| Patent | Date |
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Adapter for blood dispensing
Grant 10,842,928 - Kimura , et al. November 24, 2 | 2020-11-24 |
Pipette tip and liquid injection method
Grant 10,639,625 - Kuniyasu , et al. | 2020-05-05 |
Measurement apparatus
Grant 10,101,318 - Nishijima , et al. October 16, 2 | 2018-10-16 |
Container for centrifugal separation and its production method
Grant 10,092,910 - Nishio , et al. October 9, 2 | 2018-10-09 |
Pipette Tip And Liquid Injection Method
App 20180207633 - KUNIYASU; Toshiaki ; et al. | 2018-07-26 |
Adapter For Blood Dispensing
App 20180055990 - KIMURA; Toshihito ; et al. | 2018-03-01 |
Container For Centrifugal Separation And Its Production Method
App 20160221005 - NISHIO; Tomonori ; et al. | 2016-08-04 |
Measurement Apparatus
App 20160223516 - NISHIJIMA; Kazuteru ; et al. | 2016-08-04 |
Adapter For Blood Sample Dispensing, And Dispensing Kit And Needle Kit Provided Therewith
App 20160100786 - NISHIO; Tomonori ; et al. | 2016-04-14 |
Ultrasonic Generator
App 20090247875 - Kuniyasu; Toshiaki ; et al. | 2009-10-01 |
Ultrasonic transducer and method of manufacturing the same
Grant 7,309,948 - Kuniyasu , et al. December 18, 2 | 2007-12-18 |
Multilayered structure and method of manufacturing the same, and ultrasonic transducer
Grant 7,199,509 - Kuniyasu , et al. April 3, 2 | 2007-04-03 |
Ultrasonic probe and producing method therefor
App 20060241473 - Kuniyasu; Toshiaki | 2006-10-26 |
Multilayered structure and method of manufacturing the same, and ultrasonic transducer
App 20060154075 - Kuniyasu; Toshiaki ; et al. | 2006-07-13 |
Laminated structure and method of manufacturing the same
Grant 7,061,166 - Kuniyasu June 13, 2 | 2006-06-13 |
Multilayered structure, multilayered structure array and method of manufacturing the same
Grant 7,054,135 - Kuniyasu May 30, 2 | 2006-05-30 |
Multilayered Structure, Multilayered Structure Array And Method Of Manufacturing The Same
App 20060067029 - Kuniyasu; Toshiaki | 2006-03-30 |
Semiconductor laser element and semiconductor laser
Grant 6,999,486 - Kuniyasu , et al. February 14, 2 | 2006-02-14 |
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
App 20050164420 - Kuniyasu, Toshiaki ; et al. | 2005-07-28 |
Ultrasonic transducer and method of manufacturing the same
App 20050140248 - Kuniyasu, Toshiaki ; et al. | 2005-06-30 |
Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection
Grant 6,901,100 - Mukaiyama , et al. May 31, 2 | 2005-05-31 |
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
Grant 6,888,866 - Kuniyasu , et al. May 3, 2 | 2005-05-03 |
Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer
Grant 6,859,478 - Kuniyasu February 22, 2 | 2005-02-22 |
Laminated structure and method of manufacturing the same
App 20040251784 - Kuniyasu, Toshiaki | 2004-12-16 |
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
Grant 6,797,416 - Wada , et al. September 28, 2 | 2004-09-28 |
Semiconductor laser element and semiconductor laser
App 20040165626 - Kuniyasu, Toshiaki ; et al. | 2004-08-26 |
Semiconductor laser device
Grant 6,744,797 - Kuniyasu , et al. June 1, 2 | 2004-06-01 |
Semiconductor laser element and semiconductor laser
Grant 6,738,403 - Kuniyasu , et al. May 18, 2 | 2004-05-18 |
Substrate including wide low-defect region for use in semiconductor element
Grant 6,709,513 - Fukunaga , et al. March 23, 2 | 2004-03-23 |
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
App 20030180580 - Wada, Mitsugu ; et al. | 2003-09-25 |
Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer
App 20030136969 - Kuniyasu, Toshiaki | 2003-07-24 |
Ultrasonic transducer and method of manufacturing the same
App 20030102777 - Kuniyasu, Toshiaki ; et al. | 2003-06-05 |
GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements
App 20030047746 - Kuniyasu, Toshiaki ; et al. | 2003-03-13 |
Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection
App 20030007532 - Mukaiyama, Akihiro ; et al. | 2003-01-09 |
Substrate including wide low-defect region for use in semiconductor element
App 20030006211 - Fukunaga, Toshiaki ; et al. | 2003-01-09 |
Semiconductor laser device
App 20020146051 - Kuniyasu, Toshiaki ; et al. | 2002-10-10 |
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
App 20020061044 - Kuniyasu, Toshiaki ; et al. | 2002-05-23 |
Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer,and dopant to regrowth layer is diffused into near-edge region of active layer
App 20020050598 - Kuniyasu, Toshiaki | 2002-05-02 |
Semiconductor laser element and semiconductor laser
App 20020018499 - Kuniyasu, Toshiaki ; et al. | 2002-02-14 |
Semiconductor light emitting device
Grant 6,268,230 - Kuniyasu July 31, 2 | 2001-07-31 |
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