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Patent applications and USPTO patent grants for Kwo; Jueinai Raynien.The latest application filed is for "article comprising an oxide layer on a gaas or gan-based semiconductor body".
Patent | Date |
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Article comprising an oxide layer on a GaAs or GaN-based semiconductor body Grant 6,469,357 - Hong , et al. October 22, 2 | 2002-10-22 |
High dielectric constant gate oxides for silicon-based devices Grant 6,404,027 - Hong , et al. June 11, 2 | 2002-06-11 |
Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Grant 6,271,069 - Chen , et al. August 7, 2 | 2001-08-07 |
Article comprising an oxide layer on a GaAs-based semiconductor body Grant 5,962,883 - Hong , et al. October 5, 1 | 1999-10-05 |
Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers Grant 5,948,216 - Cava , et al. September 7, 1 | 1999-09-07 |
Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article Grant 5,821,171 - Hong , et al. October 13, 1 | 1998-10-13 |
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