Kwan; Sze-Hon
Patent Applications and Registrations
Patent applications and USPTO patent grants for Kwan; Sze-Hon.The latest application filed is for "field effect trench transistor having lightly doped epitaxial region on the surface portion thereof".
- Kwan; Sze-Hon - San Francisco CA
- Kwan; Sze-Hon - Sunnyvale CA
| Patent | Date |
|---|---|
| Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof Grant 5,910,669 - Chang , et al. June 8, 1 | 1999-06-08 |
| Self-aligned method of fabricating terrace gate DMOS transistor Grant 5,879,994 - Kwan , et al. March 9, 1 | 1999-03-09 |
| Method of fabricating a self-aligned contact trench DMOS transistor structure Grant 5,665,619 - Kwan , et al. September 9, 1 | 1997-09-09 |
| Method of fabricating self-aligned contact trench DMOS transistors Grant 5,567,634 - Hebert , et al. October 22, 1 | 1996-10-22 |
| Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof Grant 5,532,179 - Chang , et al. July 2, 1 | 1996-07-02 |
| Trenched DMOS transistor with channel block at cell trench corners Grant 5,468,982 - Hshieh , et al. November 21, 1 | 1995-11-21 |
| Trenched DMOS transistor fabrication using six masks Grant 5,316,959 - Kwan , et al. May 31, 1 | 1994-05-31 |
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