Koyama; Shin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Koyama; Shin.The latest application filed is for "electronic tag writing system and method for same".

Company Profile

2.7.10

Koyama; Shin - Yokkaichi JP
KOYAMA; Shin - Odawara-shi JP
Koyama; Shin - Kanagawa JP
Koyama; Shin - Tokyo JP
Koyama; Shin - Kawasaki JP
Koyama; Shin - Kawasaki-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same Grant 11,393,757 - Takii , et al. July 19, 2	2022-07-19
Electronic Tag Writing System And Method For Same App 20220188530 - IKAWA; Taro ; et al.	2022-06-16
Three-dimensional Memory Device Containing Oxidation-resistant Contact Structures And Methods Of Making The Same App 20220157724 - TAKII; Eisuke ; et al.	2022-05-19
Electronic tag writing system and method for same Grant 11,334,727 - Ikawa , et al. May 17, 2	2022-05-17
Electronic Tag Writing System And Method For Same App 20210081621 - Ikawa; Taro ; et al.	2021-03-18
Semiconductor device including a plurality of nitride semiconductor layers Grant 10,658,469 - Iizuka , et al.	2020-05-19
Semiconductor Device And Manufacturing Method Of Semiconductor Device App 20170047409 - IIZUKA; Toshihiro ; et al.	2017-02-16
Semiconductor device having dual work function metal Grant 8,343,865 - Watanabe , et al. January 1, 2	2013-01-01
Semiconductor device having dual work function metal App 20110175167 - Watanabe; Koji ; et al.	2011-07-21
Pattern for evaluating electric characteristics, method for evaluating electric characteristics, method for manufacturing semiconductor device and method for providing reliability assurance App 20080038851 - Koyama; Shin ; et al.	2008-02-14
High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions Grant 6,794,258 - Makabe , et al. September 21, 2	2004-09-21
High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions App 20040026752 - Makabe, Mariko ; et al.	2004-02-12
High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions Grant 6,614,081 - Makabe , et al. September 2, 2	2003-09-02
Semiconductor apparatus including CMOS circuits and method for fabricating the same Grant 6,603,179 - Ando , et al. August 5, 2	2003-08-05
Semiconductor appratus including CMOS circuits and method for fabricating the same App 20020063295 - Ando, Koichi ; et al.	2002-05-30
High-performance MOS transistor of LDD structure and manufacturing method of the same App 20010028086 - Makabe, Mariko ; et al.	2001-10-11
Method for fabricating semiconductor device App 20010016388 - Koyama, Shin ; et al.	2001-08-23

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