KUO; Liang-Tai

Patent Applications and Registrations

Patent applications and USPTO patent grants for KUO; Liang-Tai.The latest application filed is for "voltage reference circuit and method for providing reference voltage".

Company Profile

6.10.12

KUO; Liang-Tai - Zhudong Township TW
Kuo; Liang-Tai - Hsinchu County TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Voltage Reference Circuit And Method For Providing Reference Voltage App 20210255656 - WANG; Yen-Ting ; et al.	2021-08-19
Semiconductor Device With Reduced Flicker Noise App 20210202711 - Cheng; Hsin-Li ; et al.	2021-07-01
Semiconductor device with reduced flicker noise Grant 10,971,596 - Cheng , et al. April 6, 2	2021-04-06
Semiconductor Device With Reduced Flicker Noise App 20200144389 - Cheng; Hsin-Li ; et al.	2020-05-07
Memory cell including a plurality of wells Grant 10,553,597 - Chen , et al. Fe	2020-02-04
Semiconductor Device With Reduced Flicker Noise App 20200035806 - Cheng; Hsin-Li ; et al.	2020-01-30
Semiconductor device with reduced flicker noise Grant 10,529,818 - Cheng , et al. J	2020-01-07
Memory Device And Memory Cell App 20190131312 - CHEN; Shih-Hsien ; et al.	2019-05-02
Memory device and memory cell Grant 10,163,920 - Chen , et al. Dec	2018-12-25
Non-volatile memory having a gate-layered triple well structure Grant 9,711,516 - Chen , et al. July 18, 2	2017-07-18
Memory Device And Memory Cell App 20170194338 - CHEN; Shih-Hsien ; et al.	2017-07-06
Non-volatile Memory And Manufacturing Method Thereof App 20170125425 - CHEN; SHIH-HSIEN ; et al.	2017-05-04
Memory device, memory cell and memory cell layout Grant 9,620,594 - Chen , et al. April 11, 2	2017-04-11
Mechanisms for preventing leakage currents in memory cells Grant 9,384,815 - Chen , et al. July 5, 2	2016-07-05
Memory Device, Memory Cell And Memory Cell Layout App 20160093628 - CHEN; Shih-Hsien ; et al.	2016-03-31
Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency Grant 9,159,741 - Liao , et al. October 13, 2	2015-10-13
Structure And Method For Single Gate Non-volatile Memory Device Having A Capacitor Well Doping Design With Improved Coupling Efficiency App 20150132905 - Liao; Ta-Chuan ; et al.	2015-05-14
Mechanisms For Preventing Leakage Currents In Memory Cells App 20150098266 - CHEN; Shih-Hsien ; et al.	2015-04-09
Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency Grant 8,890,225 - Liao , et al. November 18, 2	2014-11-18
Structure And Method For Single Gate Non-volatile Memory Device Having A Capacitor Well Doping Design With Improved Coupling Efficiency App 20130092991 - Liao; Ta-Chuan ; et al.	2013-04-18

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