KOJUNDO CHEMICAL LABORATORY CO., LTD.

Patent Applications and Registrations

Patent applications and USPTO patent grants for KOJUNDO CHEMICAL LABORATORY CO., LTD..The latest application filed is for "bis(ethylcyclopentadienyl)tin, precursor for chemical vapor deposition, method of producing tin-containing thin film, and method of producing tin oxide thin film".

Company Profile

9.2.16

KOJUNDO CHEMICAL LABORATORY CO., LTD. - Sakado-shi, Saitama JP
KOJUNDO CHEMICAL LABORATORY CO., LTD. - Sakado-Shi Saitama JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Bis(ethylcyclopentadienyl)tin, Precursor For Chemical Vapor Deposition, Method Of Producing Tin-containing Thin Film, And Method Of Producing Tin Oxide Thin Film App 20220251706 - TAKAHASHI; Nobutaka ; et al.	2022-08-11
Vaporizable Source Material Container And Solid Vaporization/supply System Using The Same App 20220090261 - ITSUKI; Atsushi ; et al.	2022-03-24
Solid Vaporization/supply System Of Metal Halide For Thin Film Deposition App 20220064786 - ITSUKI; Atsushi ; et al.	2022-03-03
Bis(alkyltetramethylcyclopentadienyl)zinc, Precursor For Chemical Vapor Deposition, And Production Method For Zinc-containing Thin Film App 20210163519 - TAKAHASHI; Nobutaka ; et al.	2021-06-03
Atomic layer deposition method of metal-containing thin film Grant 10,752,992 - Mizutani , et al. A	2020-08-25
Precursor For Chemical Vapor Deposition, And Light-blocking Container Containing Precursor For Chemical Vapor Deposition And Met App 20200181775 - MIZUTANI; Fumikazu ; et al.	2020-06-11
Atomic Layer Deposition Method For Metal Thin Films App 20200087787 - MIZUTANI; Fumikazu ; et al.	2020-03-19
Atomic Layer Deposition Method Of Metal-containing Thin Film App 20190203357 - MIZUTANI; Fumikazu ; et al.	2019-07-04
Sputtering Target App 20150194293 - UNNO; Takahiro ; et al.	2015-07-09

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