Kreupl; Franz

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kreupl; Franz.The latest application filed is for "non-volatile storage with metal oxide switching element and methods for fabricating the same".

Company Profile

0.71.76

Kreupl; Franz - Munich N/A DE
Kreupl; Franz - Mountain View CA
Kreupl; Franz - Munchen DE
Kreupl; Franz - Muenchen DE
Kreupl, Franz - Mandlslr DE
Kreupl, Franz - Deutschland DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vertical interconnect structure, memory device and associated production method Grant 9,177,995 - Gutsche , et al. November 3, 2	2015-11-03
Non-volatile storage with metal oxide switching element and methods for fabricating the same Grant 9,034,689 - Sekar , et al. May 19, 2	2015-05-19
Trap passivation in memory cell with metal oxide switching element Grant 8,987,046 - Sekar , et al. March 24, 2	2015-03-24
Semiconductor chip with integrated via Grant 8,912,654 - Kreupl , et al. December 16, 2	2014-12-16
Bottom electrodes for use with metal oxide resistivity switching layers Grant 8,772,749 - Sekar , et al. July 8, 2	2014-07-08
Resistive memory devices with improved resistive changing elements Grant 8,742,387 - Happ , et al. June 3, 2	2014-06-03
Memory cell with resistance-switching layers Grant 8,737,111 - Kreupl , et al. May 27, 2	2014-05-27
Structure and fabrication method for resistance-change memory cell in 3-D memory Grant 8,686,419 - Kreupl , et al. April 1, 2	2014-04-01
Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure Grant 8,664,657 - Duesberg , et al. March 4, 2	2014-03-04
Carbon/tunneling-barrier/carbon diode Grant 8,624,293 - Bandyopadhyay , et al. January 7, 2	2014-01-07
Non-volatile Storage With Metal Oxide Switching Element And Methods For Fabricating The Same App 20130234099 - Sekar; Deepak C. ; et al.	2013-09-12
Trap Passivation In Memory Cell With Metal Oxide Switching Element App 20130221311 - Sekar; Deepak C. ; et al.	2013-08-29
Composition of memory cell with resistance-switching layers Grant 8,520,424 - Kreupl , et al. August 27, 2	2013-08-27
P-/Metal floating gate non-volatile storage element Grant 8,503,229 - Lee , et al. August 6, 2	2013-08-06
Resistance-switching memory cell with heavily doped metal oxide layer Grant 8,487,292 - Sekar , et al. July 16, 2	2013-07-16
Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same Grant 8,471,360 - Kreupl , et al. June 25, 2	2013-06-25
Bottom Electrodes For Use With Metal Oxide Resistivity Switching Layers App 20130126821 - Sekar; Deepak Chandra ; et al.	2013-05-23
Non-volatile storage with metal oxide switching element and methods for fabricating the same Grant 8,435,831 - Sekar , et al. May 7, 2	2013-05-07
Vertical interconnect structure, memory device and associated production method Grant 8,420,526 - Gutsche , et al. April 16, 2	2013-04-16
Memory cell with resistance-switching layers including breakdown layer Grant 8,395,927 - Kreupl , et al. March 12, 2	2013-03-12
Memory cell with resistance-switching layers and lateral arrangement Grant 8,395,926 - Kreupl , et al. March 12, 2	2013-03-12
Bottom electrodes for use with metal oxide resistivity switching layers Grant 8,354,660 - Sekar , et al. January 15, 2	2013-01-15
Vertical Interconnect Structure, Memory Device And Associated Production Method App 20120305873 - Gutsche; Martin ; et al.	2012-12-06
Semiconductor power switch having nanowires Grant 8,319,259 - Kreupl , et al. November 27, 2	2012-11-27
P-/metal Floating Gate Non-volatile Storage Element App 20120243337 - Lee; Sanghyun ; et al.	2012-09-27
Integrated circuit including doped semiconductor line having conductive cladding Grant 8,254,166 - Klosterman , et al. August 28, 2	2012-08-28
Memory cell with silicon-containing carbon switching layer and methods for forming the same Grant 8,237,146 - Kreupl , et al. August 7, 2	2012-08-07
Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers Grant 8,216,639 - Liebau , et al. July 10, 2	2012-07-10
Forming and training processes for resistance-change memory cell Grant 8,216,862 - Kreupl , et al. July 10, 2	2012-07-10
Bipolar Storage Elements For Use In Memory Cells And Methods Of Forming The Same App 20120091418 - Chen; Yung-Tin ; et al.	2012-04-19
Modifiable gate stack memory element Grant 8,097,872 - Kreupl January 17, 2	2012-01-17
Integrated circuit including doped semiconductor line having conductive cladding Grant 8,084,759 - Klostermann , et al. December 27, 2	2011-12-27
Memory Cell With Resistance-Switching Layers Including Breakdown Layer App 20110310656 - Kreupl; Franz ; et al.	2011-12-22
Memory Cell With Resistance-Switching Layers App 20110310653 - Kreupl; Franz ; et al.	2011-12-22
Memory Cell With Resistance-Switching Layers And Lateral Arrangement App 20110310654 - Kreupl; Franz ; et al.	2011-12-22
Composition Of Memory Cell With Resistance-Switching Layers App 20110310655 - Kreupl; Franz ; et al.	2011-12-22
Integrated circuit Grant 8,063,394 - Andres , et al. November 22, 2	2011-11-22
Memory Cell With Carbon Switching Material Having A Reduced Cross-sectional Area And Methods For Forming The Same App 20110254126 - Kreupl; Franz ; et al.	2011-10-20
Vertical Interconnect Structure, Memory Device And Associated Production Method App 20110248234 - Gutsche; Martin ; et al.	2011-10-13
Resistance-switching Memory Cell With Heavily Doped Metal Oxide Layer App 20110227024 - Sekar; Deepak C. ; et al.	2011-09-22
Bottom Electrodes For Use With Metal Oxide Resistivity Switching Layers App 20110227028 - Sekar; Deepak Chandra ; et al.	2011-09-22
Non-volatile Storage With Metal Oxide Switching Element And Methods For Fabricating The Same App 20110227026 - Sekar; Deepak C. ; et al.	2011-09-22
Forming And Training Processes For Resistance-change Memory Cell App 20110229990 - Kreupl; Franz ; et al.	2011-09-22
Bottom Electrodes For Use With Metal Oxide Resistivity Switching Layers App 20110227020 - Sekar; Deepak Chandra ; et al.	2011-09-22
Memory Cell With Silicon-containing Carbon Switching Layer And Methods For Forming The Same App 20110204474 - Kreupl; Franz ; et al.	2011-08-25
Structure And Fabrication Method For Resistance-Change Memory Cell In 3-D Memory App 20110204316 - Kreupl; Franz ; et al.	2011-08-25
Vertical interconnect structure, memory device and associated production method Grant 7,998,858 - Gutsche , et al. August 16, 2	2011-08-16
Carbon/tunneling-barrier/carbon Diode App 20110140064 - Bandyopadhyay; Abhijit ; et al.	2011-06-16
Modifiable gate stack memory element Grant 7,915,603 - Kreupl March 29, 2	2011-03-29
Method of producing a layer arrangement, method of producing an electrical component, layer arrangement, and electrical component Grant 7,910,210 - Kreupl , et al. March 22, 2	2011-03-22
Integrated circuit having a magnetic tunnel junction device and method Grant 7,902,616 - Klostermann , et al. March 8, 2	2011-03-08
Carbon filament memory and fabrication method Grant 7,894,253 - Kreupl , et al. February 22, 2	2011-02-22
Magnetoresistive sensor with tunnel barrier and method Grant 7,863,700 - Kreupl , et al. January 4, 2	2011-01-04
Carbon diode array for resistivity changing memories Grant 7,768,016 - Kreupl August 3, 2	2010-08-03
Carbon memory Grant 7,728,405 - Kreupl June 1, 2	2010-06-01
Vertically integrated field-effect transistor having a nanostructure therein Grant 7,709,827 - Graham , et al. May 4, 2	2010-05-04
Integrated Circuit App 20100084741 - Andres; Dieter ; et al.	2010-04-08
Integrated Circuit Including Doped Semiconductor Line Having Conductive Cladding App 20100061140 - Klostermann; Ulrich ; et al.	2010-03-11
Information Storage And Retrieval System App 20100057685 - Luhn; Gerhard ; et al.	2010-03-04
Method for fabricating a nanoelement field effect transistor with surrounded gate structure Grant 7,646,045 - Kreupl , et al. January 12, 2	2010-01-12
Resistive Memory Devices with Improved Resistive Changing Elements App 20090321706 - Happ; Thomas ; et al.	2009-12-31
Magnetoresistive Sensor With Tunnel Barrier And Method App 20090322319 - Kreupl; Franz ; et al.	2009-12-31
Integrated Circuit Having A Magnetic Tunnel Junction Device And Method App 20090321860 - Klostermann; Ulrich ; et al.	2009-12-31
Nanotube array and method for producing a nanotube array Grant 7,635,867 - Graham , et al. December 22, 2	2009-12-22
Memory Device With Different Types Of Phase Change Memory App 20090268513 - De Ambroggi; Luca ; et al.	2009-10-29
Semiconductor Chip With Integrated Via App 20090256258 - Kreupl; Franz ; et al.	2009-10-15
Communication System App 20090213830 - Duesberg; Georg ; et al.	2009-08-27
Integrated Circuit Device Comprising Conductive Vias And Method Of Making The Same App 20090212438 - Kreupl; Franz ; et al.	2009-08-27
Carbon Diode Array for Resistivity Changing Memories App 20090201715 - Kreupl; Franz	2009-08-13
Error Correction In An Integrated Circuit With An Array Of Memory Cells App 20090199043 - Schrogmeier; Peter ; et al.	2009-08-06
Integrated Circuit Including Doped Semiconductor Line Having Conductive Cladding App 20090108248 - KLOSTERMANN; ULRICH ; et al.	2009-04-30
Integrated Circuit Including Memory Having Limited Read App 20090046499 - Philipp; Jan Boris ; et al.	2009-02-19
Stacked Circuits App 20090026524 - Kreupl; Franz ; et al.	2009-01-29
Nanowire Vias App 20080315430 - WEBER; WALTER M. ; et al.	2008-12-25
Semiconductor Power Switch and Method for Producing a Semiconductor Power Switch App 20080296557 - Kreupl; Franz ; et al.	2008-12-04
Method for Fabricating a Nanoelement Field Effect Transistor with Surrounded Gate Structure App 20080296559 - Kreupl; Franz ; et al.	2008-12-04
Method for fabricating a nanoelement field effect transistor with surrounded gate structure Grant 7,425,487 - Kreupl , et al. September 16, 2	2008-09-16
Carbon memory App 20080217732 - Kreupl; Franz	2008-09-11
Resistivity changing memory cell having nanowire electrode Grant 7,420,199 - Gutsche , et al. September 2, 2	2008-09-02
Method of producing a layered arrangement and layered arrangement Grant 7,413,971 - Steinhogl , et al. August 19, 2	2008-08-19
Method For Making An Integrated Circuit Having A Via Hole App 20080164611 - Hedler; Harry ; et al.	2008-07-10
Modifiable gate stack memory element App 20080099827 - Kreupl; Franz	2008-05-01
Modifiable gate stack memory element App 20080101121 - Kreupl; Franz	2008-05-01
Carbon filament memory and method for fabrication App 20080102278 - Kreupl; Franz ; et al.	2008-05-01
Carbon filament memory and fabrication method App 20080099752 - Kreupl; Franz ; et al.	2008-05-01
IC chip with nanowires Grant 7,339,186 - Mio , et al. March 4, 2	2008-03-04
Integrated electronic component Grant 7,326,465 - Seidel , et al. February 5, 2	2008-02-05
Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the same Grant 7,321,097 - Engelhardt , et al. January 22, 2	2008-01-22
Electronic chip and electronic chip assembly Grant 7,301,779 - Honlein , et al. November 27, 2	2007-11-27
Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell Grant 7,265,376 - Graham , et al. September 4, 2	2007-09-04
Integrated circuits, memory device, method of producing an integrated circuit, method of producing a memory device, memory module App 20070187744 - Kreupl; Franz	2007-08-16
Integrated circuit arrangement App 20070176255 - Kreupl; Franz ; et al.	2007-08-02
Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers App 20070141256 - Liebau; Maik ; et al.	2007-06-21
Method of producing a layer arrangement, method of producing an electrical component, layer arrangement, and electrical component App 20070122621 - Kreupl; Franz ; et al.	2007-05-31
Vertical interconnect structure, memory device and associated production method App 20070105333 - Gutsche; Martin ; et al.	2007-05-10
Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement and method for producing the fin field effect transistor memory cell App 20070018218 - Kretz; Johannes ; et al.	2007-01-25
Phase change memory cell having nanowire electrode App 20070012956 - Gutsche; Martin Ulrich ; et al.	2007-01-18
Method for depositing a conductive carbon material on a semiconductor for forming a Schottky contact and semiconductor contact device App 20070010094 - Kreupl; Franz ; et al.	2007-01-11
Method for fabricating a nanoelement field effect transistor with surrounded gate structure App 20060261419 - Kreupl; Franz ; et al.	2006-11-23
Process for producing and removing a mask layer Grant 7,129,173 - Drummer , et al. October 31, 2	2006-10-31
Integrated electronic component App 20060234080 - Seidel; Robert ; et al.	2006-10-19
Memory device for storing electric charge, and method for fabricating it App 20060186451 - Dusberg; Georg ; et al.	2006-08-24
Method for fabricating memory cells and memory cell array Grant 7,081,383 - Gutsche , et al. July 25, 2	2006-07-25
Method for the production of a memory cell, memory cell and memory cell arrangement App 20060154467 - Hoffman; Franz ; et al.	2006-07-13
Vertical integrated component, component arrangement and method for production of a vertical integrated component App 20060128088 - Graham; Andrew ; et al.	2006-06-15
Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell App 20060011972 - Graham; Andrew ; et al.	2006-01-19
Memory cell, memory cell arrangement, patterning arrangement, and method for fabricating a memory cell App 20050276093 - Graham, Andrew ; et al.	2005-12-15
Integrated circuit array App 20050224888 - Graham, Andrew ; et al.	2005-10-13
Method of producing layered assembly and a layered assembly App 20050196950 - Steinhogl, Werner ; et al.	2005-09-08
Method for producing an integrated circuit having at least one metalicized surface Grant 6,930,052 - Schwarzl , et al. August 16, 2	2005-08-16
Contact-connection of nanotubes App 20050148174 - Unger, Eugen ; et al.	2005-07-07
Method for fabricating memory cells and memory cell array App 20050095780 - Gutsche, Martin ; et al.	2005-05-05
IC chip with nanowires App 20050029654 - Mio, Hannes ; et al.	2005-02-10
Electronic chip and electronic chip assembly App 20040233649 - Honlein, Wolfgang ; et al.	2004-11-25
Nanotube array and method for producing a nanotube array App 20040232426 - Graham, Andrew ; et al.	2004-11-25
Magnetic memory unit and magnetic memory array Grant 6,809,361 - Honlein , et al. October 26, 2	2004-10-26
Field effect transistor and method for producing a field effect transistor Grant 6,809,379 - Kreupl October 26, 2	2004-10-26
Field effect transistor Grant 6,798,000 - Luyken , et al. September 28, 2	2004-09-28
Magnetic Memory Unit And Magnetic Memory Array App 20040183110 - Honlein, Wolfgang ; et al.	2004-09-23
Magnetoresistive memory cell with polarity-dependent resistance Grant 6,777,731 - Kreupl August 17, 2	2004-08-17
Method for producing an integrated circuit having at least one metalicized surface App 20040092093 - Schwarzl, Siegfried ; et al.	2004-05-13
Electronic device and method for fabricating an electronic device Grant 6,707,098 - Hofmann , et al. March 16, 2	2004-03-16
Process for producing and removing a mask layer App 20040048479 - Drummer, Heike ; et al.	2004-03-11
Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the same App 20030179559 - Engelhardt, Manfred ; et al.	2003-09-25
Field effect transistor and method for producing a field effect transistor App 20030155591 - Kreupl, Franz	2003-08-21
Field effect transistor App 20030148562 - Luyken, Richard Johannes ; et al.	2003-08-07
Magnetoresistive memory cell with polarity-dependent resistance App 20030142562 - Kreupl, Franz	2003-07-31
Electronic device and method for fabricating an electronic device App 20020153160 - Hofmann, Franz ; et al.	2002-10-24
Method for fabricating a semiconductor memory component App 20020115253 - Engelhardt, Manfred ; et al.	2002-08-22
Method for producing an integrated circuit having at least one metalicized surface App 20020098679 - Schwarzl, Siegfried ; et al.	2002-07-25

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