-12
Semiconductor Devices and Methods for Manufacturing the Same App 20190252201 - Tsai; Chun Hsiung ; et al.	2019-08-15
Semiconductor Device And Manufacturing Method Of A Semiconductor Device App 20190131310 - LEE; Yi-Jing ; et al.	2019-05-02
Semiconductor Device And Manufacturing Method Thereof App 20190123201 - LI; Kun-Mu ; et al.	2019-04-25
Semiconductor devices and methods for manufacturing the same Grant 10,269,577 - Tsai , et al.	2019-04-23
MOS Devices with Non-Uniform P-type Impurity Profile App 20190115470A1 -	2019-04-18
Source And Drain Stressors With Recessed Top Surfaces App 20190035931 - Li; Kun-Mu ; et al.	2019-01-31
MOS Devices Having Epitaxy Regions with Reduced Facets App 20190013405 - Sung; Hsueh-Chang ; et al.	2019-01-10
Semiconductor device, static random access memory cell and manufacturing method of semiconductor device Grant 10,170,483 - Lee , et al. J	2019-01-01
Semiconductor device and manufacturing method thereof Grant 10,164,096 - Li , et al. Dec	2018-12-25
MOS devices with non-uniform p-type impurity profile Grant 10,158,016 - Sung , et al. Dec	2018-12-18
Semiconductor Device Having Merged Epitaxial Features with Arc-Like Bottom Surface and Method of Making the Same App 20180350687 - Lee; Yi-Jing ; et al.	2018-12-06
Source and drain stressors with recessed top surfaces Grant 10,084,089 - Li , et al. September 25, 2	2018-09-25
MOS devices having epitaxy regions with reduced facets Grant 10,062,781 - Sung , et al. August 28, 2	2018-08-28
Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same Grant 10,049,936 - Lee , et al. August 14, 2	2018-08-14
Devices With Strained Source/drain Structures And Method Of Forming The Same App 20180190788 - KWOK; Tsz-Mei ; et al.	2018-07-05
Modulating germanium percentage in MOS devices Grant 10,014,411 - Kwok , et al. July 3, 2	2018-07-03
Semiconductor Device Having Merged Epitaxial Features With Arc-like Bottom Surface And Method Of Making The Same App 20180174912 - Lee; Yi-Jing ; et al.	2018-06-21
Integrated Circuit And Manufacturing Method Thereof App 20180175031 - LEE; Yi-Jing ; et al.	2018-06-21
Transistor strain-inducing scheme Grant 9,991,364 - Kwok , et al. June 5, 2	2018-06-05
Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereof Grant 9,922,975 - Lee , et al. March 20, 2	2018-03-20
Structure and Method for Semiconductor Device App 20180076203 - Lee; Yi-Jing ; et al.	2018-03-15
MOS Devices Having Epitaxy Regions with Reduced Facets App 20180069123 - Sung; Hsueh-Chang ; et al.	2018-03-08
Devices with strained source/drain structures Grant 9,911,826 - Kwok , et al. March 6, 2	2018-03-06
V-shaped epitaxially formed semiconductor layer Grant 9,905,646 - Kwok , et al. February 27, 2	2018-02-27
Source and Drain Stressors with Recessed Top Surfaces App 20180012997 - Li; Kun-Mu ; et al.	2018-01-11
Semiconductor Device, Static Random Access Memory Cell And Manufacturing Method Of Semiconductor Device App 20180006039 - LEE; Yi-Jing ; et al.	2018-01-04
MOS devices having epitaxy regions with reduced facets Grant 9,853,155 - Li , et al. December 26, 2	2017-12-26
Semiconductor device and method of manufacturing the same Grant 9,847,225 - Cheng , et al. December 19, 2	2017-12-19
Methods for manufacturing devices with source/drain structures Grant 9,842,910 - Kwok , et al. December 12, 2	2017-12-12
Structure and method for semiconductor device Grant 9,825,036 - Lee , et al. November 21, 2	2017-11-21
Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration Grant 9,806,171 - Kwok , et al. October 31, 2	2017-10-31
Transistor Strain-inducing Scheme App 20170271478 - Kwok; Tsz-Mei ; et al.	2017-09-21
Semiconductor device, static random access memory cell and manufacturing method of semiconductor device Grant 9,768,178 - Lee , et al. September 19, 2	2017-09-19
MOS Devices Having Epitaxy Regions with Reduced Facets App 20170263771 - Li; Chii-Horng ; et al.	2017-09-14
Source and drain stressors with recessed top surfaces Grant 9,755,077 - Li , et al. September 5, 2	2017-09-05
Structure and Method for Semiconductor Device App 20170243868 - Lee; Yi-Jing ; et al.	2017-08-24
Doping Profile For Strained Source/drain Region App 20170243975 - Sung; Hsueh-Chang ; et al.	2017-08-24
V-Shaped Epitaxially Formed Semiconductor Layer App 20170194434 - KWOK; TSZ-MEI ; et al.	2017-07-06
Transistor strain-inducing scheme Grant 9,698,243 - Kwok , et al. July 4, 2	2017-07-04
Germanium profile for channel strain Grant 9,691,898 - Sung , et al. June 27, 2	2017-06-27
MOS Devices with Non-Uniform P-type Impurity Profile App 20170179287 - Sung; Hsueh-Chang ; et al.	2017-06-22
Source and Drain Stressors with Recessed Top Surfaces App 20170170319 - Li; Kun-Mu ; et al.	2017-06-15
MOS devices having epitaxy regions with reduced facets Grant 9,666,686 - Li , et al. May 30, 2	2017-05-30
Epitaxy profile engineering for FinFETs Grant 9,666,691 - Su , et al. May 30, 2	2017-05-30
Semiconductor Devices And Methods For Manufacturing The Same App 20170148639 - Tsai; Chun Hsiung ; et al.	2017-05-25
Semiconductor Device, Static Random Access Memory Cell And Manufacturing Method Of Semiconductor Device App 20170133386 - LEE; Yi-Jing ; et al.	2017-05-11
Integrated Circuit Having Field-effect Trasistors With Dielectric Fin Sidewall Structures And Manufacturing Method Thereof App 20170098648 - LEE; Yi-Jing ; et al.	2017-04-06
V-shaped epitaxially formed semiconductor layer Grant 9,601,574 - Kwok , et al. March 21, 2	2017-03-21
MOS devices with non-uniform P-type impurity profile Grant 9,601,619 - Sung , et al. March 21, 2	2017-03-21
Source and drain stressors with recessed top surfaces Grant 9,583,483 - Li , et al. February 28, 2	2017-02-28
Semiconductor Device And Manufacturing Method Thereof App 20170054023 - LI; Kun-Mu ; et al.	2017-02-23
Controlling the shape of source/drain regions in FinFETs Grant 9,515,187 - Kwok , et al. December 6, 2	2016-12-06
Semiconductor devices and methods for manufacturing the same Grant 9,496,149 - Tsai , et al. November 15, 2	2016-11-15
Modulating Germanium Percentage in MOS Devices App 20160254381 - Kwok; Tsz-Mei ; et al.	2016-09-01
MOS Device Having Source and Drain Regions With Embedded Germanium-Containing Diffusion Barrier App 20160254364 - Kwok; Tsz-Mei ; et al.	2016-09-01
V-Shaped Epitaxially Formed Semiconductor Layer App 20160190250 - Kwok; Tsz-Mei ; et al.	2016-06-30
Method for improving selectivity of epi process Grant 9,373,695 - Chen , et al. June 21, 2	2016-06-21
Modulating germanium percentage in MOS devices Grant 9,362,360 - Kwok , et al. June 7, 2	2016-06-07
Transistor Strain-inducing Scheme App 20160155819 - Kwok; Tsz-Mei ; et al.	2016-06-02
Method for incorporating impurity element in EPI silicon process Grant 9,356,150 - Su , et al. May 31, 2	2016-05-31
MOS device having source and drain regions with embedded germanium-containing diffusion barrier Grant 9,337,337 - Kwok , et al. May 10, 2	2016-05-10
MOS Devices Having Epitaxy Regions with Reduced Facets App 20160087078 - Li; Chii-Horng ; et al.	2016-03-24
Method Of Forming An Epitaxial Semiconductor Layer In A Recess And A Semiconductor Device Having The Same App 20160079362 - Tsai; Chun Hsiung ; et al.	2016-03-17
Transistor strain-inducing scheme Grant 9,287,398 - Kwok , et al. March 15, 2	2016-03-15
Method For Incorporating Impurity Element In Epi Silicon Process App 20150364604 - Su; Chien-Chang ; et al.	2015-12-17
MOS devices having epitaxy regions with reduced facets Grant 9,209,175 - Sung , et al. December 8, 2	2015-12-08
Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same Grant 9,209,020 - Tsai , et al. December 8, 2	2015-12-08
Method Of Forming An Epitaxial Semiconductor Layer In A Recess And A Semiconductor Device Having The Same App 20150318167 - Tsai; Chun Hsiung ; et al.	2015-11-05
Semiconductor Devices And Methods For Manufacturing The Same App 20150294865 - Tsai; Chun Hsiung ; et al.	2015-10-15
Method for forming epitaxial feature Grant 9,142,643 - Cheng , et al. September 22, 2	2015-09-22
Method for incorporating impurity element in EPI silicon process Grant 9,117,905 - Su , et al. August 25, 2	2015-08-25
Mechanisms for forming stressor regions in a semiconductor device Grant 9,117,745 - Tsai , et al. August 25, 2	2015-08-25
Transistor Strain-Inducing Scheme App 20150236157 - Kwok; Tsz-Mei ; et al.	2015-08-20
Modulating Germanium Percentage in MOS Devices App 20150228724 - Kwok; Tsz-Mei ; et al.	2015-08-13
Defect reduction for formation of epitaxial layer in source and drain regions Grant 9,076,734 - Tsai , et al. July 7, 2	2015-07-07
Germanium Profile for Channel Strain App 20150179796 - Sung; Hsueh-Chang ; et al.	2015-06-25
Controlling the Shape of Source/Drain Regions in FinFETs App 20150137183 - Kwok; Tsz-Mei ; et al.	2015-05-21
Modulating germanium percentage in MOS devices Grant 9,012,964 - Kwok , et al. April 21, 2	2015-04-21
Controlling the shape of source/drain regions in FinFETs Grant 8,975,144 - Kwok , et al. March 10, 2	2015-03-10
Source and Drain Stressors with Recessed Top Surfaces App 20150061024 - Li; Kun-Mu ; et al.	2015-03-05
Germanium Barrier Embedded in MOS Devices App 20150048417 - Kwok; Tsz-Mei ; et al.	2015-02-19
Modulating Germanium Percentage in MOS Devices App 20150041852 - Kwok; Tsz-Mei ; et al.	2015-02-12
MOS Devices with Non-Uniform P-type Impurity Profile App 20150021688 - Sung; Hsueh-Chang ; et al.	2015-01-22
MOS Devices Having Epitaxy Regions with Reduced Facets App 20150021696 - Sung; Hsueh-Chang ; et al.	2015-01-22
Defect Reduction for Formation of Epitaxial Layer in Source and Drain Regions App 20150024567 - Tsai; Chun Hsiung ; et al.	2015-01-22
Methods For Manufacturing Devices With Source/drain Structures App 20140308790 - KWOK; Tsz-Mei ; et al.	2014-10-16
Defect reduction for formation of epitaxial layer in source and drain regions Grant 8,853,039 - Tsai , et al. October 7, 2	2014-10-07
Method of manufacturing strained source/drain structures Grant 8,835,982 - Kwok , et al. September 16, 2	2014-09-16
Reducing pattern loading effect in epitaxy Grant 8,815,713 - Sung , et al. August 26, 2	2014-08-26
Semiconductor devices with strained source/drain structures Grant 8,796,788 - Kwok , et al. August 5, 2	2014-08-05
Devices With Strained Source/drain Structures App 20140209978 - KWOK; Tsz-Mei ; et al.	2014-07-31
Defect Reduction For Formation Of Epitaxial Layer In Source And Drain Regions App 20140197493 - Tsai; Chun Hsiung ; et al.	2014-07-17
Mechanisms For Forming Stressor Regions In A Semiconductor Device App 20140154876 - TSAI; Chun Hsiung ; et al.	2014-06-05
Method For Forming Epitaxial Feature App 20140134818 - Cheng; Yu-Hung ; et al.	2014-05-15
Reducing Pattern Loading Effect in Epitaxy App 20140127886 - Sung; Hsueh-Chang ; et al.	2014-05-08
Mechanisms for forming stressor regions in a semiconductor device Grant 8,674,453 - Tsai , et al. March 18, 2	2014-03-18
Method for fabricating a FinFET device Grant 8,652,894 - Lin , et al. February 18, 2	2014-02-18
Method For Improving Selectivity Of EPI Process App 20130299876 - Chen; Kuan-Yu ; et al.	2013-11-14
Method for improving selectivity of epi process Grant 8,487,354 - Chen , et al. July 16, 2	2013-07-16
Mechanisms For Forming Stressor Regions In A Semiconductor Device App 20130146949 - TSAI; Chun Hsiung ; et al.	2013-06-13
Semiconductor Device And Method Of Manufacturing The Same App 20130119444 - CHENG; Chun-Fai ; et al.	2013-05-16
Controlling the Shape of Source/Drain Regions in FinFETs App 20130089959 - Kwok; Tsz-Mei ; et al.	2013-04-11
Method For Fabricating A Finfet Device App 20130071980 - Lin; Hsien-Hsin ; et al.	2013-03-21
Controlling the shape of source/drain regions in FinFETs Grant 8,362,575 - Kwok , et al. January 29, 2	2013-01-29
Epitaxy Profile Engineering for FinFETs App 20130001705 - Su; Chien-Chang ; et al.	2013-01-03
Method of forming strained structures with compound profiles in semiconductor devices Grant 8,343,872 - Sung , et al. January 1, 2	2013-01-01
Method of fabricating a FinFET device Grant 8,310,013 - Lin , et al. November 13, 2	2012-11-13
High surface dopant concentration semiconductor device and method of fabricating Grant 8,278,196 - Huang , et al. October 2, 2	2012-10-02
Finfets and methods for forming the same Grant 8,264,021 - Lai , et al. September 11, 2	2012-09-11
Epitaxy profile engineering for FinFETs Grant 8,263,451 - Su , et al. September 11, 2	2012-09-11
Method Of Manufacturing Strained Source/drain Structures App 20120205715 - KWOK; Tsz-Mei ; et al.	2012-08-16
Method Of Manufacturing Strained Source/drain Structures App 20120181625 - KWOK; Tsz-Mei ; et al.	2012-07-19
High Surface Dopant Concentration Semiconductor Device And Method Of Fabricating App 20120018848 - Huang; Yu-Lien ; et al.	2012-01-26
Epitaxy Profile Engineering for FinFETs App 20110210404 - Su; Chien-Chang ; et al.	2011-09-01
Method Of Fabricating A Finfet Device App 20110193141 - Lin; Hsien-Hsin ; et al.	2011-08-11
Method For Incorporating Impurity Element In Epi Silicon Process App 20110147846 - Su; Chien-Chang ; et al.	2011-06-23
Method Of Forming Strained Structures In Semiconductor Devices App 20110108894 - Sung; Hsueh-Chang ; et al.	2011-05-12
Finfets And Methods For Forming The Same App 20110079829 - LAI; Li-Shyue ; et al.	2011-04-07
Controlling the Shape of Source/Drain Regions in FinFETs App 20110073952 - Kwok; Tsz-Mei ; et al.	2011-03-31
Method For Improving Selectivity Of Epi Process App 20110042729 - Chen; Kuan-Yu ; et al.	2011-02-24

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