Kuroi; Takashi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kuroi; Takashi.The latest application filed is for "semiconductor device and its manufacturing method".

Company Profile

0.32.25

Kuroi; Takashi - Tokyo N/A JP
Kuroi; Takashi - Chiyoda-ku JP
Kuroi, Takashi - Hyogo JP
Kuroi; Takashi - Itami JP
Kuroi; Takashi - Hyogo-ken JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device and manufacturing method thereof Grant 8,592,284 - Ishibashi , et al. November 26, 2	2013-11-26
Semiconductor device and its manufacturing method Grant 8,043,918 - Kuroi , et al. October 25, 2	2011-10-25
Semiconductor Device And Its Manufacturing Method App 20100285651 - KUROI; Takashi ; et al.	2010-11-11
Semiconductor device and its manufacturing method Grant 7,791,163 - Kuroi , et al. September 7, 2	2010-09-07
Semiconductor Device And Manufacturing Method Thereof App 20100044802 - Ishibashi; Masato ; et al.	2010-02-25
Semiconductor Device and Its Manufacturing Method App 20070241373 - Kuroi; Takashi ; et al.	2007-10-18
Semiconductor device, and manufacturing method thereof App 20060163624 - Kuroi; Takashi	2006-07-27
Semiconductor device and manufacturing method thereof App 20060027883 - Kuroi; Takashi ; et al.	2006-02-09
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate Grant 6,890,837 - Kuroi , et al. May 10, 2	2005-05-10
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Grant 6,841,440 - Kuroi , et al. January 11, 2	2005-01-11
Semiconductor device having vertical transistor App 20040159857 - Horita, Katsuyuki ; et al.	2004-08-19
Semiconductor device having high impurity concentration region and low impurity concentration region in side surface of active region App 20040124491 - Yamashita, Tomohiro ; et al.	2004-07-01
Semiconductor device and method of manufacturing the same App 20040108524 - Kitazawa, Masashi ; et al.	2004-06-10
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film Grant 6,744,113 - Kuroi , et al. June 1, 2	2004-06-01
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate Grant 6,737,315 - Kuroi , et al. May 18, 2	2004-05-18
Semiconductor device and manufacturing method thereof App 20040092057 - Kuroi, Takashi ; et al.	2004-05-13
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate App 20040082165 - Kuroi, Takashi ; et al.	2004-04-29
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film App 20040053458 - Kuroi, Takashi ; et al.	2004-03-18
Semiconductor device and manufacturing method thereof Grant 6,707,099 - Shiozawa , et al. March 16, 2	2004-03-16
Method of manufacturing semiconductor device Grant 6,667,221 - Kitazawa , et al. December 23, 2	2003-12-23
Semiconductor device including inversely tapered gate electrode and manufacturing method thereof Grant 6,661,066 - Kuroi , et al. December 9, 2	2003-12-09
Method of manufacturing semiconductor device App 20030157755 - Kitazawa, Masashi ; et al.	2003-08-21
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same App 20030143810 - Kuroi, Takashi ; et al.	2003-07-31
Semiconductor device and manufacturing method thereof App 20030127685 - Shiozawa, Katsuomi ; et al.	2003-07-10
Semiconductor Device Achieving Reduced Wiring Length And Reduced Wiring Delay By Forming First Layer Wiring And Gate Upper Electrode In Same Wire Layer App 20030075744 - Horita, Katsuyuki ; et al.	2003-04-24
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Grant 6,541,825 - Kuroi , et al. April 1, 2	2003-04-01
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate App 20030054597 - Kuroi, Takashi ; et al.	2003-03-20
Method of manufacturing semiconductor device Grant 6,503,799 - Horita , et al. January 7, 2	2003-01-07
Static-type semiconductor memory device App 20020190398 - Morishima, Chikayoshi ; et al.	2002-12-19
Semiconductor device and method of fabricating same App 20020158303 - Kuroi, Takashi ; et al.	2002-10-31
Method Of Manufacturing Semiconductor Device App 20020151143 - Shiozawa, Katsuomi ; et al.	2002-10-17
Method of manufacturing semiconductor device App 20020127841 - Horita, Katsuyuki ; et al.	2002-09-12
Semiconductor device and method of manufacturing the same App 20020038901 - Kuroi, Takashi ; et al.	2002-04-04
Semiconductor device and method of manufacturing same App 20020028568 - Ueno, Shuuichi ; et al.	2002-03-07
Semiconductor device and method of manufacturing same App 20020020867 - Shiozawa, Katsuomi ; et al.	2002-02-21
Semiconductor Device Including Inversely Tapered Gate Electrode And Manufacturing Method Thereof App 20020008293 - KUROI, TAKASHI ; et al.	2002-01-24
Semiconductor device and method for manufacturing same App 20020005529 - Horita, Katsuyuki ; et al.	2002-01-17
Method of manufacturing a semiconductor device Grant 6,323,102 - Horita , et al. November 27, 2	2001-11-27
Semiconductor device and method of fabricating the same Grant 6,300,664 - Kuroi , et al. October 9, 2	2001-10-09
Method for manufacturing an isolation trench having plural profile angles Grant 6,274,457 - Sakai , et al. August 14, 2	2001-08-14
Method of forming a trench type element isolation in semiconductor substrate Grant 6,268,263 - Sakai , et al. July 31, 2	2001-07-31
Semiconductor device and method of manufacturing the same Grant 6,218,262 - Kuroi , et al. April 17, 2	2001-04-17
Method of forming a layered wiring structure including titanium silicide Grant 6,180,519 - Kuroi , et al. January 30, 2	2001-01-30
Semiconductor device and manufacturing method thereof Grant 6,127,737 - Kuroi , et al. October 3, 2	2000-10-03
Semiconductor device and method of fabricating thereof Grant 6,017,800 - Sayama , et al. January 25, 2	2000-01-25
Semiconductor device and method of manufacturing the same Grant 5,889,335 - Kuroi , et al. March 30, 1	1999-03-30
Complementary MOS field effect transistor with tunnel effect means Grant 5,744,845 - Sayama , et al. April 28, 1	1998-04-28
Semiconductor device with a silicide layer Grant 5,710,438 - Oda , et al. January 20, 1	1998-01-20
Method of making semiconductor device having a plurality of impurity layers Grant 5,688,701 - Kobayashi , et al. November 18, 1	1997-11-18
Semiconductor device and manufacturing method therefor Grant 5,554,883 - Kuroi September 10, 1	1996-09-10
Semiconductor device having a plurality of impurity layers Grant 5,543,647 - Kobayashi , et al. August 6, 1	1996-08-06
Method of manufacturing semiconductor device isolation region Grant 5,538,916 - Kuroi , et al. July 23, 1	1996-07-23
Method of manufacturing a semiconductor device with double structured well Grant 5,536,665 - Komori , et al. July 16, 1	1996-07-16
Semiconductor memory device capable of electrically erasing and writing information Grant 5,488,245 - Shimizu , et al. January 30, 1	1996-01-30
Semiconductor device with double structured well Grant 5,446,305 - Komori , et al. August 29, 1	1995-08-29
Bipolar transistor having a high ion concentration buried floating collector and method of fabricating the same Grant 5,341,022 - Kuroi , et al. August 23, 1	1994-08-23

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