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Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon Grant 6,645,836 - Kanzawa , et al. November 11, 2 | 2003-11-11 |
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SiGeC semiconductor crystal and production method thereof Grant 6,537,369 - Saitoh , et al. March 25, 2 | 2003-03-25 |
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Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer Grant 6,190,975 - Kubo , et al. February 20, 2 | 2001-02-20 |
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