Kotlyar; Roza

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kotlyar; Roza.The latest application filed is for "lateral gate material arrangements for quantum dot devices".

Company Profile

20.49.65

Kotlyar; Roza - Portland OR
Kotlyar; Roza - Portand OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Transistors with high concentration of germanium Grant 11,387,320 - Murthy , et al. July 12, 2	2022-07-12
Stacked nanowire transistor structure with different channel geometries for stress Grant 11,367,722 - Lilak , et al. June 21, 2	2022-06-21
Lateral Gate Material Arrangements For Quantum Dot Devices App 20220190135 - Kotlyar; Roza ; et al.	2022-06-16
Cmos Finfet Device Having Strained Sige Fins And A Strained Si Cladding Layer On The Nmos Channel App 20220059656 - Cea; Stephen M. ; et al.	2022-02-24
Quantum Well Stacks For Quantum Dot Devices App 20220013658 - Pillarisetty; Ravi ; et al.	2022-01-13
Transition Metal-iii-nitride Alloys For Robust High Performance Hemts App 20210399119 - VISHWANATH; Suresh ; et al.	2021-12-23
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer Grant 11,195,919 - Cea , et al. December 7, 2	2021-12-07
Quantum dot devices with strain control Grant 11,183,564 - Thomas , et al. November 23, 2	2021-11-23
Quantum well stacks for quantum dot devices Grant 11,158,731 - Pillarisetty , et al. October 26, 2	2021-10-26
Hexagonal arrays for quantum dot devices Grant 11,107,891 - Pillarisetty , et al. August 31, 2	2021-08-31
Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer Grant 10,868,246 - Karpov , et al. December 15, 2	2020-12-15
High Mobility Strained Channels For Fin-based Nmos Transistors App 20200381549 - CEA; STEPHEN M. ; et al.	2020-12-03
High mobility strained channels for fin-based NMOS transistors Grant 10,854,752 - Cea , et al. December 1, 2	2020-12-01
Quantum Well Stacks For Quantum Dot Devices App 20200350423 - Pillarisetty; Ravi ; et al.	2020-11-05
Hexagonal Arrays For Quantum Dot Devices App 20200321436 - Pillarisetty; Ravi ; et al.	2020-10-08
Stacked channel structures for MOSFETs Grant 10,790,281 - Mehandru , et al. September 29, 2	2020-09-29
Stacked Transistors With Different Crystal Orientations In Different Device Strata App 20200295127 - Mannebach; Ehren ; et al.	2020-09-17
Fin strain in quantum dot devices Grant 10,665,770 - Pillarisetty , et al.	2020-05-26
Transistors With High Concentration Of Germanium App 20200144362 - MURTHY; Anand S. ; et al.	2020-05-07
Gate-all-around Integrated Circuit Structures Having High Mobility App 20200105753 - KOTLYAR; Roza ; et al.	2020-04-02
Stacked Nanowire Transistor Structure With Different Channel Geometries For Stress App 20200098756 - Lilak; Aaron ; et al.	2020-03-26
Silicon PMOS with gallium nitride NMOS for voltage regulation Grant 10,600,787 - Dasgupta , et al.	2020-03-24
Functional metal oxide based microelectronic devices Grant 10,396,211 - Karpov , et al. A	2019-08-27
Conductive Bridge Random Access Memory (cbram) Devices With Low Thermal Conductivity Electrolyte Sublayer App 20190229264 - KARPOV; Elijah V. ; et al.	2019-07-25
Barriers For Metal Filament Memory Devices App 20190181337 - Pillarisetty; Ravi ; et al.	2019-06-13
High Mobility Strained Channels For Fin-based Nmos Transistors App 20190115466 - CEA; STEPHEN M. ; et al.	2019-04-18
Silicon Pmos With Gallium Nitride Nmos For Voltage Regulation App 20190051650 - Dasgupta; Sansaptak ; et al.	2019-02-14
Quantum Dot Devices With Strain Control App 20190043951 - Thomas; Nicole K. ; et al.	2019-02-07
Fin Strain In Quantum Dot Devices App 20190044050 - Pillarisetty; Ravi ; et al.	2019-02-07
CMOS FinFET Device Having Strained SiGe Fins and a Strained Si Cladding Layer on the NMOS Channel App 20190035893 - Cea; Stephen M. ; et al.	2019-01-31
High mobility strained channels for fin-based NMOS transistors Grant 10,153,372 - Cea , et al. Dec	2018-12-11
P-tunneling field effect transistor device with pocket Grant 10,128,356 - Avci , et al. November 13, 2	2018-11-13
Stacked Channel Structures For Mosfets App 20180323195 - Mehandru; Rishabh ; et al.	2018-11-08
Methods of forming low band gap source and drain structures in microelectronic devices Grant 10,115,822 - Rios , et al. October 30, 2	2018-10-30
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel Grant 10,109,711 - Cea , et al. October 23, 2	2018-10-23
Functional Metal Oxide Based Microelectronic Devices App 20180226509 - Karpov; Elijah V. ; et al.	2018-08-09
Germanium tin channel transistors Grant 9,972,686 - Pillarisetty , et al. May 15, 2	2018-05-15
CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same Grant 9,935,107 - Cea , et al. April 3, 2	2018-04-03
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs Grant 9,911,835 - Kotlyar , et al. March 6, 2	2018-03-06
High mobility strained channels for fin-based transistors Grant 9,893,149 - Cea , et al. February 13, 2	2018-02-13
Germanium-based quantum well devices Grant 9,876,014 - Pillarisetty , et al. January 23, 2	2018-01-23
Heterogeneous pocket for tunneling field effect transistors (TFETs) Grant 9,871,106 - Avci , et al. January 16, 2	2018-01-16
Vertical transistor devices for embedded memory and logic technologies Grant 9,871,117 - Doyle , et al. January 16, 2	2018-01-16
Transistor structure with variable clad/core dimension for stress and bandgap Grant 9,818,870 - Rachmady , et al. November 14, 2	2017-11-14
Vertical nanowire transistor with axially engineered semiconductor and gate metallization Grant 9,818,864 - Doyle , et al. November 14, 2	2017-11-14
Transistors With High Concentration Of Boron Doped Germanium App 20170221724 - MURTHY; ANAND S. ; et al.	2017-08-03
Non-planar device having uniaxially strained semiconductor body and method of making same Grant 9,680,013 - Cea , et al. June 13, 2	2017-06-13
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets App 20170133493 - Kotlyar; Roza ; et al.	2017-05-11
Germanium Tin Channel Transistors App 20170125527 - Pillarisetty; Ravi ; et al.	2017-05-04
Transistors with high concentration of boron doped germanium Grant 9,627,384 - Murthy , et al. April 18, 2	2017-04-18
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs Grant 9,583,602 - Kotlyar , et al. February 28, 2	2017-02-28
P-tunneling Field Effect Transistor Device With Pocket App 20170054006 - AVCI; Uygar E. ; et al.	2017-02-23
Germanium-based Quantum Well Devices App 20170012116 - Pillarisetty; Ravi ; et al.	2017-01-12
High Mobility Strained Channels For Fin-based Nmos Transistors App 20160351701 - CEA; STEPHEN M. ; et al.	2016-12-01
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets App 20160322480 - Kotlyar; Roza ; et al.	2016-11-03
Germanium-based quantum well devices Grant 9,478,635 - Pillarisetty , et al. October 25, 2	2016-10-25
Heterogeneous Pocket For Tunneling Field Effect Transistors (tfets) App 20160276440 - Avci; Uygar E. ; et al.	2016-09-22
Dual Strained Cladding Layers For Semiconductor Devices App 20160276347 - CEA; STEPHEN M ; et al.	2016-09-22
Nmos And Pmos Strained Devices Without Relaxed Substrates App 20160240616 - CEA; Stephen M. ; et al.	2016-08-18
Transistor Structure With Variable Clad/core Dimension For Stress And Bandgap App 20160240671 - RACHMADY; Willy ; et al.	2016-08-18
N-type and P-type tunneling field effect transistors (TFETs) Grant 9,412,872 - Kotlyar , et al. August 9, 2	2016-08-09
Vertical Transistor Devices For Embedded Memory And Logic Technologies App 20160190282 - Doyle; Brian S. ; et al.	2016-06-30
Methods Of Forming Low Band Gap Source And Drain Structures In Microelectronic Devices App 20160181424 - RIOS; Rafael ; et al.	2016-06-23
Vertical Nanowire Transistor With Axially Engineered Semiconductor And Gate Metallization App 20160163856 - Doyle; Brian S. ; et al.	2016-06-09
Vertical transistor devices for embedded memory and logic technologies Grant 9,306,063 - Doyle , et al. April 5, 2	2016-04-05
Vertical nanowire transistor with axially engineered semiconductor and gate metallization Grant 9,293,560 - Doyle , et al. March 22, 2	2016-03-22
High Mobility Strained Channels For Fin-based Transistors App 20160071934 - Cea; Stephen M. ; et al.	2016-03-10
Germanium-based Quantum Well Devices App 20160064520 - Pillarisetty; Ravi ; et al.	2016-03-03
Germanium-based quantum well devices Grant 9,219,135 - Pillarisetty , et al. December 22, 2	2015-12-22
High mobility strained channels for fin-based transistors Grant 9,184,294 - Cea , et al. November 10, 2	2015-11-10
Vertical Transistor Devices For Embedded Memory And Logic Technologies App 20150091058 - Doyle; Brian S. ; et al.	2015-04-02
Vertical Nanowire Transistor With Axially Engineered Semiconductor And Gate Metallization App 20150072490 - DOYLE; Brian S. ; et al.	2015-03-12
Transistors With High Concentration Of Boron Doped Germanium App 20150060945 - Murthy; Anand S. ; et al.	2015-03-05
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets App 20150041847 - Kotlyar; Roza ; et al.	2015-02-12
High Mobility Strained Channels For Fin-based Transistors App 20150008484 - Cea; Stephen M. ; et al.	2015-01-08
Transistors with high concentration of boron doped germanium Grant 8,901,537 - Murthy , et al. December 2, 2	2014-12-02
Vertical nanowire transistor with axially engineered semiconductor and gate metallization Grant 8,890,119 - Doyle , et al. November 18, 2	2014-11-18
Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs Grant 8,890,120 - Kotlyar , et al. November 18, 2	2014-11-18
High mobility strained channels for fin-based transistors Grant 8,847,281 - Cea , et al. September 30, 2	2014-09-30
Vertical Nanowire Transistor With Axially Engineered Semiconductor And Gate Metallization App 20140166981 - DOYLE; Brian S. ; et al.	2014-06-19
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets App 20140138744 - Kotlyar; Roza ; et al.	2014-05-22
Non-Planar Device Having Uniaxially Strained Semiconductor Body and Method of Making Same App 20140070273 - Cea; Stephen M. ; et al.	2014-03-13
Germanium-based Quantum Well Devices App 20140061589 - Pillarisetty; Ravi ; et al.	2014-03-06
High Mobility Strained Channels For Fin-based Transistors App 20140027816 - Cea; Stephen M. ; et al.	2014-01-30
Germanium-based quantum well devices Grant 8,592,803 - Pillarisetty , et al. November 26, 2	2013-11-26
Non-planar device having uniaxially strained semiconductor body and method of making same Grant 8,558,279 - Cea , et al. October 15, 2	2013-10-15
Germanium-based Quantum Well Devices App 20120193609 - Pillarisetty; Ravi ; et al.	2012-08-02
Transistors With High Concentration Of Boron Doped Germanium App 20120153387 - Murthy; Anand S. ; et al.	2012-06-21
Germanium-based quantum well devices Grant 8,193,523 - Pillarisetty , et al. June 5, 2	2012-06-05
Non-planar device having uniaxially strained semiconductor body and method of making same App 20120074464 - Cea; Stephen M. ; et al.	2012-03-29
Germanium-based quantum well devices App 20110156005 - Pillarisetty; Ravi ; et al.	2011-06-30
Methods of forming stress enhanced PMOS structures App 20060226453 - Wang; Everett X. ; et al.	2006-10-12

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