| Patent | Date |
|---|
Vertical Channel With Conductive Structures To Improve String Current
App 20220189987 - MEBRAHTU; Henok T. ; et al. | 2022-06-16 |
Semiconductor Devices And Methods Of Fabrication
App 20210366931 - Zhu; Hongbin ; et al. | 2021-11-25 |
Methods And Apparatuses Including An Asymmetric Assist Device
App 20210280255 - Koval; Randy J. ; et al. | 2021-09-09 |
Semiconductor devices and methods of fabrication
Grant 11,088,168 - Zhu , et al. August 10, 2 | 2021-08-10 |
Methods and apparatuses including an asymmetric assist device
Grant 11,037,633 - Koval , et al. June 15, 2 | 2021-06-15 |
Non-volatile memory with storage nodes having a radius of curvature
Grant 10,825,831 - Koval , et al. November 3, 2 | 2020-11-03 |
Semiconductor Devices And Methods Of Fabrication
App 20200227427 - Zhu; Hongbin ; et al. | 2020-07-16 |
Semiconductor devices and methods of fabrication
Grant 10,608,004 - Zhu , et al. | 2020-03-31 |
Methods And Apparatuses Including An Asymmetric Assist Device
App 20190252026 - Koval; Randy J. ; et al. | 2019-08-15 |
Methods and apparatuses including an asymmetric assist device
Grant 10,297,325 - Koval , et al. | 2019-05-21 |
Vertical memory having varying storage cell design through the storage cell stack
Grant 10,128,262 - Koval , et al. November 13, 2 | 2018-11-13 |
Semiconductor Devices And Methods Of Fabrication
App 20180315766 - Zhu; Hongbin ; et al. | 2018-11-01 |
Semiconductor devices and methods of fabrication
Grant 10,038,002 - Zhu , et al. July 31, 2 | 2018-07-31 |
Methods And Apparatuses Including An Asymmetric Assist Device
App 20180130536 - Koval; Randy J. ; et al. | 2018-05-10 |
Methods of forming a portion of a memory array having a conductor having a variable concentration of germanium
Grant 9,953,842 - Koval April 24, 2 | 2018-04-24 |
Semiconductor Devices And Methods Of Fabrication
App 20180108669 - Zhu; Hongbin ; et al. | 2018-04-19 |
Methods and apparatuses including an asymmetric assist device
Grant 9,875,801 - Koval , et al. January 23, 2 | 2018-01-23 |
Methods Of Forming A Portion Of A Memory Array Having A Conductor Having A Variable Concentration Of Germanium
App 20170263467 - Koval; Randy J. | 2017-09-14 |
Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling
Grant 9,722,074 - Koval , et al. August 1, 2 | 2017-08-01 |
Self-aligned floating gate in a vertical memory structure
Grant 9,698,022 - Koval July 4, 2 | 2017-07-04 |
Vertical memory having varying storage cell design through the storage cell stack
App 20170186765 - Koval; Randy J. ; et al. | 2017-06-29 |
Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
Grant 9,666,449 - Koval May 30, 2 | 2017-05-30 |
Self-aligned Floating Gate In A Vertical Memory Structure
App 20170011928 - Koval; Randy J. | 2017-01-12 |
Self-aligned floating gate in a vertical memory structure
Grant 9,443,864 - Koval September 13, 2 | 2016-09-13 |
Local Buried Channel Dielectric For Vertical Nand Performance Enhancement And Vertical Scaling
App 20160190313 - Koval; Randy J. ; et al. | 2016-06-30 |
Self-aligned Floating Gate In A Vertical Memory Structure
App 20150364486 - Koval; Randy J. | 2015-12-17 |
Conductors Having A Variable Concentration Of Germanium For Governing Removal Rates Of The Conductor During Control Gate Formation
App 20150364483 - Koval; Randy J. | 2015-12-17 |
Self-aligned floating gate in a vertical memory structure
Grant 9,196,625 - Koval November 24, 2 | 2015-11-24 |
Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling
Grant 9,190,490 - Koval , et al. November 17, 2 | 2015-11-17 |
Methods And Apparatuses Including An Asymmetric Assist Device
App 20150221347 - Koval; Randy J. ; et al. | 2015-08-06 |
Use of etch process post wordline definition to improve data retention in a flash memory device
Grant 9,082,714 - Koval , et al. July 14, 2 | 2015-07-14 |
Self-aligned Floating Gate In A Vertical Memory Structure
App 20150187785 - Koval; Randy J. | 2015-07-02 |
Self-aligned floating gate in a vertical memory structure
Grant 8,878,279 - Koval November 4, 2 | 2014-11-04 |
Local Buried Channel Dielectric For Vertical Nand Performance Enhancement And Vertical Scaling
App 20140264527 - Koval; Randy J. ; et al. | 2014-09-18 |
Self-aligned Floating Gate In A Vertical Memory Structure
App 20140160841 - Koval; Randy J. | 2014-06-12 |
Use Of Etch Process Post Wordline Definition To Improve Data Retention In A Flash Memory Device
App 20130264628 - Koval; Randy J. ; et al. | 2013-10-10 |
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