loadpatents
name:-0.004741907119751
name:-0.0058491230010986
name:-0.00043892860412598
Koketsu; Hiroaki Patent Filings

Koketsu; Hiroaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Koketsu; Hiroaki.The latest application filed is for "field effect transistor with a multilevel gate electrode for integration with a multilevel memory device".

Company Profile
0.5.5
  • Koketsu; Hiroaki - Yokkaichi JP
  • Koketsu; Hiroaki - Kanagawa JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Passive devices for integration with three-dimensional memory devices
Grant 9,646,981 - Nishikawa , et al. May 9, 2
2017-05-09
Field Effect Transistor With A Multilevel Gate Electrode For Integration With A Multilevel Memory Device
App 20170125430 - NISHIKAWA; Masatoshi ;   et al.
2017-05-04
Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device
Grant 9,620,512 - Nishikawa , et al. April 11, 2
2017-04-11
Bridge line structure for bit line connection in a three-dimensional semiconductor device
Grant 9,613,975 - Huang , et al. April 4, 2
2017-04-04
Passive devices for integration with three-dimensional memory devices
Grant 9,589,981 - Nishikawa , et al. March 7, 2
2017-03-07
Passive Devices For Integration With Three-dimensional Memory Devices
App 20160365352 - NISHIKAWA; Masatoshi ;   et al.
2016-12-15
Passive Devices For Integration With Three-dimensional Memory Devices
App 20160365351 - NISHIKAWA; Masatoshi ;   et al.
2016-12-15
Bridge Line Structure For Bit Line Connection In A Three-dimensional Semiconductor Device
App 20160293621 - Huang; Chenche ;   et al.
2016-10-06
NAND flash memory integrated circuits and processes with controlled gate height
Grant 9,245,898 - Fujikura , et al. January 26, 2
2016-01-26
NAND Flash Memory Integrated Circuits and Processes with Controlled Gate Height
App 20150380420 - Fujikura; Eiichi ;   et al.
2015-12-31

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