Kuzuhara; Masaaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kuzuhara; Masaaki.The latest application filed is for "iii-nitride semiconductor electronic device, and method of fabricating iii-nitride semiconductor electronic device".

Company Profile

0.21.20

Kuzuhara; Masaaki - Fukui JP
KUZUHARA; Masaaki - Fukui-shi JP
KUZUHARA; Masaaki - Fukui-city JP
Kuzuhara; Masaaki - Tokyo JP
Kuzuhara; Masaaki - Minato-ku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device Grant 8,653,561 - Hashimoto , et al. February 18, 2	2014-02-18
Iii-nitride Semiconductor Electronic Device, And Method Of Fabricating Iii-nitride Semiconductor Electronic Device App 20110278647 - HASHIMOTO; Shin ; et al.	2011-11-17
Semiconductor Device And Method Of Manufacturing The Same App 20110186861 - MALHAN; Rajesh Kumar ; et al.	2011-08-04
Field-effect transistor having group III nitride electrode structure Grant 7,973,335 - Okamoto , et al. July 5, 2	2011-07-05
Semiconductor device Grant 7,859,014 - Nakayama , et al. December 28, 2	2010-12-28
Electrode, method for producing same and semiconductor device using same Grant 7,615,868 - Nakayama , et al. November 10, 2	2009-11-10
Ohmic electrode structure of nitride semiconductor device Grant 7,459,788 - Nakayama , et al. December 2, 2	2008-12-02
Electrode, method for producing same and semiconductor device using same App 20080179743 - Nakayama; Tatsuo ; et al.	2008-07-31
Electrode, method for producing same and semiconductor device using same Grant 7,323,783 - Nakayama , et al. January 29, 2	2008-01-29
Schottky Electrode of Nitride Semiconductor Device and Process for Production Thereof App 20080006853 - Miyamoto; Hironobu ; et al.	2008-01-10
Field-effect transistor Grant 7,256,432 - Okamoto , et al. August 14, 2	2007-08-14
Ohmic electrode structure of nitride semiconductor device App 20070164305 - Nakayama; Tatsuo ; et al.	2007-07-19
Field effect transistor App 20070164326 - Okamoto; Yasuhiro ; et al.	2007-07-19
Semiconductor device App 20070158692 - Nakayama; Tatsuo ; et al.	2007-07-12
Electrode, method for producing same and semiconductor device using same App 20070018316 - Nakayama; Tatsuo ; et al.	2007-01-25
Semiconductor device having Schottky junction electrode Grant 7,071,526 - Ando , et al. July 4, 2	2006-07-04
Semiconductor device App 20060054929 - Nakayama; Tatsuo ; et al.	2006-03-16
Field-effect transistor App 20060043415 - Okamoto; Yasuhiro ; et al.	2006-03-02
Semiconductor device having schottky junction electrode App 20050151255 - Ando, Yuji ; et al.	2005-07-14
Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances Grant 6,765,241 - Ohno , et al. July 20, 2	2004-07-20
Semiconductor device App 20030151064 - Ohno, Yasuo ; et al.	2003-08-14
Hetero-junction field effect transistor having an intermediate layer Grant 6,552,373 - Ando , et al. April 22, 2	2003-04-22
Compound semiconductor field effect transistor Grant 6,534,790 - Kato , et al. March 18, 2	2003-03-18
Field effect transistor App 20030006437 - Mizuta, Masashi ; et al.	2003-01-09
Semiconductor device with schottky electrode having high schottky barrier Grant 6,492,669 - Nakayama , et al. December 10, 2	2002-12-10
Schottky gate field effect transistor with high output characteristic App 20020171096 - Wakejima, Akio ; et al.	2002-11-21
Field effect transistor Grant 6,483,135 - Mizuta , et al. November 19, 2	2002-11-19
Semiconductor device Grant 6,465,814 - Kasahara , et al. October 15, 2	2002-10-15
Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate Grant 6,441,391 - Ohno , et al. August 27, 2	2002-08-27
Method of manufacturing semiconductor device with sidewall metal layers App 20020048889 - Hayama, Nobuyuki ; et al.	2002-04-25
Semiconductor device App 20020047113 - Ohno, Yasuo ; et al.	2002-04-25
Semiconductor device with schottky electrode having high schottky barrier App 20020017696 - Nakayama, Tatsuo ; et al.	2002-02-14
Semiconductor device App 20020017648 - Kasahara, Kensuke ; et al.	2002-02-14
Hetero-junction field effect transistor having an intermediate layer App 20010040247 - Ando, Yuji ; et al.	2001-11-15
Field effect transistor and manufacturing method thereof App 20010019131 - Kato, Takehiko ; et al.	2001-09-06
Fet having non-overlapping field control electrode between gate and drain Grant 6,100,571 - Mizuta , et al. August 8, 2	2000-08-08
Field effect transistor Grant 5,504,353 - Kuzuhara April 2, 1	1996-04-02
Field effect transistor having an improved transistor characteristic Grant 5,466,955 - Maruhashi , et al. November 14, 1	1995-11-14
Field effect transistor having a multi-layer channel Grant 5,453,631 - Onda , et al. September 26, 1	1995-09-26
Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer Grant 5,373,168 - Ando , et al. December 13, 1	1994-12-13

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