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Patent applications and USPTO patent grants for KOIWA; Sumio.The latest application filed is for "through-hole electrode substrate".
Patent | Date |
---|---|
Through-hole Electrode Substrate App 20220246512 - KURAMOCHI; Satoru ;   et al. | 2022-08-04 |
Through-hole electrode substrate Grant 11,362,028 - Kuramochi , et al. June 14, 2 | 2022-06-14 |
Through-hole Electrode Substrate App 20200357733 - KURAMOCHI; Satoru ;   et al. | 2020-11-12 |
Through-hole electrode substrate Grant 10,790,221 - Kuramochi , et al. September 29, 2 | 2020-09-29 |
Through-hole Electrode Substrate App 20200152564 - KURAMOCHI; Satoru ;   et al. | 2020-05-14 |
Through-hole electrode substrate Grant 10,580,727 - Kuramochi , et al. | 2020-03-03 |
Through-hole Electrode Substrate App 20190172780 - KURAMOCHI; Satoru ;   et al. | 2019-06-06 |
Through-hole electrode substrate and semiconductor device using through-hole electrode substrate Grant 10,256,176 - Kuramochi , et al. | 2019-04-09 |
Through Electrode Substrate And Semiconductor Device Using Through Electrode Substrate App 20160276257 - KURAMOCHI; Satoru ;   et al. | 2016-09-22 |
Semiconductor device and designing method for the same Grant 7,606,012 - Koiwa October 20, 2 | 2009-10-20 |
Semiconductor device and designing method for the same App 20060221520 - Koiwa; Sumio | 2006-10-05 |
Short-wavelength photodiode of enhanced sensitivity with low leak current and method of manufacturing photodiode Grant 6,809,391 - Koiwa October 26, 2 | 2004-10-26 |
Method of manufacturing a semiconductor device App 20040191995 - Koiwa, Sumio | 2004-09-30 |
Complementary MOS semiconductor device Grant 6,777,752 - Osanai , et al. August 17, 2 | 2004-08-17 |
Complementary MOS semiconductor device and method of manufacturing the same App 20020084492 - Osanai, Jun ;   et al. | 2002-07-04 |
Method of manufacturing a semiconductor device Grant 6,297,120 - Koiwa October 2, 2 | 2001-10-02 |
MOS semiconductor device Grant 6,037,627 - Kitamura , et al. March 14, 2 | 2000-03-14 |
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