loadpatents
name:-0.056149005889893
name:-0.057491064071655
name:-0.0098910331726074
Krishnan; Rishikesh Patent Filings

Krishnan; Rishikesh

Patent Applications and Registrations

Patent applications and USPTO patent grants for Krishnan; Rishikesh.The latest application filed is for "gate oxide for nanosheet transistor devices".

Company Profile
8.50.52
  • Krishnan; Rishikesh - Cohoes NY
  • Krishnan; Rishikesh - Poughkeepsie NY
  • Krishnan; Rishikesh - Painted Post NY
  • Krishnan; Rishikesh - Boise ID
  • Krishnan; Rishikesh - Hopewell Junction NY US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Gate Oxide For Nanosheet Transistor Devices
App 20220069104 - Siddiqui; Shahab ;   et al.
2022-03-03
Gate oxide for nanosheet transistor devices
Grant 11,211,474 - Siddiqui , et al. December 28, 2
2021-12-28
Precise Bottom Junction Formation For Vertical Transport Field Effect Transistor With Highly Doped Epitaxial Source/drain, Sharp Junction Gradient, And/or Reduced Parasitic Capacitance
App 20210391473 - Zhao; Kai ;   et al.
2021-12-16
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
Grant 11,081,583 - Harley , et al. August 3, 2
2021-08-03
Gate Oxide For Nanosheet Transistor Devices
App 20210217873 - Siddiqui; Shahab ;   et al.
2021-07-15
Device with highly active acceptor doping and method of production thereof
Grant 10,886,178 - Lee , et al. January 5, 2
2021-01-05
Fin structures
Grant 10,790,198 - Al-Amoody , et al. September 29, 2
2020-09-29
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
Grant 10,615,279 - Harley , et al.
2020-04-07
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth
App 20200066908 - HARLEY; ERIC C. ;   et al.
2020-02-27
Device With Highly Active Acceptor Doping And Method Of Production Thereof
App 20200066593 - LEE; Tek Po Rinus ;   et al.
2020-02-27
Fin Structures
App 20200051867 - AL-AMOODY; Fuad H. ;   et al.
2020-02-13
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
Grant 10,243,077 - Harley , et al.
2019-03-26
Microwave annealing of flowable oxides with trap layers
Grant 10,211,045 - Krishnan , et al. Feb
2019-02-19
Shallow Trench Isolation (sti) Gap Fill
App 20190027556 - Shu; Jiehui ;   et al.
2019-01-24
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth
App 20180097113 - HARLEY; ERIC C. ;   et al.
2018-04-05
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
Grant 9,917,190 - Harley , et al. March 13, 2
2018-03-13
Trench metal insulator metal capacitor with oxygen gettering layer
Grant 9,911,597 - Ando , et al. March 6, 2
2018-03-06
Hydroxyl group termination for nucleation of a dielectric metallic oxide
Grant 9,831,084 - Ando , et al. November 28, 2
2017-11-28
Trench Metal Insulator Metal Capacitor With Oxygen Gettering Layer
App 20170250073 - Ando; Takashi ;   et al.
2017-08-31
Trench metal-insulator-metal capacitor with oxygen gettering layer
Grant 9,653,534 - Ando , et al. May 16, 2
2017-05-16
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
Grant 9,653,535 - Breil , et al. May 16, 2
2017-05-16
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions
Grant 9,577,100 - Cheng , et al. February 21, 2
2017-02-21
Epitaxial growth of material on source/drain regions of FinFET structure
Grant 9,536,985 - Chudzik , et al. January 3, 2
2017-01-03
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
Grant 9,496,329 - Breil , et al. November 15, 2
2016-11-15
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth
App 20160197186 - HARLEY; ERIC C. ;   et al.
2016-07-07
Trench Metal-insulator-metal Capacitor With Oxygen Gettering Layer
App 20160181353 - Ando; Takashi ;   et al.
2016-06-23
Hydroxyl group termination for nucleation of a dielectric metallic oxide
Grant 9,373,501 - Ando , et al. June 21, 2
2016-06-21
Die level chemical mechanical polishing
Grant 9,373,524 - Krishnan , et al. June 21, 2
2016-06-21
Non-volatile memory structure employing high-k gate dielectric and metal gate
Grant 9,318,336 - Breil , et al. April 19, 2
2016-04-19
finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
Grant 9,312,364 - Harley , et al. April 12, 2
2016-04-12
Epitaxial Growth Of Material On Source/drain Regions Of Finfet Structure
App 20160093720 - Chudzik; Michael P. ;   et al.
2016-03-31
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
Grant 9,299,766 - Breil , et al. March 29, 2
2016-03-29
Wafer stress control with backside patterning
Grant 9,269,607 - Engbrecht , et al. February 23, 2
2016-02-23
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth
App 20160035878 - HARLEY; ERIC C. ;   et al.
2016-02-04
Hydroxyl Group Termination For Nucleation Of A Dielectric Metallic Oxide
App 20160027640 - Ando; Takashi ;   et al.
2016-01-28
Die Level Chemical Mechanical Polishing
App 20150371870 - Krishnan; Rishikesh ;   et al.
2015-12-24
Wafer Stress Control With Backside Patterning
App 20150364362 - Engbrecht; Edward ;   et al.
2015-12-17
Finfet And Nanowire Semiconductor Devices With Suspended Channel Regions And Gate Structures Surrounding The Suspended Channel Regions
App 20150364603 - Cheng; Kangguo ;   et al.
2015-12-17
Dt Capacitor With Silicide Outer Electrode And/or Compressive Stress Layer, And Related Methods
App 20150357403 - Breil; Nicolas L. ;   et al.
2015-12-10
Dt Capacitor With Silicide Outer Electrode And/or Compressive Stress Layer, And Related Methods
App 20150357402 - Breil; Nicolas L. ;   et al.
2015-12-10
Finfet With Dielectric Isolation After Gate Module For Improved Source And Drain Region Epitaxial Growth
App 20150349093 - Harley; ERIC C. ;   et al.
2015-12-03
Die Level Chemical Mechanical Polishing
App 20150311088 - Krishnan; Rishikesh ;   et al.
2015-10-29
Dt Capacitor With Silicide Outer Electrode And/or Compressive Stress Layer, And Related Methods
App 20150279925 - Breil; Nicolas L. ;   et al.
2015-10-01
Single-crystal Source-drain Merged By Polycrystalline Material
App 20150270332 - Harley; Eric C. ;   et al.
2015-09-24
Single crystal source-drain merged by polycrystalline material
Grant 9,123,826 - Harley , et al. September 1, 2
2015-09-01
Non-volatile memory structure employing high-k gate dielectric and metal gate
Grant 9,099,394 - Breil , et al. August 4, 2
2015-08-04
Structure And Process To Decouple Deep Trench Capacitors And Well Isolation
App 20150214244 - Ho; Herbert L. ;   et al.
2015-07-30
Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
Grant 9,087,927 - Chudzik , et al. July 21, 2
2015-07-21
Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
Grant 8,993,044 - Krishnan , et al. March 31, 2
2015-03-31
Electrical components for microelectronic devices and methods of forming the same
Grant 8,987,863 - Krishnan , et al. March 24, 2
2015-03-24
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches
App 20150044853 - Chudzik; Michael P. ;   et al.
2015-02-12
Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials
App 20150001674 - Krishnan; Rishikesh ;   et al.
2015-01-01
Thermally stable high-K tetragonal HFO.sub.2 layer within high aspect ratio deep trenches
Grant 8,901,706 - Chudzik , et al. December 2, 2
2014-12-02
Hydroxyl Group Termination For Nucleation Of A Dielectric Metallic Oxide
App 20140308821 - Ando; Takashi ;   et al.
2014-10-16
Capacitors having dielectric regions that include multiple metal oxide-comprising materials
Grant 8,861,179 - Krishnan , et al. October 14, 2
2014-10-14
Replacement gate with reduced gate leakage current
Grant 8,809,176 - Ando , et al. August 19, 2
2014-08-19
Deposition Of Pure Metals In 3d Structures
App 20140183051 - Chudzik; Michael P. ;   et al.
2014-07-03
Shallow trench isolation for device including deep trench capacitors
Grant 8,679,938 - Fang , et al. March 25, 2
2014-03-25
Methods of making crystalline tantalum pentoxide
Grant 8,673,390 - Bhat , et al. March 18, 2
2014-03-18
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate
App 20140057426 - Breil; Nicolas ;   et al.
2014-02-27
Insulating layers on different semiconductor materials
Grant 8,592,325 - Shepard, Jr. , et al. November 26, 2
2013-11-26
Replacement gate with reduced gate leakage current
Grant 8,581,351 - Ando , et al. November 12, 2
2013-11-12
Electrical Components For Microelectronic Devices And Methods Of Forming The Same
App 20130258550 - Krishnan; Rishikesh ;   et al.
2013-10-03
Replacement Gate With Reduced Gate Leakage Current
App 20130217219 - Ando; Takashi ;   et al.
2013-08-22
Shallow Trench Isolation For Device Including Deep Trench Capacitors
App 20130200482 - FANG; Sunfei ;   et al.
2013-08-08
Thermally Stable High-k Tetragonal Hfo2 Layer Within High Aspect Ratio Deep Trenches
App 20130175665 - Chudzik; Michael P. ;   et al.
2013-07-11
Electrical components for microelectronic devices and methods of forming the same
Grant 8,450,173 - Krishnan , et al. May 28, 2
2013-05-28
Non-volatile Memory Structure Employing High-k Gate Dielectric And Metal Gate
App 20130105879 - Breil; Nicolas ;   et al.
2013-05-02
Methods of Making Crystalline Tantalum Pentoxide
App 20130011990 - Bhat; Vishwanath ;   et al.
2013-01-10
Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
App 20120320494 - Krishnan; Rishikesh ;   et al.
2012-12-20
Capacitors having dielectric regions that include multiple metal oxide-comprising materials
Grant 8,310,807 - Krishnan , et al. November 13, 2
2012-11-13
Methods of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
App 20120282754 - Krishnan; Rishikesh ;   et al.
2012-11-08
Methods of making crystalline tantalum pentoxide
Grant 8,282,988 - Bhat , et al. October 9, 2
2012-10-09
Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor
Grant 8,241,981 - Krishnan , et al. August 14, 2
2012-08-14
Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
Grant 8,236,372 - Krishnan , et al. August 7, 2
2012-08-07
Method Of Fabricating A Deep Trench (dt) Metal-insulator-metal (mim) Capacitor
App 20120196424 - Krishnan; Rishikesh ;   et al.
2012-08-02
Insulating Layers On Different Semiconductor Materials
App 20120187453 - Shepard, JR.; Joseph F. ;   et al.
2012-07-26
Replacement Gate With Reduced Gate Leakage Current
App 20120181630 - Ando; Takashi ;   et al.
2012-07-19
Trench Capacitor And Method Of Fabrication
App 20110298089 - Krishnan; Rishikesh ;   et al.
2011-12-08
Methods of Making Crystalline Tantalum Pentoxide
App 20110300721 - Bhat; Vishwanath ;   et al.
2011-12-08
Electrical Components For Microelectronic Devices And Methods Of Forming The Same
App 20110254129 - Krishnan; Rishikesh ;   et al.
2011-10-20
Methods of making crystalline tantalum pentoxide
Grant 8,012,532 - Bhat , et al. September 6, 2
2011-09-06
Insulating Layers On Different Semiconductor Materials
App 20110169141 - Shepard, JR.; Joseph F. ;   et al.
2011-07-14
Electrical components for microelectronic devices
Grant 7,968,969 - Krishnan , et al. June 28, 2
2011-06-28
Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
App 20100315760 - Krishnan; Rishikesh ;   et al.
2010-12-16
Methods Of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
App 20100316793 - Krishnan; Rishikesh ;   et al.
2010-12-16
Electrical Components For Microelectronic Devices And Methods Of Forming The Same
App 20090273058 - Krishnan; Rishikesh ;   et al.
2009-11-05
Electrical components for microelectronic devices and methods of forming the same
Grant 7,560,392 - Krishnan , et al. July 14, 2
2009-07-14
Methods Of Making Crystalline Tantalum Pentoxide
App 20090155486 - Bhat; Vishwanath ;   et al.
2009-06-18
Electrical components for microelectronic devices and methods of forming the same
App 20070264838 - Krishnan; Rishikesh ;   et al.
2007-11-15

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