| Patent | Date |
|---|
Imaging Device
App 20210408090 - KOHYAMA; YUSUKE | 2021-12-30 |
Imaging Element And Electronic Equipment
App 20210399029 - OHURA; Masashi ; et al. | 2021-12-23 |
Solid-state Image Pickup Device And Camera Module
App 20160028983 - UYA; Shinji ; et al. | 2016-01-28 |
Camera Module, Solid-state Imaging Device, And Method Of Manufacturing The Same
App 20140218578 - Kohyama; Yusuke | 2014-08-07 |
Solid-state imaging device with vertical gate electrode and method of manufacturing the same
Grant 8,310,003 - Kohyama November 13, 2 | 2012-11-13 |
Semiconductor device with an electrode as an alignment mark, and method of manufacturing the same
Grant 8,138,533 - Koike , et al. March 20, 2 | 2012-03-20 |
Solid-state image pickup device and method for manufacturing same
Grant 8,133,753 - Kohyama March 13, 2 | 2012-03-13 |
Solid-state image pickup device and method for manufacturing same
Grant 8,039,883 - Kohyama October 18, 2 | 2011-10-18 |
Solid-state Image Pickup Device And Method For Manufacturing Same
App 20110250716 - KOHYAMA; Yusuke | 2011-10-13 |
Solid-state Imaging Device And Method Of Manufacturing The Same
App 20110042552 - FURUYA; Shogo ; et al. | 2011-02-24 |
Back-illuminated type solid-state image pickup device and camera module using the same
Grant 7,859,073 - Matsuo , et al. December 28, 2 | 2010-12-28 |
Semiconductor Device And Method Of Manufacturing The Same
App 20100155796 - KOIKE; Hidetoshi ; et al. | 2010-06-24 |
Step-embedded SiGe structure for PFET mobility enhancement
Grant 7,696,537 - Kohyama April 13, 2 | 2010-04-13 |
Solid-state Imaging Device With Vertical Gate Electrode And Method Of Manufacturing The Same
App 20100025738 - KOHYAMA; Yusuke | 2010-02-04 |
STI Structure At SOI/Bulk Transition For HOT Device
App 20100006973 - KOHYAMA; Yusuke | 2010-01-14 |
Solid-state Image Pickup Device And Method For Manufacturing Same
App 20090315132 - KOHYAMA; Yusuke | 2009-12-24 |
Semiconductor device using fuse/anti-fuse system
Grant 7,615,813 - Fukuzumi , et al. November 10, 2 | 2009-11-10 |
SOI bottom pre-doping merged e-SiGe for poly height reduction
Grant 7,605,042 - Kohyama October 20, 2 | 2009-10-20 |
Low-leakage transistor and manufacturing method thereof
Grant 7,550,355 - Kohyama June 23, 2 | 2009-06-23 |
Silicon on insulator device and method of manufacturing the same
Grant 7,537,981 - Kohyama May 26, 2 | 2009-05-26 |
Reduction of short-circuiting between contacts at or near a tensile-compressive boundary
Grant 7,514,752 - Kohyama April 7, 2 | 2009-04-07 |
Back-illuminated Type Solid-state Image Pickup Device And Camera Module Using The Same
App 20090014762 - MATSUO; Mie ; et al. | 2009-01-15 |
Semiconductor Device Using Fuse/Anti-Fuse System and Method of Manufacturing the Same
App 20080012057 - Fukuzumi; Yoshiaki ; et al. | 2008-01-17 |
Silicon On Insulator Device And Method Of Manufacturing The Same
App 20070184589 - KOHYAMA; Yusuke | 2007-08-09 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
Grant 7,235,882 - Nitta , et al. June 26, 2 | 2007-06-26 |
Silicon on insulator device and method of manufacturing the same
Grant 7,227,228 - Kohyama June 5, 2 | 2007-06-05 |
Strained silicon CMOS devices
App 20070108526 - Kohyama; Yusuke | 2007-05-17 |
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
Grant 7,187,027 - Kohyama , et al. March 6, 2 | 2007-03-06 |
Reduction of short-circuiting between contacts at or near a tensile-compressive boundary
App 20070045747 - Kohyama; Yusuke | 2007-03-01 |
Low-leakage transistor and manufacturing method thereof
App 20070048967 - Kohyama; Yusuke | 2007-03-01 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
Grant 7,163,894 - Nitta , et al. January 16, 2 | 2007-01-16 |
SOI bottom pre-doping merged e-SiGe for poly height reduction
App 20060234432 - Kohyama; Yusuke | 2006-10-19 |
Step-embedded SiGe structure for PFET mobility enhancement
App 20060231826 - Kohyama; Yusuke | 2006-10-19 |
Semiconductor device having a hollow region and method of manufacturing the same
Grant 7,075,169 - Minami , et al. July 11, 2 | 2006-07-11 |
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
App 20060124980 - Kohyama; Yusuke ; et al. | 2006-06-15 |
Semiconductor device using damascene technique and manufacturing method therefor
App 20060084273 - Kohyama; Yusuke ; et al. | 2006-04-20 |
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
Grant 7,023,044 - Kohyama , et al. April 4, 2 | 2006-04-04 |
Semiconductor device with SOI region and bulk region and method of manufacture thereof
Grant 6,979,866 - Azuma , et al. December 27, 2 | 2005-12-27 |
Semiconductor device using damascene technique and manufacturing method therefor
Grant 6,977,228 - Kohyama , et al. December 20, 2 | 2005-12-20 |
Silicon on insulator device and method of manufacturing the same
App 20050258485 - Kohyama, Yusuke | 2005-11-24 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
App 20050206002 - Nitta, Hiroyuki ; et al. | 2005-09-22 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
Grant 6,906,419 - Nitta , et al. June 14, 2 | 2005-06-14 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
App 20050023696 - Nitta, Hiroyuki ; et al. | 2005-02-03 |
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
Grant 6,846,733 - Kohyama , et al. January 25, 2 | 2005-01-25 |
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
App 20040262771 - Kohyama, Yusuke ; et al. | 2004-12-30 |
Semiconductor device using fuse/anti-fuse system and method of manufacturing the same
App 20040227260 - Fukuzumi, Yoshiaki ; et al. | 2004-11-18 |
Electric fuse whose dielectric breakdown resistance is controlled by injecting impurities into an insulating film of a capacitor structure, and a method for manufacturing the same
Grant 6,812,542 - Kohyama November 2, 2 | 2004-11-02 |
Semiconductor device using fuse/anti-fuse system
Grant 6,774,439 - Fukuzumi , et al. August 10, 2 | 2004-08-10 |
Semiconductor device having a hollow region and method of manufacturing the same
App 20040124439 - Minami, Yoshihiro ; et al. | 2004-07-01 |
Semiconductor device with SOI region and bulk region and method of manufacture thereof
App 20040108552 - Azuma, Atsushi ; et al. | 2004-06-10 |
Dynamic semiconductor memory device having a trench capacitor
Grant 6,720,606 - Nitayama , et al. April 13, 2 | 2004-04-13 |
Structure of a capacitor section of a dynamic random-access memory
Grant 6,635,933 - Ishibashi , et al. October 21, 2 | 2003-10-21 |
Stacked capacitor-type semiconductor storage device and manufacturing method thereof
App 20030178686 - Kohyama, Yusuke ; et al. | 2003-09-25 |
Semiconductor device using damascene technique and manufacturing method therefor
App 20030162396 - Kohyama, Yusuke ; et al. | 2003-08-28 |
Semiconductor device using damascene technique and manufacturing method therefor
Grant 6,608,356 - Kohyama , et al. August 19, 2 | 2003-08-19 |
Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same
App 20030094645 - Fukuzumi, Yoshiaki ; et al. | 2003-05-22 |
Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same
Grant 6,548,844 - Fukuzumi , et al. April 15, 2 | 2003-04-15 |
Method of manufacturing a semiconductor memory device having a trench capacitor with sufficient capacitance and small junction leak current
Grant 6,534,814 - Iba , et al. March 18, 2 | 2003-03-18 |
Semiconductor device and method for manufacturing the same
Grant 6,448,618 - Inaba , et al. September 10, 2 | 2002-09-10 |
A Semiconductor Memory Device Having A Trench Capacitor
App 20020072183 - Iba, Junichiro ; et al. | 2002-06-13 |
Method for forming storage capacitor having undulated lower electrode for a semiconductor device
Grant 6,403,444 - Fukuzumi , et al. June 11, 2 | 2002-06-11 |
DRAM having a cup-shaped storage node electrode recessed within an insulating layer
Grant 6,362,042 - Hosotani , et al. March 26, 2 | 2002-03-26 |
Structure of a capacitor section of a dynamic random-access memory
App 20020011618 - Ishibashi, Yutaka ; et al. | 2002-01-31 |
Electric fuse whose dielectric breakdown resistance is controlled by injecting impurities into an insulating film of a capacitor structure, and a method for manufacturing the same
App 20020003280 - Kohyama, Yusuke | 2002-01-10 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
App 20010054764 - Nitta, Hiroyuki ; et al. | 2001-12-27 |
Semiconductor memory device and fabrication method thereof
App 20010049185 - Hosotani, Keiji ; et al. | 2001-12-06 |
Semiconductor memory device and fabrication method thereof
App 20010045587 - Hosotani, Keiji ; et al. | 2001-11-29 |
Semiconductor device and method for manufacturing the same
Grant 6,320,260 - Kohyama , et al. November 20, 2 | 2001-11-20 |
Storage capacitor having undulated lower electrode for a semiconductor device
App 20010023110 - Fukuzumi, Yoshiaki ; et al. | 2001-09-20 |
Semiconductor device using fuse/anti-fuse system and method of manufacturing the same
App 20010015472 - Fukuzumi, Yoshiaki ; et al. | 2001-08-23 |
Semiconductor memory device and manufacturing method thereof which make it possible to improve reliability of cell-capacitor and also to simplify the manufacturing processes
App 20010012223 - Kohyama, Yusuke | 2001-08-09 |
Structure of a capacitor section of a dynamic random-access memory
Grant 6,150,690 - Ishibashi , et al. November 21, 2 | 2000-11-21 |
Structure of contact between wiring layers in semiconductor integrated circuit device
Grant RE36,837 - Kohyama August 29, 2 | 2000-08-29 |
Semiconductor device adopting a self-aligned contact structure and method for manufacturing a semiconductor memory device
Grant 6,104,052 - Ozaki , et al. August 15, 2 | 2000-08-15 |
Method of manufacturing a semiconductor memory device having a trench capacitor
Grant 6,100,130 - Iba , et al. August 8, 2 | 2000-08-08 |
DRAM having a cup-shaped storage node electrode recessed within an insulating layer
Grant 6,051,859 - Hosotani , et al. April 18, 2 | 2000-04-18 |
Semiconductor memory device having contact holes of differing structure
Grant 6,020,643 - Fukuzumi , et al. February 1, 2 | 2000-02-01 |
Semiconductor memory device including memory cells having a capacitor on bit line structure
Grant 5,977,583 - Hosotani , et al. November 2, 1 | 1999-11-02 |
Semiconductor device including an improved terminal structure
Grant 5,959,324 - Kohyama September 28, 1 | 1999-09-28 |
Semiconductor device using dual damascene technology and method for manufacturing the same
Grant 5,886,411 - Kohyama March 23, 1 | 1999-03-23 |
Structure of contact between wiring layers in semiconductor integrated circuit device
Grant 5,616,961 - Kohyama April 1, 1 | 1997-04-01 |
Method of manufacturing a semiconductor device
Grant 5,563,085 - Kohyama October 8, 1 | 1996-10-08 |
Trench capacitor cells for a dram having single monocrystalline capacitor electrode
Grant 5,555,520 - Sudo , et al. September 10, 1 | 1996-09-10 |
Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts
Grant 5,545,926 - Kohyama , et al. August 13, 1 | 1996-08-13 |
Gettering of unwanted metal impurity introduced into semiconductor substrate during trench formation
Grant 5,482,869 - Kohyama January 9, 1 | 1996-01-09 |
Dynamic memory cell using hollow post shape channel thin-film transistor
Grant 5,336,917 - Kohyama August 9, 1 | 1994-08-09 |
Semiconductor memory device having a stacked capacitor cell structure
Grant 5,142,639 - Kohyama , et al. August 25, 1 | 1992-08-25 |
Method of manufacturing a semiconductor device including a trench capacitor
Grant 5,066,609 - Yamamoto , et al. November 19, 1 | 1991-11-19 |
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