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name:-0.063333988189697
name:-0.070833921432495
name:-0.0071649551391602
Krishnan; Siddarth A. Patent Filings

Krishnan; Siddarth A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Krishnan; Siddarth A..The latest application filed is for "shared metal gate stack with tunable work function".

Company Profile
6.75.68
  • Krishnan; Siddarth A. - Newark CA
  • Krishnan; Siddarth A. - Peerskill NY
  • Krishnan; Siddarth A. - Peekskill NY
  • KRISHNAN; Siddarth A. - Peekskills NY
  • Krishnan; Siddarth A. - Hopewell Junction NY US
  • Krishnan; Siddarth A - Peekskill NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Shared metal gate stack with tunable work function
Grant 10,756,194 - Bao , et al. A
2020-08-25
Integrated circuit with replacement gate stacks and method of forming same
Grant 10,553,498 - Bao , et al. Fe
2020-02-04
Structures with thinned dielectric material
Grant 10,361,132 - Bao , et al.
2019-07-23
Field effect transistor stack with tunable work function
Grant 10,312,157 - Bao , et al.
2019-06-04
Field effect transistor stack with tunable work function
Grant 10,249,543 - Bao , et al.
2019-04-02
Shared metal gate stack with tunable work function
Grant 10,243,055 - Bao , et al.
2019-03-26
Modified tungsten silicon
Grant 10,192,822 - Ferrer , et al. Ja
2019-01-29
Shared Metal Gate Stack With Tunable Work Function
App 20190027572 - Bao; Ruqiang ;   et al.
2019-01-24
Field Effect Transistor Gate Stack
App 20180330996 - Bao; Ruqiang ;   et al.
2018-11-15
Field effect transistor gate stack
Grant 10,079,182 - Bao , et al. September 18, 2
2018-09-18
Integrated circuit with replacement gate stacks and method of forming same
Grant 10,074,574 - Bao , et al. September 11, 2
2018-09-11
Shared Metal Gate Stack With Tunable Work Function
App 20180190784 - Bao; Ruqiang ;   et al.
2018-07-05
Shared metal gate stack with tunable work function
Grant 10,002,937 - Bao , et al. June 19, 2
2018-06-19
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor
Grant 9,960,233 - Krishnan , et al. May 1, 2
2018-05-01
Integrated Circuit With Replacement Gate Stacks And Method Of Forming Same
App 20180102294 - Bao; Ruqiang ;   et al.
2018-04-12
Integrated Circuit With Replacement Gate Stacks And Method Of Forming Same
App 20180096900 - Bao; Ruqiang ;   et al.
2018-04-05
Integrated circuit with replacement gate stacks and method of forming same
Grant 9,922,884 - Bao , et al. March 20, 2
2018-03-20
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs
Grant 9,905,476 - Bao , et al. February 27, 2
2018-02-27
Field Effect Transistor Stack With Tunable Work Function
App 20180047639 - Bao; Ruqiang ;   et al.
2018-02-15
Field Effect Transistor Stack With Tunable Work Function
App 20180047640 - Bao; Ruqiang ;   et al.
2018-02-15
Field effect transistor stack with tunable work function
Grant 9,859,169 - Bao , et al. January 2, 2
2018-01-02
Shared Metal Gate Stack With Tunable Work Function
App 20170358655 - Bao; Ruqiang ;   et al.
2017-12-14
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
Grant 9,824,930 - Ando , et al. November 21, 2
2017-11-21
Semiconductor device having a gate stack with tunable work function
Grant 9,799,656 - Bao , et al. October 24, 2
2017-10-24
Method to form dual tin layers as pFET work metal stack
Grant 9,768,171 - Bao , et al. September 19, 2
2017-09-19
Expitaxially Regrown Heterostructure Nanowire Lateral Tunnel Field Effect Transistor
App 20170263707 - Krishnan; Siddarth A. ;   et al.
2017-09-14
Integrated Circuit Having Improved Electromigration Performance And Method Of Forming Same
App 20170236780 - Nag; Joyeeta ;   et al.
2017-08-17
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
Grant 9,721,842 - Ando , et al. August 1, 2
2017-08-01
Field Effect Transistor Stack With Tunable Work Function
App 20170207131 - Bao; Ruqiang ;   et al.
2017-07-20
Field Effect Transistor Gate Stack
App 20170207132 - Bao; Ruqiang ;   et al.
2017-07-20
Structures With Thinned Dielectric Material
App 20170207134 - BAO; Ruqiang ;   et al.
2017-07-20
Semiconductor Device Having A Gate Stack With Tunable Work Function
App 20170207219 - Bao; Ruqiang ;   et al.
2017-07-20
Forming a semiconductor structure for reduced negative bias temperature instability
Grant 9,704,758 - Bao , et al. July 11, 2
2017-07-11
Field effect transistors having multiple effective work functions
Grant 9,691,662 - Ando , et al. June 27, 2
2017-06-27
Method To Form Dual Tin Layers As Pfet Work Metal Stack
App 20170179125 - Bao; Ruqiang ;   et al.
2017-06-22
Integrated circuit having improved electromigration performance and method of forming same
Grant 9,679,810 - Nag , et al. June 13, 2
2017-06-13
Forming A Semiconductor Structure For Reduced Negative Bias Temperature Instability
App 20170148686 - Bao; Ruqiang ;   et al.
2017-05-25
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor
Grant 9,660,027 - Krishnan , et al. May 23, 2
2017-05-23
ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNING FOR HIGH PERFORMANCE CMOS FinFETs
App 20170133278 - Bao; Ruqiang ;   et al.
2017-05-11
Integrated Circuit With Replacement Gate Stacks And Method Of Forming Same
App 20170110375 - Bao; Ruqiang ;   et al.
2017-04-20
Structures With Thinned Dielectric Material
App 20170110376 - BAO; Ruqiang ;   et al.
2017-04-20
Expitaxially Regrown Heterostructure Nanowire Lateral Tunnel Field Effect Transistor
App 20170110539 - Krishnan; Siddarth A. ;   et al.
2017-04-20
Replacement channel TFET
Grant 9,627,508 - Chudzik , et al. April 18, 2
2017-04-18
Gate stack with tunable work function
Grant 9,583,400 - Bao , et al. February 28, 2
2017-02-28
Forming a semiconductor structure for reduced negative bias temperature instability
Grant 9,576,958 - Bao , et al. February 21, 2
2017-02-21
Field Effect Transistors Having Multiple Effective Work Functions
App 20170047255 - Ando; Takashi ;   et al.
2017-02-16
Semiconductor device having a gate stack with tunable work function
Grant 9,559,016 - Bao , et al. January 31, 2
2017-01-31
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs
Grant 9,553,092 - Bao , et al. January 24, 2
2017-01-24
Method and structure for III-V nanowire tunnel FETs
Grant 9,548,381 - Krishnan , et al. January 17, 2
2017-01-17
ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNING FOR HIGH PERFORMANCE CMOS FinFETs
App 20160365347 - Bao; Ruqiang ;   et al.
2016-12-15
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160351452 - Ando; Takashi ;   et al.
2016-12-01
Forming a semiconductor structure for reduced negative bias temperature instability
Grant 9,502,307 - Bao , et al. November 22, 2
2016-11-22
Field effect transistors having multiple effective work functions
Grant 9,484,427 - Ando , et al. November 1, 2
2016-11-01
Replacement Channel Tfet
App 20160308025 - Chudzik; Michael P. ;   et al.
2016-10-20
Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme
Grant 9,472,419 - Ando , et al. October 18, 2
2016-10-18
Modified Tungsten Silicon
App 20160240478 - Ferrer; Domingo A. ;   et al.
2016-08-18
Constrained nanosecond laser anneal of metal interconnect structures
Grant 9,412,658 - Gluschenkov , et al. August 9, 2
2016-08-09
Variable length multi-channel replacement metal gate including silicon hard mask
Grant 9,397,177 - Chudzik , et al. July 19, 2
2016-07-19
Methods of forming multi-Vt III-V TFET devices
Grant 9,397,199 - Kwon , et al. July 19, 2
2016-07-19
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160190015 - Ando; Takashi ;   et al.
2016-06-30
Variable length multi-channel replacement metal gate including silicon hard mask
Grant 9,373,690 - Chudzik , et al. June 21, 2
2016-06-21
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
Grant 9,330,938 - Ando , et al. May 3, 2
2016-05-03
Non-volatile memory structure employing high-k gate dielectric and metal gate
Grant 9,318,336 - Breil , et al. April 19, 2
2016-04-19
Constrained Nanosecond Laser Anneal Of Metal Interconnect Structures
App 20160086849 - Gluschenkov; Oleg ;   et al.
2016-03-24
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160049337 - Ando; Takashi ;   et al.
2016-02-18
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160027664 - Ando; Takashi ;   et al.
2016-01-28
Field Effect Transistors Having Multiple Effective Work Functions
App 20160005831 - Ando; Takashi ;   et al.
2016-01-07
Variable Length Multi-channel Replacement Metal Gate Including Silicon Hard Mask
App 20150349076 - Chudzik; Michael P. ;   et al.
2015-12-03
Non-volatile memory structure employing high-k gate dielectric and metal gate
Grant 9,099,394 - Breil , et al. August 4, 2
2015-08-04
Semiconductor devices having different gate oxide thicknesses
Grant 9,087,722 - Adams , et al. July 21, 2
2015-07-21
Structure and method of T.sub.inv scaling for high k metal gate technology
Grant 9,087,784 - Chudzik , et al. July 21, 2
2015-07-21
Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
Grant 9,087,927 - Chudzik , et al. July 21, 2
2015-07-21
Concurrently forming nFET and pFET gate dielectric layers
Grant 9,059,315 - Ando , et al. June 16, 2
2015-06-16
Variable Length Multi-channel Replacement Metal Gate Including Silicon Hard Mask
App 20150145062 - Chudzik; Michael P. ;   et al.
2015-05-28
Structure and method of T.sub.inv scaling for high k metal gate technology
Grant 9,006,837 - Chudzik , et al. April 14, 2
2015-04-14
Semiconductor Devices Having Different Gate Oxide Thicknesses
App 20150069525 - Adams; Charlotte D. ;   et al.
2015-03-12
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches
App 20150044853 - Chudzik; Michael P. ;   et al.
2015-02-12
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
Grant 8,952,460 - Brodsky , et al. February 10, 2
2015-02-10
Semiconductor devices having different gate oxide thicknesses
Grant 8,941,177 - Adams , et al. January 27, 2
2015-01-27
FIN Field Effect Transistors Having Multiple Threshold Voltages
App 20150021699 - Ando; Takashi ;   et al.
2015-01-22
Intrinsic Channel Planar Field Effect Transistors Having Multiple Threshold Voltages
App 20150021698 - Ando; Takashi ;   et al.
2015-01-22
Replacement metal gate structures providing independent control on work function and gate leakage current
Grant 8,912,607 - Kwon , et al. December 16, 2
2014-12-16
Thermally stable high-K tetragonal HFO.sub.2 layer within high aspect ratio deep trenches
Grant 8,901,706 - Chudzik , et al. December 2, 2
2014-12-02
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
Grant 8,809,152 - Brodsky , et al. August 19, 2
2014-08-19
Replacement gate with reduced gate leakage current
Grant 8,809,176 - Ando , et al. August 19, 2
2014-08-19
Concurrently Forming nFET and pFET Gate Dielectric Layers
App 20140187028 - Ando; Takashi ;   et al.
2014-07-03
Etch stop layer formation in metal gate process
Grant 8,759,172 - Li , et al. June 24, 2
2014-06-24
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY
App 20140170844 - Chudzik; Michael P. ;   et al.
2014-06-19
Germanium Oxide Free Atomic Layer Deposition Of Silicon Oxide And High-k Gate Dielectric On Germanium Containing Channel For Cmos Devices
App 20140061819 - Brodsky; MaryJane ;   et al.
2014-03-06
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate
App 20140057426 - Breil; Nicolas ;   et al.
2014-02-27
Structure and method of T.sub.inv scaling for high .kappa. metal gate technology
Grant 8,643,115 - Chudzik , et al. February 4, 2
2014-02-04
Semiconductor Devices Having Different Gate Oxide Thicknesses
App 20140001575 - Adams; Charlotte DeWan ;   et al.
2014-01-02
Insulating layers on different semiconductor materials
Grant 8,592,325 - Shepard, Jr. , et al. November 26, 2
2013-11-26
Replacement gate with reduced gate leakage current
Grant 8,581,351 - Ando , et al. November 12, 2
2013-11-12
High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof
Grant 8,575,709 - Bu , et al. November 5, 2
2013-11-05
Etch Stop Layer Formation In Metal Gate Process
App 20130277767 - Li; Zhengwen ;   et al.
2013-10-24
Etch Stop Layer Formation In Metal Gate Process
App 20130277764 - Li; Zhengwen ;   et al.
2013-10-24
Replacement Gate With Reduced Gate Leakage Current
App 20130217219 - Ando; Takashi ;   et al.
2013-08-22
Replacement Metal Gate Structures Providing Independent Control On Work Function And Gate Leakage Current
App 20130193522 - Kwon; Unoh ;   et al.
2013-08-01
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY
App 20130187239 - Chudzik; Michael P. ;   et al.
2013-07-25
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches
App 20130175665 - Chudzik; Michael P. ;   et al.
2013-07-11
Replacement metal gate structures providing independent control on work function and gate leakage current
Grant 8,450,169 - Kwon , et al. May 28, 2
2013-05-28
Germanium Oxide Free Atomic Layer Deposition Of Silicon Oxide And High-k Gate Dielectric On Germanium Containing Channel For Cmos Devices
App 20130126986 - Brodsky; MaryJane ;   et al.
2013-05-23
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate
App 20130105879 - Breil; Nicolas ;   et al.
2013-05-02
Replacement gate devices with barrier metal for simultaneous processing
Grant 8,420,473 - Ando , et al. April 16, 2
2013-04-16
Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures
Grant 8,354,313 - Kwon , et al. January 15, 2
2013-01-15
High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof
Grant 8,318,565 - Bu , et al. November 27, 2
2012-11-27
High-k Dielectric Gate Structures Resistant To Oxide Growth At The Dielectric/silicon Substrate Interface And Methods Of Manufacture Thereof
App 20120286374 - Bu; Huiming ;   et al.
2012-11-15
Insulating Layers On Different Semiconductor Materials
App 20120187453 - Shepard, JR.; Joseph F. ;   et al.
2012-07-26
Replacement Gate With Reduced Gate Leakage Current
App 20120181630 - Ando; Takashi ;   et al.
2012-07-19
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY
App 20120181616 - Chudzik; Michael P. ;   et al.
2012-07-19
Replacement Gate Devices With Barrier Metal For Simultaneous Processing
App 20120139053 - Ando; Takashi ;   et al.
2012-06-07
Replacement Metal Gate Structures Providing Independent Control On Work Function and Gate Leakage Current
App 20120132998 - Kwon; Unoh ;   et al.
2012-05-31
Gate effective-workfunction modification for CMOS
Grant 8,183,642 - Park , et al. May 22, 2
2012-05-22
Trench Capacitor And Method Of Fabrication
App 20110298089 - Krishnan; Rishikesh ;   et al.
2011-12-08
Method To Optimize Work Function In Complementary Metal Oxide Semiconductor (cmos) Structures
App 20110269276 - Kwon; Unoh ;   et al.
2011-11-03
High-k Dielectric Gate Structures Resistant To Oxide Growth At The Dielectric/silicon Substrate Interface And Methods Of Manufacture Thereof
App 20110221012 - Bu; Huiming ;   et al.
2011-09-15
Insulating Layers On Different Semiconductor Materials
App 20110169141 - Shepard, JR.; Joseph F. ;   et al.
2011-07-14
Gate Effective-Workfunction Modification for CMOS
App 20110121401 - Park; Dae-Gyu ;   et al.
2011-05-26
Gate effective-workfunction modification for CMOS
Grant 7,947,549 - Park , et al. May 24, 2
2011-05-24
Semiconductor device having dual metal gates and method of manufacture
Grant 7,838,908 - Kwon , et al. November 23, 2
2010-11-23
Method And Structure For Threshold Voltage Control And Drive Current Improvement For High-k Metal Gate Transistors
App 20100244206 - Bu; Huiming ;   et al.
2010-09-30
Semiconductor Device Having Dual Metal Gates And Method Of Manufacture
App 20100187610 - Kwon; Unoh ;   et al.
2010-07-29
Method of forming gate stack and structure thereof
Grant 7,691,701 - Belyansky , et al. April 6, 2
2010-04-06
Gate Effective-Workfunction Modification for CMOS
App 20090212369 - Park; Dae-Gyu ;   et al.
2009-08-27
Nitrogen based plasma process for metal gate MOS device
Grant 7,498,271 - Donaton , et al. March 3, 2
2009-03-03

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