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Patent applications and USPTO patent grants for Krishnamohan; Tejas.The latest application filed is for "in-field block retiring".
Patent | Date |
---|---|
In-field block retiring Grant 8,767,467 - Parat , et al. July 1, 2 | 2014-07-01 |
In-field Block Retiring App 20130332769 - Parat; Krishna K. ;   et al. | 2013-12-12 |
In-field block retiring Grant 8,514,624 - Parat , et al. August 20, 2 | 2013-08-20 |
In-field Block Retiring App 20120327713 - Parat; Krishna K. ;   et al. | 2012-12-27 |
Memory cells containing charge-trapping zones Grant 8,228,743 - Min , et al. July 24, 2 | 2012-07-24 |
Floating gate structures Grant 7,989,289 - Krishnamohan , et al. August 2, 2 | 2011-08-02 |
Flash memory with partially removed blocking dielectric in the wordline direction App 20110147827 - Simsek-Ege; Fatma Arzum ;   et al. | 2011-06-23 |
Memory Cells App 20110133268 - Min; Kyu S. ;   et al. | 2011-06-09 |
Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells Grant 7,898,850 - Min , et al. March 1, 2 | 2011-03-01 |
Semiconductor device with high on current and low leakage Grant 7,728,387 - Krishnamohan , et al. June 1, 2 | 2010-06-01 |
Graded Oxy-nitride Tunnel Barrier App 20090321809 - Ramaswamy; Nirmal ;   et al. | 2009-12-31 |
Floating Gate Structures App 20090283817 - Krishnamohan; Tejas ;   et al. | 2009-11-19 |
Memory Cells, Electronic Systems, Methods Of Forming Memory Cells, And Methods of Programming Memory Cells App 20090097320 - Min; Kyu S. ;   et al. | 2009-04-16 |
Non-volatile Memory Cell With Multi-layer Blocking Dielectric App 20090001443 - Krishnamohan; Tejas ;   et al. | 2009-01-01 |
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