Koizuka; Masaaki
Patent Applications and Registrations
Patent applications and USPTO patent grants for Koizuka; Masaaki.The latest application filed is for "semiconductor device fabricated by selective epitaxial growth method".
- Koizuka; Masaaki - Kawasaki JP
| Patent | Date |
|---|---|
| Selective epitaxial growth method using halogen containing gate sidewall mask Grant 8,497,191 - Fukuda , et al. July 30, 2 | 2013-07-30 |
| Semiconductor device fabricated by selective epitaxial growth method Grant 7,679,147 - Fukuda , et al. March 16, 2 | 2010-03-16 |
| Semiconductor device fabricated by selective epitaxial growth method App 20090117715 - Fukuda; Masahiro ; et al. | 2009-05-07 |
| Semiconductor device fabricated by selective epitaxial growth method App 20090045471 - Fukuda; Masahiro ; et al. | 2009-02-19 |
| Semiconductor device fabricated by selective epitaxial growth method Grant 7,446,394 - Fukuda , et al. November 4, 2 | 2008-11-04 |
| Semiconductor device and method for fabricating the same App 20070200203 - Fukuda; Masahiro ; et al. | 2007-08-30 |
| Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods Grant 5,505,157 - Hara , et al. April 9, 1 | 1996-04-09 |
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