Patent | Date |
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Shared metal gate stack with tunable work function Grant 10,756,194 - Bao , et al. A | 2020-08-25 |
Integrated circuit with replacement gate stacks and method of forming same Grant 10,553,498 - Bao , et al. Fe | 2020-02-04 |
Structures with thinned dielectric material Grant 10,361,132 - Bao , et al. | 2019-07-23 |
Field effect transistor stack with tunable work function Grant 10,312,157 - Bao , et al. | 2019-06-04 |
Field effect transistor stack with tunable work function Grant 10,249,543 - Bao , et al. | 2019-04-02 |
Shared metal gate stack with tunable work function Grant 10,243,055 - Bao , et al. | 2019-03-26 |
Modified tungsten silicon Grant 10,192,822 - Ferrer , et al. Ja | 2019-01-29 |
Shared Metal Gate Stack With Tunable Work Function App 20190027572 - Bao; Ruqiang ;   et al. | 2019-01-24 |
Field Effect Transistor Gate Stack App 20180330996 - Bao; Ruqiang ;   et al. | 2018-11-15 |
Field effect transistor gate stack Grant 10,079,182 - Bao , et al. September 18, 2 | 2018-09-18 |
Integrated circuit with replacement gate stacks and method of forming same Grant 10,074,574 - Bao , et al. September 11, 2 | 2018-09-11 |
Shared Metal Gate Stack With Tunable Work Function App 20180190784 - Bao; Ruqiang ;   et al. | 2018-07-05 |
Shared metal gate stack with tunable work function Grant 10,002,937 - Bao , et al. June 19, 2 | 2018-06-19 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor Grant 9,960,233 - Krishnan , et al. May 1, 2 | 2018-05-01 |
Integrated Circuit With Replacement Gate Stacks And Method Of Forming Same App 20180102294 - Bao; Ruqiang ;   et al. | 2018-04-12 |
Integrated Circuit With Replacement Gate Stacks And Method Of Forming Same App 20180096900 - Bao; Ruqiang ;   et al. | 2018-04-05 |
Integrated circuit with replacement gate stacks and method of forming same Grant 9,922,884 - Bao , et al. March 20, 2 | 2018-03-20 |
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs Grant 9,905,476 - Bao , et al. February 27, 2 | 2018-02-27 |
Field Effect Transistor Stack With Tunable Work Function App 20180047639 - Bao; Ruqiang ;   et al. | 2018-02-15 |
Field Effect Transistor Stack With Tunable Work Function App 20180047640 - Bao; Ruqiang ;   et al. | 2018-02-15 |
Field effect transistor stack with tunable work function Grant 9,859,169 - Bao , et al. January 2, 2 | 2018-01-02 |
Shared Metal Gate Stack With Tunable Work Function App 20170358655 - Bao; Ruqiang ;   et al. | 2017-12-14 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme Grant 9,824,930 - Ando , et al. November 21, 2 | 2017-11-21 |
Semiconductor device having a gate stack with tunable work function Grant 9,799,656 - Bao , et al. October 24, 2 | 2017-10-24 |
Method to form dual tin layers as pFET work metal stack Grant 9,768,171 - Bao , et al. September 19, 2 | 2017-09-19 |
Expitaxially Regrown Heterostructure Nanowire Lateral Tunnel Field Effect Transistor App 20170263707 - Krishnan; Siddarth A. ;   et al. | 2017-09-14 |
Integrated Circuit Having Improved Electromigration Performance And Method Of Forming Same App 20170236780 - Nag; Joyeeta ;   et al. | 2017-08-17 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme Grant 9,721,842 - Ando , et al. August 1, 2 | 2017-08-01 |
Field Effect Transistor Stack With Tunable Work Function App 20170207131 - Bao; Ruqiang ;   et al. | 2017-07-20 |
Field Effect Transistor Gate Stack App 20170207132 - Bao; Ruqiang ;   et al. | 2017-07-20 |
Structures With Thinned Dielectric Material App 20170207134 - BAO; Ruqiang ;   et al. | 2017-07-20 |
Semiconductor Device Having A Gate Stack With Tunable Work Function App 20170207219 - Bao; Ruqiang ;   et al. | 2017-07-20 |
Forming a semiconductor structure for reduced negative bias temperature instability Grant 9,704,758 - Bao , et al. July 11, 2 | 2017-07-11 |
Field effect transistors having multiple effective work functions Grant 9,691,662 - Ando , et al. June 27, 2 | 2017-06-27 |
Method To Form Dual Tin Layers As Pfet Work Metal Stack App 20170179125 - Bao; Ruqiang ;   et al. | 2017-06-22 |
Integrated circuit having improved electromigration performance and method of forming same Grant 9,679,810 - Nag , et al. June 13, 2 | 2017-06-13 |
Forming A Semiconductor Structure For Reduced Negative Bias Temperature Instability App 20170148686 - Bao; Ruqiang ;   et al. | 2017-05-25 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor Grant 9,660,027 - Krishnan , et al. May 23, 2 | 2017-05-23 |
ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNING FOR HIGH PERFORMANCE CMOS FinFETs App 20170133278 - Bao; Ruqiang ;   et al. | 2017-05-11 |
Integrated Circuit With Replacement Gate Stacks And Method Of Forming Same App 20170110375 - Bao; Ruqiang ;   et al. | 2017-04-20 |
Structures With Thinned Dielectric Material App 20170110376 - BAO; Ruqiang ;   et al. | 2017-04-20 |
Expitaxially Regrown Heterostructure Nanowire Lateral Tunnel Field Effect Transistor App 20170110539 - Krishnan; Siddarth A. ;   et al. | 2017-04-20 |
Replacement channel TFET Grant 9,627,508 - Chudzik , et al. April 18, 2 | 2017-04-18 |
Gate stack with tunable work function Grant 9,583,400 - Bao , et al. February 28, 2 | 2017-02-28 |
Forming a semiconductor structure for reduced negative bias temperature instability Grant 9,576,958 - Bao , et al. February 21, 2 | 2017-02-21 |
Field Effect Transistors Having Multiple Effective Work Functions App 20170047255 - Ando; Takashi ;   et al. | 2017-02-16 |
Semiconductor device having a gate stack with tunable work function Grant 9,559,016 - Bao , et al. January 31, 2 | 2017-01-31 |
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs Grant 9,553,092 - Bao , et al. January 24, 2 | 2017-01-24 |
Method and structure for III-V nanowire tunnel FETs Grant 9,548,381 - Krishnan , et al. January 17, 2 | 2017-01-17 |
ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNING FOR HIGH PERFORMANCE CMOS FinFETs App 20160365347 - Bao; Ruqiang ;   et al. | 2016-12-15 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme App 20160351452 - Ando; Takashi ;   et al. | 2016-12-01 |
Forming a semiconductor structure for reduced negative bias temperature instability Grant 9,502,307 - Bao , et al. November 22, 2 | 2016-11-22 |
Field effect transistors having multiple effective work functions Grant 9,484,427 - Ando , et al. November 1, 2 | 2016-11-01 |
Replacement Channel Tfet App 20160308025 - Chudzik; Michael P. ;   et al. | 2016-10-20 |
Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme Grant 9,472,419 - Ando , et al. October 18, 2 | 2016-10-18 |
Modified Tungsten Silicon App 20160240478 - Ferrer; Domingo A. ;   et al. | 2016-08-18 |
Constrained nanosecond laser anneal of metal interconnect structures Grant 9,412,658 - Gluschenkov , et al. August 9, 2 | 2016-08-09 |
Variable length multi-channel replacement metal gate including silicon hard mask Grant 9,397,177 - Chudzik , et al. July 19, 2 | 2016-07-19 |
Methods of forming multi-Vt III-V TFET devices Grant 9,397,199 - Kwon , et al. July 19, 2 | 2016-07-19 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme App 20160190015 - Ando; Takashi ;   et al. | 2016-06-30 |
Variable length multi-channel replacement metal gate including silicon hard mask Grant 9,373,690 - Chudzik , et al. June 21, 2 | 2016-06-21 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme Grant 9,330,938 - Ando , et al. May 3, 2 | 2016-05-03 |
Non-volatile memory structure employing high-k gate dielectric and metal gate Grant 9,318,336 - Breil , et al. April 19, 2 | 2016-04-19 |
Constrained Nanosecond Laser Anneal Of Metal Interconnect Structures App 20160086849 - Gluschenkov; Oleg ;   et al. | 2016-03-24 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme App 20160049337 - Ando; Takashi ;   et al. | 2016-02-18 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme App 20160027664 - Ando; Takashi ;   et al. | 2016-01-28 |
Field Effect Transistors Having Multiple Effective Work Functions App 20160005831 - Ando; Takashi ;   et al. | 2016-01-07 |
Variable Length Multi-channel Replacement Metal Gate Including Silicon Hard Mask App 20150349076 - Chudzik; Michael P. ;   et al. | 2015-12-03 |
Non-volatile memory structure employing high-k gate dielectric and metal gate Grant 9,099,394 - Breil , et al. August 4, 2 | 2015-08-04 |
Semiconductor devices having different gate oxide thicknesses Grant 9,087,722 - Adams , et al. July 21, 2 | 2015-07-21 |
Structure and method of T.sub.inv scaling for high k metal gate technology Grant 9,087,784 - Chudzik , et al. July 21, 2 | 2015-07-21 |
Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches Grant 9,087,927 - Chudzik , et al. July 21, 2 | 2015-07-21 |
Concurrently forming nFET and pFET gate dielectric layers Grant 9,059,315 - Ando , et al. June 16, 2 | 2015-06-16 |
Variable Length Multi-channel Replacement Metal Gate Including Silicon Hard Mask App 20150145062 - Chudzik; Michael P. ;   et al. | 2015-05-28 |
Structure and method of T.sub.inv scaling for high k metal gate technology Grant 9,006,837 - Chudzik , et al. April 14, 2 | 2015-04-14 |
Semiconductor Devices Having Different Gate Oxide Thicknesses App 20150069525 - Adams; Charlotte D. ;   et al. | 2015-03-12 |
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches App 20150044853 - Chudzik; Michael P. ;   et al. | 2015-02-12 |
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices Grant 8,952,460 - Brodsky , et al. February 10, 2 | 2015-02-10 |
Semiconductor devices having different gate oxide thicknesses Grant 8,941,177 - Adams , et al. January 27, 2 | 2015-01-27 |
FIN Field Effect Transistors Having Multiple Threshold Voltages App 20150021699 - Ando; Takashi ;   et al. | 2015-01-22 |
Intrinsic Channel Planar Field Effect Transistors Having Multiple Threshold Voltages App 20150021698 - Ando; Takashi ;   et al. | 2015-01-22 |
Replacement metal gate structures providing independent control on work function and gate leakage current Grant 8,912,607 - Kwon , et al. December 16, 2 | 2014-12-16 |
Thermally stable high-K tetragonal HFO.sub.2 layer within high aspect ratio deep trenches Grant 8,901,706 - Chudzik , et al. December 2, 2 | 2014-12-02 |
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices Grant 8,809,152 - Brodsky , et al. August 19, 2 | 2014-08-19 |
Replacement gate with reduced gate leakage current Grant 8,809,176 - Ando , et al. August 19, 2 | 2014-08-19 |
Concurrently Forming nFET and pFET Gate Dielectric Layers App 20140187028 - Ando; Takashi ;   et al. | 2014-07-03 |
Etch stop layer formation in metal gate process Grant 8,759,172 - Li , et al. June 24, 2 | 2014-06-24 |
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY App 20140170844 - Chudzik; Michael P. ;   et al. | 2014-06-19 |
Germanium Oxide Free Atomic Layer Deposition Of Silicon Oxide And High-k Gate Dielectric On Germanium Containing Channel For Cmos Devices App 20140061819 - Brodsky; MaryJane ;   et al. | 2014-03-06 |
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate App 20140057426 - Breil; Nicolas ;   et al. | 2014-02-27 |
Structure and method of T.sub.inv scaling for high .kappa. metal gate technology Grant 8,643,115 - Chudzik , et al. February 4, 2 | 2014-02-04 |
Semiconductor Devices Having Different Gate Oxide Thicknesses App 20140001575 - Adams; Charlotte DeWan ;   et al. | 2014-01-02 |
Insulating layers on different semiconductor materials Grant 8,592,325 - Shepard, Jr. , et al. November 26, 2 | 2013-11-26 |
Replacement gate with reduced gate leakage current Grant 8,581,351 - Ando , et al. November 12, 2 | 2013-11-12 |
High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof Grant 8,575,709 - Bu , et al. November 5, 2 | 2013-11-05 |
Etch Stop Layer Formation In Metal Gate Process App 20130277767 - Li; Zhengwen ;   et al. | 2013-10-24 |
Etch Stop Layer Formation In Metal Gate Process App 20130277764 - Li; Zhengwen ;   et al. | 2013-10-24 |
Replacement Gate With Reduced Gate Leakage Current App 20130217219 - Ando; Takashi ;   et al. | 2013-08-22 |
Replacement Metal Gate Structures Providing Independent Control On Work Function And Gate Leakage Current App 20130193522 - Kwon; Unoh ;   et al. | 2013-08-01 |
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY App 20130187239 - Chudzik; Michael P. ;   et al. | 2013-07-25 |
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches App 20130175665 - Chudzik; Michael P. ;   et al. | 2013-07-11 |
Replacement metal gate structures providing independent control on work function and gate leakage current Grant 8,450,169 - Kwon , et al. May 28, 2 | 2013-05-28 |
Germanium Oxide Free Atomic Layer Deposition Of Silicon Oxide And High-k Gate Dielectric On Germanium Containing Channel For Cmos Devices App 20130126986 - Brodsky; MaryJane ;   et al. | 2013-05-23 |
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate App 20130105879 - Breil; Nicolas ;   et al. | 2013-05-02 |
Replacement gate devices with barrier metal for simultaneous processing Grant 8,420,473 - Ando , et al. April 16, 2 | 2013-04-16 |
Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures Grant 8,354,313 - Kwon , et al. January 15, 2 | 2013-01-15 |
High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof Grant 8,318,565 - Bu , et al. November 27, 2 | 2012-11-27 |
High-k Dielectric Gate Structures Resistant To Oxide Growth At The Dielectric/silicon Substrate Interface And Methods Of Manufacture Thereof App 20120286374 - Bu; Huiming ;   et al. | 2012-11-15 |
Insulating Layers On Different Semiconductor Materials App 20120187453 - Shepard, JR.; Joseph F. ;   et al. | 2012-07-26 |
Replacement Gate With Reduced Gate Leakage Current App 20120181630 - Ando; Takashi ;   et al. | 2012-07-19 |
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY App 20120181616 - Chudzik; Michael P. ;   et al. | 2012-07-19 |
Replacement Gate Devices With Barrier Metal For Simultaneous Processing App 20120139053 - Ando; Takashi ;   et al. | 2012-06-07 |
Replacement Metal Gate Structures Providing Independent Control On Work Function and Gate Leakage Current App 20120132998 - Kwon; Unoh ;   et al. | 2012-05-31 |
Gate effective-workfunction modification for CMOS Grant 8,183,642 - Park , et al. May 22, 2 | 2012-05-22 |
Trench Capacitor And Method Of Fabrication App 20110298089 - Krishnan; Rishikesh ;   et al. | 2011-12-08 |
Method To Optimize Work Function In Complementary Metal Oxide Semiconductor (cmos) Structures App 20110269276 - Kwon; Unoh ;   et al. | 2011-11-03 |
High-k Dielectric Gate Structures Resistant To Oxide Growth At The Dielectric/silicon Substrate Interface And Methods Of Manufacture Thereof App 20110221012 - Bu; Huiming ;   et al. | 2011-09-15 |
Insulating Layers On Different Semiconductor Materials App 20110169141 - Shepard, JR.; Joseph F. ;   et al. | 2011-07-14 |
Gate Effective-Workfunction Modification for CMOS App 20110121401 - Park; Dae-Gyu ;   et al. | 2011-05-26 |
Gate effective-workfunction modification for CMOS Grant 7,947,549 - Park , et al. May 24, 2 | 2011-05-24 |
Semiconductor device having dual metal gates and method of manufacture Grant 7,838,908 - Kwon , et al. November 23, 2 | 2010-11-23 |
Method And Structure For Threshold Voltage Control And Drive Current Improvement For High-k Metal Gate Transistors App 20100244206 - Bu; Huiming ;   et al. | 2010-09-30 |
Semiconductor Device Having Dual Metal Gates And Method Of Manufacture App 20100187610 - Kwon; Unoh ;   et al. | 2010-07-29 |
Method of forming gate stack and structure thereof Grant 7,691,701 - Belyansky , et al. April 6, 2 | 2010-04-06 |
Gate Effective-Workfunction Modification for CMOS App 20090212369 - Park; Dae-Gyu ;   et al. | 2009-08-27 |
Nitrogen based plasma process for metal gate MOS device Grant 7,498,271 - Donaton , et al. March 3, 2 | 2009-03-03 |