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Immunity of phase change material to disturb in the amorphous phase
Grant 8,634,226 - Gordon , et al. January 21, 2 | 2014-01-21 |
Method of restoring variable resistance memory device
Grant 8,098,517 - Kostylev January 17, 2 | 2012-01-17 |
Phase change memories with improved programming characteristics
Grant 8,062,921 - Wicker , et al. November 22, 2 | 2011-11-22 |
Immunity of Phase Change Material to Disturb in the Amorphous Phase
App 20110240943 - Gordon; George ; et al. | 2011-10-06 |
Method of programming multi-layer chalcogenide devices
Grant 8,000,125 - Sandoval , et al. August 16, 2 | 2011-08-16 |
Immunity of phase change material to disturb in the amorphous phase
Grant 7,990,761 - Gordon , et al. August 2, 2 | 2011-08-02 |
Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State
App 20100321991 - Kostylev; Sergey A. ; et al. | 2010-12-23 |
Chalcogenide devices exhibiting stable operation from the as-fabricated state
Grant 7,786,462 - Kostylev , et al. August 31, 2 | 2010-08-31 |
Multi-layer chalcogenide devices
Grant 7,767,992 - Sandoval , et al. August 3, 2 | 2010-08-03 |
Immunity of phase change material to disturb in the amorphous phase
App 20090244962 - Gordon; George ; et al. | 2009-10-01 |
Phase Change Memories With Improved Programming Characteristics
App 20090142882 - Wicker; Guy C. ; et al. | 2009-06-04 |
Method of restoring variable resistance memory device
App 20090109737 - Kostylev; Sergey A. | 2009-04-30 |
Chalcogenide devices and materials having reduced germanium or telluruim content
Grant 7,525,117 - Kostylev , et al. April 28, 2 | 2009-04-28 |
Phase change memories with improved programming characteristics
Grant 7,504,675 - Wicker , et al. March 17, 2 | 2009-03-17 |
Memory element with improved contacts
App 20090057645 - Kostylev; Sergey A. ; et al. | 2009-03-05 |
Memory element with improved contacts
Grant 7,473,574 - Kostylev , et al. January 6, 2 | 2009-01-06 |
Programmable resistance memory element with threshold switching material
Grant 7,459,762 - Kostylev , et al. December 2, 2 | 2008-12-02 |
Method of Programming Multi-Layer Chalcogenide Devices
App 20080273372 - Sandoval; Regino ; et al. | 2008-11-06 |
Phase change memories with improved programming characteristics
App 20080203376 - Wicker; Guy C. ; et al. | 2008-08-28 |
Electrically programmable memory element with improved contacts
Grant 7,407,829 - Lowrey , et al. August 5, 2 | 2008-08-05 |
Chalcogenide devices exhibiting stable operation from the as-fabricated state
App 20080048167 - Kostylev; Sergey A. ; et al. | 2008-02-28 |
Methods of accelerated life testing of programmable resistance memory elements
Grant 7,327,602 - Kostylev , et al. February 5, 2 | 2008-02-05 |
Memory element with improved contacts
App 20070235709 - Kostylev; Sergey A. ; et al. | 2007-10-11 |
Reading phase change memories without triggering reset cell threshold devices
Grant 7,280,390 - Kostylev , et al. October 9, 2 | 2007-10-09 |
Chalcogenide devices and materials having reduced germanium or telluruim content
App 20070034851 - Kostylev; Sergey A. ; et al. | 2007-02-15 |
Multi-layer chalcogenide devices
App 20070034849 - Sandoval; Regino ; et al. | 2007-02-15 |
Programmable resistance memory element with titanium rich adhesion layer
Grant 7,129,531 - Fournier , et al. October 31, 2 | 2006-10-31 |
Reading phase change memories without triggering reset cell threshold devices
App 20060233019 - Kostylev; Sergey A. ; et al. | 2006-10-19 |
Programmable resistance memory element with threshold switching material
App 20060118911 - Kostylev; Sergey A. ; et al. | 2006-06-08 |
Electrically programmable memory element with improved contacts
App 20060110846 - Lowrey; Tyler ; et al. | 2006-05-25 |
Methods of accelerated life testing of programmable resistance memory elements
App 20060077705 - Kostylev; Sergey A. ; et al. | 2006-04-13 |
Electrically programmable memory element with improved contacts
Grant 7,023,009 - Kostylev , et al. April 4, 2 | 2006-04-04 |
Programmable resistance memory element with threshold switching material
Grant 6,992,369 - Kostylev , et al. January 31, 2 | 2006-01-31 |
Electrically programmable memory element with improved contacts
Grant 6,969,866 - Lowrey , et al. November 29, 2 | 2005-11-29 |
Method of eliminating drift in phase-change memory
Grant 6,914,801 - Kostylev , et al. July 5, 2 | 2005-07-05 |
Programmable resistance memory element with threshold switching material
App 20050077515 - Kostylev, Sergey A. ; et al. | 2005-04-14 |
Programmable resistance memory element with layered memory material
Grant 6,872,963 - Kostylev , et al. March 29, 2 | 2005-03-29 |
Electrically programmable memory element with improved contacts
App 20040256694 - Kostylev, Sergey A. ; et al. | 2004-12-23 |
Electrically programmable memory element with improved contacts
App 20040245603 - Lowrey, Tyler ; et al. | 2004-12-09 |
Method of eliminating drift in phase-change memory
App 20040228159 - Kostylev, Sergey A. ; et al. | 2004-11-18 |
Programmable resistance memory element with titanium rich adhesion layer
App 20040026731 - Fournier, Jeffrey P. ; et al. | 2004-02-12 |
Programmable resistance memory element with layered memory material
App 20040026730 - Kostylev, Sergey A. ; et al. | 2004-02-12 |
Method of programming phase-change memory element
Grant 6,075,719 - Lowrey , et al. June 13, 2 | 2000-06-13 |
Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
Grant 5,335,219 - Ovshinsky , et al. August 2, 1 | 1994-08-02 |
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