| Patent | Date |
|---|
Method For Forming An Asymmetric Semiconductor Device
App 20120302022 - Kolagunta; Venkat R. | 2012-11-29 |
Process of forming an electronic device including insulating layers having different strains
Grant 8,021,957 - Grudowski , et al. September 20, 2 | 2011-09-20 |
Electronic device including insulating layers having different strains
Grant 7,843,011 - Grudowski , et al. November 30, 2 | 2010-11-30 |
Method for making a transistor with a stressor
Grant 7,799,650 - Bo , et al. September 21, 2 | 2010-09-21 |
Method of making a semiconductor device using a stressor
Grant 7,727,870 - Zhang , et al. June 1, 2 | 2010-06-01 |
Electronic device including a transistor structure having an active region adjacent to a stressor layer
Grant 7,714,318 - Adams , et al. May 11, 2 | 2010-05-11 |
Method of forming a semiconductor device with multiple tensile stressor layers
Grant 7,678,698 - Bo , et al. March 16, 2 | 2010-03-16 |
Process for forming an electronic device including semiconductor layers having different stresses
Grant 7,560,318 - Sadaka , et al. July 14, 2 | 2009-07-14 |
Method of making a semiconductor device with a stressor
Grant 7,534,674 - Goktepeli , et al. May 19, 2 | 2009-05-19 |
Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer
Grant 7,514,313 - Zia , et al. April 7, 2 | 2009-04-07 |
Process for forming an electronic device including transistor structures with sidewall spacers
Grant 7,504,289 - Lim , et al. March 17, 2 | 2009-03-17 |
Method For Making A Transistor With A Stressor
App 20090042351 - Bo; Xiangzheng ; et al. | 2009-02-12 |
Transfer of stress to a layer
Grant 7,479,465 - Spencer , et al. January 20, 2 | 2009-01-20 |
Electronic Device Including A Transistor Structure Having An Active Region Adjacent To A Stressor Layer
App 20080296633 - Adams; Vance H. ; et al. | 2008-12-04 |
Semiconductor Device With Multiple Tensile Stressor Layers And Method
App 20080272411 - Bo; Xiangzheng ; et al. | 2008-11-06 |
Method Of Making A Semiconductor Device With A Stressor
App 20080261355 - Goktepeli; Sinan ; et al. | 2008-10-23 |
Method Of Making A Semiconductor Device Using A Stressor
App 20080261362 - Zhang; Da ; et al. | 2008-10-23 |
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
Grant 7,420,202 - Adams , et al. September 2, 2 | 2008-09-02 |
Methodology to reduce SOI floating-body effect
Grant 7,410,876 - Min , et al. August 12, 2 | 2008-08-12 |
Electronic Device Including Insulating Layers Having Different Strains And A Process For Forming The Electronic Device
App 20080179679 - Grudowski; Paul A. ; et al. | 2008-07-31 |
Method Of Forming A Semiconductor Device Having A Symmetric Dielectric Regions And Structure Thereof
App 20080173957 - Mathew; Leo ; et al. | 2008-07-24 |
Transfer Of Stress To A Layer
App 20080026599 - Spencer; Gregory S. ; et al. | 2008-01-31 |
Method For Forming A Stressor Layer
App 20080026517 - Grudowski; Paul A. ; et al. | 2008-01-31 |
Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same
App 20070249127 - Mora; Rode R. ; et al. | 2007-10-25 |
Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
Grant 7,282,426 - Mathew , et al. October 16, 2 | 2007-10-16 |
Electronic device and a process for forming the electronic device
App 20070235813 - Zia; Omar ; et al. | 2007-10-11 |
Electronic device and a process for forming the electronic device
App 20070210381 - Sadaka; Mariam G. ; et al. | 2007-09-13 |
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
App 20070102755 - Adams; Vance H. ; et al. | 2007-05-10 |
Electronic device including transistor structures with sidewall spacers and a process for forming the electronic device
App 20070090455 - Lim; Sangwoo ; et al. | 2007-04-26 |
Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
Grant 7,161,199 - Chen , et al. January 9, 2 | 2007-01-09 |
Method of forming a semiconductor device and structure thereof
Grant 7,144,784 - Min , et al. December 5, 2 | 2006-12-05 |
Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
App 20060223335 - Mathew; Leo ; et al. | 2006-10-05 |
Double gate device having a heterojunction source/drain and strained channel
Grant 7,067,868 - Thean , et al. June 27, 2 | 2006-06-27 |
Method For Forming A Semiconductor Device Having A Strained Channel And A Heterojunction Source/drain
App 20060068553 - Thean; Voon-Yew ; et al. | 2006-03-30 |
Double gate device having a heterojunction source/drain and strained channel
App 20060065927 - Thean; Voon-Yew ; et al. | 2006-03-30 |
Method for forming a semiconductor device having a strained channel and a heterojunction source/drain
Grant 7,018,901 - Thean , et al. March 28, 2 | 2006-03-28 |
Transistor structure with stress modification and capacitive reduction feature in a channel direction and method thereof
App 20060043500 - Chen; Jian ; et al. | 2006-03-02 |
Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
App 20060043422 - Chen; Jian ; et al. | 2006-03-02 |
Method of forming a semiconductor device and structure thereof
App 20060024893 - Min; Byoung W. ; et al. | 2006-02-02 |
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