Ku; Shu E
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ku; Shu E.The latest application filed is for "method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant".
- Ku; Shu E - Miado TW
- Ku; Shu-E - Miaoli TW
- Ku, Shu E. - Shihu Shiang TW
- Ku; Shu E - Miadi TW
- Ku, Shu E. - Miaoli TW
| Patent | Date |
|---|---|
| Thin interface layer to improve copper etch stop Grant 6,884,659 - Chen , et al. April 26, 2 | 2005-04-26 |
| Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant Grant 6,756,321 - Ko , et al. June 29, 2 | 2004-06-29 |
| Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant App 20040067658 - Ko, Chung-Chi ; et al. | 2004-04-08 |
| Thin interface layer to improve copper etch stop App 20040038550 - Chen, Bi-Trong ; et al. | 2004-02-26 |
| Thin interface layer to improve copper etch stop Grant 6,623,654 - Chen , et al. September 23, 2 | 2003-09-23 |
| Thin interface layer to improve copper etch stop App 20030089678 - Chen, Bi-Trong ; et al. | 2003-05-15 |
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