KURAMATA; Akito

Patent Applications and Registrations

Patent applications and USPTO patent grants for KURAMATA; Akito.The latest application filed is for "schottky barrier diode".

Company Profile

3.18.18

KURAMATA; Akito - Tokyo JP
Kuramata; Akito - Sayama JP
KURAMATA; Akito - Sayama-shi Saitama
Kuramata; Akito - Kawasaki JP
Kuramata; Akito - Yamanashi JP
Kuramata; Akito - Kanagawa JP
KURAMATA, AKITO - KAWASAKI-SHI JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Schottky Barrier Diode App 20220149158 - TAKIZAWA; Masaru ; et al.	2022-05-12
Semiconductor substrate, semiconductor element and method for producing semiconductor substrate Grant 11,264,241 - Kuramata , et al. March 1, 2	2022-03-01
Schottky barrier diode Grant 11,264,466 - Takizawa , et al. March 1, 2	2022-03-01
Schottky Barrier Diode App 20200194560 - TAKIZAWA; Masaru ; et al.	2020-06-18
Semiconductor Substrate, Semiconductor Element And Method For Producing Semiconductor Substrate App 20200168460 - KURAMATA; Akito ; et al.	2020-05-28
Schottky barrier diode Grant 10,600,874 - Takizawa , et al.	2020-03-24
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure Grant 10,230,007 - Sasaki , et al.	2019-03-12
Nitride Semiconductor Template And Method For Manufacturing Same App 20180033907 - MORISHIMA; Yoshikatsu ; et al.	2018-02-01
Semiconductor Element, Method For Manufacturing Same, Semiconductor Substrate, And Crystal Laminate Structure App 20170213918 - SASAKI; Kohei ; et al.	2017-07-27
Schottky Barrier Diode App 20170162655 - TAKIZAWA; Masaru ; et al.	2017-06-08
Schottky barrier diode Grant 9,595,586 - Takizawa , et al. March 14, 2	2017-03-14
Schottky Barrier Diode App 20160322467 - TAKIZAWA; Masaru ; et al.	2016-11-03
Schottky barrier diode Grant 9,412,882 - Takizawa , et al. August 9, 2	2016-08-09
Schottky Barrier Diode App 20160043238 - TAKIZAWA; MASARU ; et al.	2016-02-11
Crystal Layered Structure And Light Emitting Element App 20150364646 - MORISHIMA; Yoshikatsu ; et al.	2015-12-17
Schottky barrier diode Grant 9,171,967 - Takizawa , et al. October 27, 2	2015-10-27
Semiconductor stacked body, method for manufacturing same, and semiconductor element Grant 9,153,648 - Sato , et al. October 6, 2	2015-10-06
Schottky Barrier Diode App 20140332823 - Takizawa; Masaru ; et al.	2014-11-13
Semiconductor Stacked Body, Method For Manufacturing Same, And Semiconductor Element App 20140048823 - Sato; Shinkuro ; et al.	2014-02-20
Semiconductor photodetecting device and method for fabricating the same Grant 7,507,600 - Yasuoka , et al. March 24, 2	2009-03-24
Method For Fabricating Light-emitting Device App 20080131987 - Horino; Kazuhiko ; et al.	2008-06-05
Optical circuit device and method for fabricating the same Grant 6,990,261 - Kuramata January 24, 2	2006-01-24
Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element Grant 6,984,840 - Kuramata , et al. January 10, 2	2006-01-10
Semiconductor photodetecting device and method for fabricating the same App 20050272180 - Yasuoka, Nami ; et al.	2005-12-08
Semiconductor photodetecting device and method for fabricating the same Grant 6,943,422 - Yasuoka , et al. September 13, 2	2005-09-13
Semiconductor photodetecting device and method for fabricating the same App 20040145025 - Yasuoka, Nami ; et al.	2004-07-29
Semiconductor light emitting device and method of manufacturing the same Grant 6,661,822 - Kubota , et al. December 9, 2	2003-12-09
Semiconductor laser, semiconductor device, and their manufacture methods Grant 6,606,335 - Kuramata , et al. August 12, 2	2003-08-12
Optical circuit device and methd for fabricating the same App 20030113053 - Kuramata, Akito	2003-06-19
Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same Grant 6,555,403 - Domen , et al. April 29, 2	2003-04-29
Optical Semiconductor Device Having An Epitaxial Layer Of Iii-v Compound Semiconductor Material Containing N As A Group V Element App 20020110945 - KURAMATA, AKITO ; et al.	2002-08-15
Semiconductor laser and method for fabricating the same Grant 5,850,410 - Kuramata December 15, 1	1998-12-15
Semiconductor laser Grant 5,408,487 - Uchida , et al. April 18, 1	1995-04-18

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