KURIHARA; Kaori

Patent Applications and Registrations

Patent applications and USPTO patent grants for KURIHARA; Kaori.The latest application filed is for "electrochemical sensor unit, electrode for electrochemical sensor, and method for manufacturing electrode for electrochemical sensor".

Company Profile

0.13.13

KURIHARA; Kaori - Hitachi-shi JP
Kurihara; Kaori - Ushiku JP
Kurihara; Kaori - Ushiku-shi JP
Kurihara; Kaori - Ibaraki N/A JP
Kurihara; Kaori - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Electrochemical Sensor Unit, Electrode For Electrochemical Sensor, And Method For Manufacturing Electrode For Electrochemical Sensor App 20220260516 - KURIHARA; Kaori ; et al.	2022-08-18
Gallium nitride-based light emitting diode Grant 9,853,182 - Choi , et al. December 26, 2	2017-12-26
Nitride semiconductor Grant 9,711,681 - Horie , et al. July 18, 2	2017-07-18
High efficiency light emitting diode and method of fabricating the same Grant 9,362,449 - Kim , et al. June 7, 2	2016-06-07
Nitride Semiconductor App 20160043273 - HORIE; Hideyoshi ; et al.	2016-02-11
Nitride semiconductor and nitride semiconductor crystal growth method Grant 9,048,100 - Horie , et al. June 2, 2	2015-06-02
Method For Producing M-plane Nitride-based Light-emitting Diode App 20150125980 - Kurihara; Kaori ; et al.	2015-05-07
Gallium Nitride-based Light Emitting Diode App 20140361247 - CHOI; Seung Kyu ; et al.	2014-12-11
High Efficiency Light Emitting Diode And Method Of Fabricating The Same App 20140353582 - KIM; Chang Yeon ; et al.	2014-12-04
Nitride Semiconductor And Nitride Semiconductor Crystalgrowth Method App 20140318441 - HORIE; Hideyoshi ; et al.	2014-10-30
Nitride Semiconductor App 20140073118 - HORIE; Hideyoshi ; et al.	2014-03-13
Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element Grant 8,652,948 - Horie , et al. February 18, 2	2014-02-18
Nitride semiconductor Grant 8,624,220 - Horie , et al. January 7, 2	2014-01-07
Nitride Semiconductor App 20110253974 - HORIE; Hideyoshi ; et al.	2011-10-20
Nitride Semiconductor And Nitride Semiconductor Crystal Growth Method App 20100252835 - Horie; Hideyoshi ; et al.	2010-10-07
Nitride Semiconductor, Nitride Semiconductor Crystal Growth Method, And Nitride Semiconductor Light Emitting Element App 20100244087 - Horie; Hideyoshi ; et al.	2010-09-30
III-V compound semiconductor crystals App 20050230672 - Kurihara, Kaori ; et al.	2005-10-20
VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices Grant 6,154,479 - Yoshikawa , et al. November 28, 2	2000-11-28
VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices Grant 5,778,018 - Yoshikawa , et al. July 7, 1	1998-07-07
Vertical-to-surface transmission electro-photonic device with ion implanted current control regions Grant 5,500,868 - Kurihara March 19, 1	1996-03-19
Semiconductor multilayer reflector and light emitting device with the same Grant 5,237,581 - Asada , et al. August 17, 1	1993-08-17

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