KONSTANTINOV; Andrei

Patent Applications and Registrations

Patent applications and USPTO patent grants for KONSTANTINOV; Andrei.The latest application filed is for "termination structures with reduced dynamic output capacitance loss".

Company Profile

2.40.36

KONSTANTINOV; Andrei - Sollentuna SE
Konstantinov; Andrei - Jarfalla SE
Konstantinov; Andrei - SE-175 23 Jarfalla SE
Konstantinov; Andrei - Linkoping SE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Termination Structures With Reduced Dynamic Output Capacitance Loss App 20220199764 - ROIG-GUITART; Jaume ; et al.	2022-06-23
Charge Balanced Rectifier With Shielding App 20220131016 - KONSTANTINOV; Andrei	2022-04-28
Sic Mosfet With Built-in Schottky Diode App 20220131015 - KONSTANTINOV; Andrei	2022-04-28
Schottky Rectifier With Surge-current Ruggedness App 20220029033 - KONSTANTINOV; Andrei	2022-01-27
Silicon Carbide Field-effect Transistors App 20220013661 - KONSTANTINOV; Andrei	2022-01-13
Schottky rectifier with surge-current ruggedness Grant 11,171,248 - Konstantinov November 9, 2	2021-11-09
Silicon carbide field-effect transistors Grant 11,139,394 - Konstantinov October 5, 2	2021-10-05
Silcon Carbide Field-effect Transistors App 20210066488 - KONSTANTINOV; Andrei	2021-03-04
Schottky Rectifier With Surge-current Ruggedness App 20200259022 - A1	2020-08-13
Low turn-on voltage silicon carbide rectifiers Grant 10,707,340 - Konstantinov	2020-07-07
Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device Grant 10,629,686 - Pham , et al.	2020-04-21
Low Turn-on Voltage Silicon Carbide Rectifiers App 20200083365 - KONSTANTINOV; Andrei	2020-03-12
Carbon-controlled Ohmic Contact Layer For Backside Ohmic Contact On A Silicon Carbide Power Semiconductor Device App 20200044031 - PHAM; Thi Thu Phuong ; et al.	2020-02-06
Avalanche-rugged silicon carbide (SiC) power device Grant 10,504,989 - Konstantinov Dec	2019-12-10
Silicon-carbide trench gate MOSFETs and methods of manufacture Grant 10,355,123 - Konstantinov July 16, 2	2019-07-16
Avalanche-rugged Silicon Carbide (sic) Power Device App 20180342576 - KONSTANTINOV; Andrei	2018-11-29
Avalanche-rugged silicon carbide (SiC) power device Grant 10,026,805 - Konstantinov July 17, 2	2018-07-17
Silicon-carbide Trench Gate Mosfets And Methods Of Manufacture App 20180145168 - KONSTANTINOV; Andrei	2018-05-24
Silicon-carbide trench gate MOSFETs Grant 9,893,176 - Konstantinov February 13, 2	2018-02-13
Avalanche-rugged Silicon Carbide (sic) Power Device App 20170345889 - KONSTANTINOV; Andrei	2017-11-30
Avalanche-rugged silicon carbide (SiC) power Schottky rectifier Grant 9,741,873 - Konstantinov August 22, 2	2017-08-22
Schottky-barrier device and related semiconductor product Grant 9,608,056 - Konstantinov March 28, 2	2017-03-28
Silicon carbide power bipolar devices with deep acceptor doping Grant 9,577,045 - Konstantinov February 21, 2	2017-02-21
Silicon-carbide Trench Gate Mosfets App 20170012119 - KONSTANTINOV; Andrei	2017-01-12
Silicon carbide bipolar junction transistor including shielding regions Grant 9,515,176 - Konstantinov December 6, 2	2016-12-06
Silicon-carbide trench gate MOSFETs Grant 9,466,709 - Konstantinov October 11, 2	2016-10-11
SiC power device having a high voltage termination Grant 9,461,108 - Konstantinov October 4, 2	2016-10-04
Avalanche-rugged Silicon Carbide (sic) Power Schottky Rectifier App 20160284871 - KONSTANTINOV; Andrei	2016-09-29
Configuration of portions of a power device within a silicon carbide crystal Grant 9,425,262 - Konstantinov August 23, 2	2016-08-23
Silicon-carbide Trench Gate Mosfets App 20160190308 - KONSTANTINOV; Andrei	2016-06-30
Sic Power Device Having A High Voltage Termination App 20160049465 - KONSTANTINOV; Andrei	2016-02-18
Silicon Carbide Power Bipolar Devices With Deep Acceptor Doping App 20160035836 - KONSTANTINOV; Andrei	2016-02-04
Configuration Of Portions Of A Power Device Within A Silicon Carbide Crystal App 20150349062 - KONSTANTINOV; Andrei	2015-12-03
Schottky-barrier Device And Related Semiconductor Product App 20150295023 - KONSTANTINOV; Andrei	2015-10-15
Schottky-barrier device with locally planarized surface and related semiconductor product Grant 9,105,557 - Konstantinov August 11, 2	2015-08-11
Bipolar junction transistor with spacer layer Grant 9,099,517 - Konstantinov August 4, 2	2015-08-04
Switching circuit and controller circuit Grant 8,994,442 - Konstantinov March 31, 2	2015-03-31
Grid-UMOSFET with electric field shielding of gate oxide Grant 8,946,726 - Harris , et al. February 3, 2	2015-02-03
Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof Grant 8,823,410 - Konstantinov September 2, 2	2014-09-02
SiC bipolar junction transistor with overgrown emitter Grant 8,785,945 - Konstantinov July 22, 2	2014-07-22
Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof Grant 8,704,546 - Konstantinov April 22, 2	2014-04-22
Bipolar Junction Transistor With Spacer Layer App 20140034968 - KONSTANTINOV; Andrei	2014-02-06
Schottky-barrier Device With Locally Planarized Surface And Related Semiconductor Product App 20140001490 - KONSTANTINOV; Andrei	2014-01-02
Switching Circuit And Controller Circuit App 20130342262 - KONSTANTINOV; Andrei	2013-12-26
Silicon Carbide Bipolar Junction Transistor Comprising Shielding Regions And Methods Of Manufacturing The Same App 20130313571 - KONSTANTINOV; Andrei	2013-11-28
Grid-umosfet With Electric Field Shielding Of Gate Oxide App 20130270577 - Harris; Christopher ; et al.	2013-10-17
Grid-UMOSFET with electric field shielding of gate oxide Grant 8,421,148 - Harris , et al. April 16, 2	2013-04-16
Sic Bipolar Junction Transistor With Overgrown Emitter App 20130087808 - Konstantinov; Andrei	2013-04-11
METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF App 20130087809 - Konstantinov; Andrei	2013-04-11
METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF App 20120105094 - Konstantinov; Andrei	2012-05-03
Short gate high power MOSFET and method of manufacture Grant 8,084,813 - Konstantinov , et al. December 27, 2	2011-12-27
Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications Grant 7,994,017 - Harris , et al. August 9, 2	2011-08-09
Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer Grant 7,834,396 - Harris , et al. November 16, 2	2010-11-16
Method Of Manufacturing Silicon Carbide Self-aligned Epitaxial Mosfet For High Powered Device Applications App 20100041195 - Harris; Christopher ; et al.	2010-02-18
Method and device of field effect transistor including a base shorted to a source region Grant 7,646,060 - Harris , et al. January 12, 2	2010-01-12
Silicon carbide self-aligned epitaxial MOSFET for high powered device applications Grant 7,629,616 - Harris , et al. December 8, 2	2009-12-08
Junction Barrier Schottky Diode With Submicron Channels App 20090224354 - Konstantinov; Andrei ; et al.	2009-09-10
Short Gate High Power Mosfet And Method Of Manufacture App 20090140326 - Konstantinov; Andrei ; et al.	2009-06-04
Grid-umosfet With Electric Field Shielding Of Gate Oxide App 20090072241 - Harris; Christopher ; et al.	2009-03-19
Silicon carbide self-aligned epitaxial MOSFET and method of manufacturing thereof App 20080203398 - Harris; Christopher ; et al.	2008-08-28
Vertical junction field effect transistor having an epitaxial gate Grant 7,355,223 - Harris , et al. April 8, 2	2008-04-08
Lateral Field Effect Transistor and Its Fabrication Comprising a Spacer Layer Above and Below the Channel Layer App 20070262321 - Harris; Christopher ; et al.	2007-11-15
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate Grant 7,279,368 - Harris , et al. October 9, 2	2007-10-09
Method and device App 20060252212 - Harris; Christopher ; et al.	2006-11-09
Vertical junction field effect transistor having an epitaxial gate App 20060220072 - Harris; Christopher ; et al.	2006-10-05
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate App 20060199312 - Harris; Christopher ; et al.	2006-09-07
Method of producing a semiconductor device of SiC Grant 6,306,773 - Ad.ang.s , et al. October 23, 2	2001-10-23
Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof Grant 6,278,133 - Harris , et al. August 21, 2	2001-08-21
Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor Grant 6,127,695 - Harris , et al. October 3, 2	2000-10-03
Method for fabricating a silicon carbide device Grant 6,100,111 - Konstantinov August 8, 2	2000-08-08
Semiconductor device having an insulated gate Grant 5,900,648 - Harris , et al. May 4, 1	1999-05-04
Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC Grant 5,851,908 - Harris , et al. December 22, 1	1998-12-22
Method for producing a semiconductor device having a semiconductor layer of SiC Grant 5,804,482 - Konstantinov , et al. September 8, 1	1998-09-08
Semiconductor device having a passivation layer Grant 5,650,638 - Harris , et al. July 22, 1	1997-07-22

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