Patent | Date |
---|
Gate Oxide For Nanosheet Transistor Devices App 20220069104 - Siddiqui; Shahab ;   et al. | 2022-03-03 |
Gate oxide for nanosheet transistor devices Grant 11,211,474 - Siddiqui , et al. December 28, 2 | 2021-12-28 |
Precise Bottom Junction Formation For Vertical Transport Field Effect Transistor With Highly Doped Epitaxial Source/drain, Sharp Junction Gradient, And/or Reduced Parasitic Capacitance App 20210391473 - Zhao; Kai ;   et al. | 2021-12-16 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth Grant 11,081,583 - Harley , et al. August 3, 2 | 2021-08-03 |
Gate Oxide For Nanosheet Transistor Devices App 20210217873 - Siddiqui; Shahab ;   et al. | 2021-07-15 |
Device with highly active acceptor doping and method of production thereof Grant 10,886,178 - Lee , et al. January 5, 2 | 2021-01-05 |
Fin structures Grant 10,790,198 - Al-Amoody , et al. September 29, 2 | 2020-09-29 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth Grant 10,615,279 - Harley , et al. | 2020-04-07 |
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth App 20200066908 - HARLEY; ERIC C. ;   et al. | 2020-02-27 |
Device With Highly Active Acceptor Doping And Method Of Production Thereof App 20200066593 - LEE; Tek Po Rinus ;   et al. | 2020-02-27 |
Fin Structures App 20200051867 - AL-AMOODY; Fuad H. ;   et al. | 2020-02-13 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth Grant 10,243,077 - Harley , et al. | 2019-03-26 |
Microwave annealing of flowable oxides with trap layers Grant 10,211,045 - Krishnan , et al. Feb | 2019-02-19 |
Shallow Trench Isolation (sti) Gap Fill App 20190027556 - Shu; Jiehui ;   et al. | 2019-01-24 |
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth App 20180097113 - HARLEY; ERIC C. ;   et al. | 2018-04-05 |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth Grant 9,917,190 - Harley , et al. March 13, 2 | 2018-03-13 |
Trench metal insulator metal capacitor with oxygen gettering layer Grant 9,911,597 - Ando , et al. March 6, 2 | 2018-03-06 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide Grant 9,831,084 - Ando , et al. November 28, 2 | 2017-11-28 |
Trench Metal Insulator Metal Capacitor With Oxygen Gettering Layer App 20170250073 - Ando; Takashi ;   et al. | 2017-08-31 |
Trench metal-insulator-metal capacitor with oxygen gettering layer Grant 9,653,534 - Ando , et al. May 16, 2 | 2017-05-16 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods Grant 9,653,535 - Breil , et al. May 16, 2 | 2017-05-16 |
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions Grant 9,577,100 - Cheng , et al. February 21, 2 | 2017-02-21 |
Epitaxial growth of material on source/drain regions of FinFET structure Grant 9,536,985 - Chudzik , et al. January 3, 2 | 2017-01-03 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods Grant 9,496,329 - Breil , et al. November 15, 2 | 2016-11-15 |
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth App 20160197186 - HARLEY; ERIC C. ;   et al. | 2016-07-07 |
Trench Metal-insulator-metal Capacitor With Oxygen Gettering Layer App 20160181353 - Ando; Takashi ;   et al. | 2016-06-23 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide Grant 9,373,501 - Ando , et al. June 21, 2 | 2016-06-21 |
Die level chemical mechanical polishing Grant 9,373,524 - Krishnan , et al. June 21, 2 | 2016-06-21 |
Non-volatile memory structure employing high-k gate dielectric and metal gate Grant 9,318,336 - Breil , et al. April 19, 2 | 2016-04-19 |
finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth Grant 9,312,364 - Harley , et al. April 12, 2 | 2016-04-12 |
Epitaxial Growth Of Material On Source/drain Regions Of Finfet Structure App 20160093720 - Chudzik; Michael P. ;   et al. | 2016-03-31 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods Grant 9,299,766 - Breil , et al. March 29, 2 | 2016-03-29 |
Wafer stress control with backside patterning Grant 9,269,607 - Engbrecht , et al. February 23, 2 | 2016-02-23 |
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth App 20160035878 - HARLEY; ERIC C. ;   et al. | 2016-02-04 |
Hydroxyl Group Termination For Nucleation Of A Dielectric Metallic Oxide App 20160027640 - Ando; Takashi ;   et al. | 2016-01-28 |
Die Level Chemical Mechanical Polishing App 20150371870 - Krishnan; Rishikesh ;   et al. | 2015-12-24 |
Wafer Stress Control With Backside Patterning App 20150364362 - Engbrecht; Edward ;   et al. | 2015-12-17 |
Finfet And Nanowire Semiconductor Devices With Suspended Channel Regions And Gate Structures Surrounding The Suspended Channel Regions App 20150364603 - Cheng; Kangguo ;   et al. | 2015-12-17 |
Dt Capacitor With Silicide Outer Electrode And/or Compressive Stress Layer, And Related Methods App 20150357403 - Breil; Nicolas L. ;   et al. | 2015-12-10 |
Dt Capacitor With Silicide Outer Electrode And/or Compressive Stress Layer, And Related Methods App 20150357402 - Breil; Nicolas L. ;   et al. | 2015-12-10 |
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth App 20150349093 - Harley; ERIC C. ;   et al. | 2015-12-03 |
Die Level Chemical Mechanical Polishing App 20150311088 - Krishnan; Rishikesh ;   et al. | 2015-10-29 |
Dt Capacitor With Silicide Outer Electrode And/or Compressive Stress Layer, And Related Methods App 20150279925 - Breil; Nicolas L. ;   et al. | 2015-10-01 |
Single-crystal Source-drain Merged By Polycrystalline Material App 20150270332 - Harley; Eric C. ;   et al. | 2015-09-24 |
Single crystal source-drain merged by polycrystalline material Grant 9,123,826 - Harley , et al. September 1, 2 | 2015-09-01 |
Non-volatile memory structure employing high-k gate dielectric and metal gate Grant 9,099,394 - Breil , et al. August 4, 2 | 2015-08-04 |
Structure And Process To Decouple Deep Trench Capacitors And Well Isolation App 20150214244 - Ho; Herbert L. ;   et al. | 2015-07-30 |
Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches Grant 9,087,927 - Chudzik , et al. July 21, 2 | 2015-07-21 |
Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials Grant 8,993,044 - Krishnan , et al. March 31, 2 | 2015-03-31 |
Electrical components for microelectronic devices and methods of forming the same Grant 8,987,863 - Krishnan , et al. March 24, 2 | 2015-03-24 |
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches App 20150044853 - Chudzik; Michael P. ;   et al. | 2015-02-12 |
Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials App 20150001674 - Krishnan; Rishikesh ;   et al. | 2015-01-01 |
Thermally stable high-K tetragonal HFO.sub.2 layer within high aspect ratio deep trenches Grant 8,901,706 - Chudzik , et al. December 2, 2 | 2014-12-02 |
Hydroxyl Group Termination For Nucleation Of A Dielectric Metallic Oxide App 20140308821 - Ando; Takashi ;   et al. | 2014-10-16 |
Capacitors having dielectric regions that include multiple metal oxide-comprising materials Grant 8,861,179 - Krishnan , et al. October 14, 2 | 2014-10-14 |
Replacement gate with reduced gate leakage current Grant 8,809,176 - Ando , et al. August 19, 2 | 2014-08-19 |
Deposition Of Pure Metals In 3d Structures App 20140183051 - Chudzik; Michael P. ;   et al. | 2014-07-03 |
Shallow trench isolation for device including deep trench capacitors Grant 8,679,938 - Fang , et al. March 25, 2 | 2014-03-25 |
Methods of making crystalline tantalum pentoxide Grant 8,673,390 - Bhat , et al. March 18, 2 | 2014-03-18 |
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate App 20140057426 - Breil; Nicolas ;   et al. | 2014-02-27 |
Insulating layers on different semiconductor materials Grant 8,592,325 - Shepard, Jr. , et al. November 26, 2 | 2013-11-26 |
Replacement gate with reduced gate leakage current Grant 8,581,351 - Ando , et al. November 12, 2 | 2013-11-12 |
Electrical Components For Microelectronic Devices And Methods Of Forming The Same App 20130258550 - Krishnan; Rishikesh ;   et al. | 2013-10-03 |
Replacement Gate With Reduced Gate Leakage Current App 20130217219 - Ando; Takashi ;   et al. | 2013-08-22 |
Shallow Trench Isolation For Device Including Deep Trench Capacitors App 20130200482 - FANG; Sunfei ;   et al. | 2013-08-08 |
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches App 20130175665 - Chudzik; Michael P. ;   et al. | 2013-07-11 |
Electrical components for microelectronic devices and methods of forming the same Grant 8,450,173 - Krishnan , et al. May 28, 2 | 2013-05-28 |
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate App 20130105879 - Breil; Nicolas ;   et al. | 2013-05-02 |
Methods of Making Crystalline Tantalum Pentoxide App 20130011990 - Bhat; Vishwanath ;   et al. | 2013-01-10 |
Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials App 20120320494 - Krishnan; Rishikesh ;   et al. | 2012-12-20 |
Capacitors having dielectric regions that include multiple metal oxide-comprising materials Grant 8,310,807 - Krishnan , et al. November 13, 2 | 2012-11-13 |
Methods of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials App 20120282754 - Krishnan; Rishikesh ;   et al. | 2012-11-08 |
Methods of making crystalline tantalum pentoxide Grant 8,282,988 - Bhat , et al. October 9, 2 | 2012-10-09 |
Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor Grant 8,241,981 - Krishnan , et al. August 14, 2 | 2012-08-14 |
Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials Grant 8,236,372 - Krishnan , et al. August 7, 2 | 2012-08-07 |
Method Of Fabricating A Deep Trench (dt) Metal-insulator-metal (mim) Capacitor App 20120196424 - Krishnan; Rishikesh ;   et al. | 2012-08-02 |
Insulating Layers On Different Semiconductor Materials App 20120187453 - Shepard, JR.; Joseph F. ;   et al. | 2012-07-26 |
Replacement Gate With Reduced Gate Leakage Current App 20120181630 - Ando; Takashi ;   et al. | 2012-07-19 |
Trench Capacitor And Method Of Fabrication App 20110298089 - Krishnan; Rishikesh ;   et al. | 2011-12-08 |
Methods of Making Crystalline Tantalum Pentoxide App 20110300721 - Bhat; Vishwanath ;   et al. | 2011-12-08 |
Electrical Components For Microelectronic Devices And Methods Of Forming The Same App 20110254129 - Krishnan; Rishikesh ;   et al. | 2011-10-20 |
Methods of making crystalline tantalum pentoxide Grant 8,012,532 - Bhat , et al. September 6, 2 | 2011-09-06 |
Insulating Layers On Different Semiconductor Materials App 20110169141 - Shepard, JR.; Joseph F. ;   et al. | 2011-07-14 |
Electrical components for microelectronic devices Grant 7,968,969 - Krishnan , et al. June 28, 2 | 2011-06-28 |
Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials App 20100315760 - Krishnan; Rishikesh ;   et al. | 2010-12-16 |
Methods Of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials App 20100316793 - Krishnan; Rishikesh ;   et al. | 2010-12-16 |
Electrical Components For Microelectronic Devices And Methods Of Forming The Same App 20090273058 - Krishnan; Rishikesh ;   et al. | 2009-11-05 |
Electrical components for microelectronic devices and methods of forming the same Grant 7,560,392 - Krishnan , et al. July 14, 2 | 2009-07-14 |
Methods Of Making Crystalline Tantalum Pentoxide App 20090155486 - Bhat; Vishwanath ;   et al. | 2009-06-18 |
Electrical components for microelectronic devices and methods of forming the same App 20070264838 - Krishnan; Rishikesh ;   et al. | 2007-11-15 |