| Patent | Date |
|---|
Partial buried channel transfer device for image sensors
Grant 9,698,185 - Chen , et al. July 4, 2 | 2017-07-04 |
CMOS Image Sensor With Integrated Silicon Color Filters
App 20140374862 - Liu; ChiaYing ; et al. | 2014-12-25 |
Method, apparatus and system for providing improved full well capacity in an image sensor pixel
Grant 8,804,021 - Manabe , et al. August 12, 2 | 2014-08-12 |
Etching narrow, tall dielectric isolation structures from a dielectric layer
Grant 8,729,655 - Liu , et al. May 20, 2 | 2014-05-20 |
Pad design for circuit under pad in semiconductor devices
Grant 8,729,712 - Qian , et al. May 20, 2 | 2014-05-20 |
Etching Narrow, Tall Dielectric Isolation Structures From A Dielectric Layer
App 20140035087 - Liu; Chia-Ying ; et al. | 2014-02-06 |
Pad Design For Circuit Under Pad In Semiconductor Devices
App 20140035089 - Qian; Yin ; et al. | 2014-02-06 |
Method of damage-free impurity doping for CMOS image sensors
Grant 8,614,112 - Ku , et al. December 24, 2 | 2013-12-24 |
Pad design for circuit under pad in semiconductor devices
Grant 8,569,856 - Qian , et al. October 29, 2 | 2013-10-29 |
Isolation area between semiconductor devices having additional active area
Grant 8,471,316 - Tai , et al. June 25, 2 | 2013-06-25 |
Seal ring support for backside illuminated image sensor
Grant 8,466,010 - Tai , et al. June 18, 2 | 2013-06-18 |
Seal Ring Support For Backside Illuminated Image Sensor
App 20130122637 - Tai; Hsin-Chih ; et al. | 2013-05-16 |
Method, Apparatus And System For Providing Improved Full Well Capacity In An Image Sensor Pixel
App 20130113969 - Manabe; Sohei ; et al. | 2013-05-09 |
Pad Design For Circuit Under Pad In Semiconductor Devices
App 20130113065 - Qian; Yin ; et al. | 2013-05-09 |
Partial Buried Channel Transfer Device For Image Sensors
App 20130092982 - Chen; Gang ; et al. | 2013-04-18 |
Isolation Area Between Semiconductor Devices Having Additional Active Area
App 20130056808 - Tai; Hsin-Chih ; et al. | 2013-03-07 |
Seal ring support for backside illuminated image sensor
Grant 8,373,243 - Tai , et al. February 12, 2 | 2013-02-12 |
Implanted metal silicide for semiconductor device
Grant 8,349,732 - Chuang , et al. January 8, 2 | 2013-01-08 |
Etching narrow, tall dielectric isolation structures from a dielectric layer
Grant 8,338,263 - Liu , et al. December 25, 2 | 2012-12-25 |
Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors
App 20120319242 - Mao; Duli ; et al. | 2012-12-20 |
Etching Narrow, Tall Dielectric Isolation Structures From A Dielectric Layer
App 20120319230 - Liu; Chia-Ying ; et al. | 2012-12-20 |
Method, Apparatus And System To Provide Conductivity For A Substrate Of An Image Sensing Pixel
App 20120280109 - Mao; Duli ; et al. | 2012-11-08 |
High-k metal gate device
Grant 8,258,546 - Hung , et al. September 4, 2 | 2012-09-04 |
Seal Ring Support For Backside Illuminated Image Sensor
App 20120175722 - Tai; Hsin-Chih ; et al. | 2012-07-12 |
Shallow junction formation and high dopant activation rate of MOS devices
Grant 8,212,253 - Nieh , et al. July 3, 2 | 2012-07-03 |
Method Of Damage-free Impurity Doping For Cmos Image Sensors
App 20120080765 - Ku; Keh-Chiang ; et al. | 2012-04-05 |
Shallow Junction Formation and High Dopant Activation Rate of MOS Devices
App 20110316079 - Nieh; Chun-Feng ; et al. | 2011-12-29 |
Wafer dicing using scribe line etch
Grant 8,071,429 - Qian , et al. December 6, 2 | 2011-12-06 |
Junction profile engineering using staged thermal annealing
Grant 8,058,134 - Wang , et al. November 15, 2 | 2011-11-15 |
High-K Metal Gate Device
App 20110272766 - Hung; Cheng-Lung ; et al. | 2011-11-10 |
Shallow junction formation and high dopant activation rate of MOS devices
Grant 8,039,375 - Nieh , et al. October 18, 2 | 2011-10-18 |
Implantation method for reducing threshold voltage for high-K metal gate device
Grant 7,994,051 - Hung , et al. August 9, 2 | 2011-08-09 |
Image Sensor With Epitaxially Self-aligned Photo Sensors
App 20110169991 - Ku; Keh-Chiang ; et al. | 2011-07-14 |
Junction Profile Engineering Using Staged Thermal Annealing
App 20100210086 - Wang; Li-Ting ; et al. | 2010-08-19 |
Semiconductor device having ultra-shallow and highly activated source/drain extensions
Grant 7,741,699 - Ku , et al. June 22, 2 | 2010-06-22 |
Reducing poly-depletion through co-implanting carbon and nitrogen
Grant 7,736,968 - Ku , et al. June 15, 2 | 2010-06-15 |
Reducing Poly-depletion Through Co-implanting Carbon And Nitrogen
App 20100105185 - Ku; Keh-Chiang ; et al. | 2010-04-29 |
Implantation Method For Reducing Threshold Voltage For High-k Metal Gate Device
App 20100096705 - Hung; Cheng-Lung ; et al. | 2010-04-22 |
Structure and a Method of Manufacture for Low Resistance NiSix
App 20100013029 - Chuang; Harry ; et al. | 2010-01-21 |
Short channel effect engineering in MOS device using epitaxially carbon-doped silicon
Grant 7,504,292 - Ku , et al. March 17, 2 | 2009-03-17 |
Advanced activation approach for MOS devices
Grant 7,494,857 - Chen , et al. February 24, 2 | 2009-02-24 |
Junction leakage reduction in SiGe process by implantation
Grant 7,482,211 - Nieh , et al. January 27, 2 | 2009-01-27 |
SiGe or SiC layer on STI sidewalls
App 20080290420 - Yu; Ming-Hua ; et al. | 2008-11-27 |
Shallow junction formation and high dopant activation rate of MOS devices
App 20080293204 - Nieh; Chun-Feng ; et al. | 2008-11-27 |
Method Of Enhancing Dopant Activation Without Suffering Additional Dopant Diffusion
App 20080242039 - Ku; Keh-Chiang ; et al. | 2008-10-02 |
Advanced activation approach for MOS devices
App 20080160709 - Chen; Chien-Hao ; et al. | 2008-07-03 |
Short channel effect engineering in MOS device using epitaxially carbon-doped silicon
App 20080132019 - Ku; Keh-Chiang ; et al. | 2008-06-05 |
Junction leakage reduction in SiGe process by tilt implantation
App 20070298557 - Nieh; Chun-Feng ; et al. | 2007-12-27 |
Junction leakage reduction in SiGe process by implantation
App 20070298565 - Nieh; Chun-Feng ; et al. | 2007-12-27 |
Ultra-shallow and highly activated source/drain extension formation using phosphorus
App 20070284615 - Ku; Keh-Chiang ; et al. | 2007-12-13 |
| 