Kung; Pu Ju

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kung; Pu Ju.The latest application filed is for "trench mos device having a termination structure with multiple field-relaxation trenches for high voltage applications".

Company Profile

0.8.6

Kung; Pu Ju - New Taipei TW
Kung; Pu Ju - New Taipei City TW
Kung; Pu-Ju - Taipei N/A CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications Grant 9,178,015 - Lin , et al. November 3, 2	2015-11-03
Trench Mos Device Having A Termination Structure With Multiple Field-relaxation Trenches For High Voltage Applications App 20150200250 - Lin, I; Yi-Yu ; et al.	2015-07-16
Low forward voltage drop transient voltage suppressor and method of fabricating Grant 8,982,524 - Kao , et al. March 17, 2	2015-03-17
Low Forward Voltage Drop Transient Voltage Suppressor And Method Of Fabricating App 20120200975 - Kao; Lung-Ching ; et al.	2012-08-09
Low forward voltage drop transient voltage suppressor and method of fabricating Grant 8,111,495 - Kao , et al. February 7, 2	2012-02-07
High breakdown voltage diode and method of forming same Grant 7,755,102 - Kao , et al. July 13, 2	2010-07-13
Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same Grant 7,560,355 - Kao , et al. July 14, 2	2009-07-14
Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same App 20080096360 - Kao; Lung-Ching ; et al.	2008-04-24
High breakdown voltage diode and method of forming same App 20080079020 - Kao; Lung-Ching ; et al.	2008-04-03
Low forward voltage drop transient voltage suppressor and method of fabricating App 20080013240 - Kao; Lung-Ching ; et al.	2008-01-17
Asymmetric bidirectional transient voltage suppressor and method of forming same App 20060216913 - Kung; Pu-ju ; et al.	2006-09-28
Trench MOS device and termination structure Grant 6,396,090 - Hsu , et al. May 28, 2	2002-05-28
Method of forming trench MOS device and termination structure Grant 6,309,929 - Hsu , et al. October 30, 2	2001-10-30

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