Patent | Date |
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SRAM cell parameter optimization Grant 9,059,032 - Houston , et al. June 16, 2 | 2015-06-16 |
Sram Cell Parameter Optimization App 20120275207 - Houston; Theodore W. ;   et al. | 2012-11-01 |
Bipolar transistors with resistors Grant 8,217,426 - Kohli July 10, 2 | 2012-07-10 |
Multiple indium implant methods and devices and integrated circuits therefrom Grant 7,960,238 - Kohli , et al. June 14, 2 | 2011-06-14 |
Semiconductor doping with reduced gate edge diode leakage Grant 7,897,496 - Kohli , et al. March 1, 2 | 2011-03-01 |
Use of poly resistor implant to dope poly gates Grant 7,846,783 - Mehrotra , et al. December 7, 2 | 2010-12-07 |
Bipolar Transistors With Resistors App 20100178740 - Kohli; Puneet | 2010-07-15 |
Multiple Indium Implant Methods And Devices And Integrated Circuits Therefrom App 20100164003 - KOHLI; PUNEET ;   et al. | 2010-07-01 |
Formation of fully silicided gate with oxide barrier on the source/drain silicide regions Grant 7,737,015 - Kohli , et al. June 15, 2 | 2010-06-15 |
High threshold NMOS source-drain formation with As, P and C to reduce damage Grant 7,736,983 - Kohli , et al. June 15, 2 | 2010-06-15 |
Use of Poly Resistor Implant to Dope Poly Gates App 20100112764 - Mehrotra; Manoj ;   et al. | 2010-05-06 |
Multiple Spacer And Carbon Implant Comprising Process And Semiconductor Devices Therefrom App 20100084712 - Kohli; Puneet | 2010-04-08 |
Semiconductor device manufactured using a laminated stress layer Grant 7,611,939 - Mehrotra , et al. November 3, 2 | 2009-11-03 |
Highly Conductive Shallow Junction Formation App 20090224319 - Kohli; Puneet | 2009-09-10 |
HIGH THRESHOLD NMOS SOURCE-DRAIN FORMATION WITH As, P AND C TO REDUCE DAMAGE App 20090179280 - Kohli; Puneet ;   et al. | 2009-07-16 |
Semiconductive device fabricated using a raised layer to silicide the gate Grant 7,560,379 - Kohli , et al. July 14, 2 | 2009-07-14 |
Semiconductor Doping With Reduced Gate Edge Diode Leakage App 20090127620 - Kohli; Puneet ;   et al. | 2009-05-21 |
Highly conductive shallow junction formation Grant 7,531,436 - Kohli May 12, 2 | 2009-05-12 |
Method for manufacturing an isolation structure using an energy beam treatment Grant 7,524,777 - Kohli , et al. April 28, 2 | 2009-04-28 |
Bipolar Transistors With Resistors App 20090101988 - Kohli; Puneet | 2009-04-23 |
Method for manufacturing a gate sidewall spacer using an energy beam treatment Grant 7,465,635 - Kohli , et al. December 16, 2 | 2008-12-16 |
Semiconductor Device Manufactured Using a Laminated Stress Layer App 20080277730 - Mehrotra; Manoj ;   et al. | 2008-11-13 |
N-type Semiconductor Component With Improved Dopant Implantation Profile And Method Of Forming Same App 20080268628 - Kohli; Puneet ;   et al. | 2008-10-30 |
Formation of fully silicided gate with oxide barrier on the source/drain silicide regions App 20080206988 - Kohli; Puneet ;   et al. | 2008-08-28 |
Method For Manufacturing An Isolation Structure Using An Energy Beam Treatment App 20080146043 - Kohli; Puneet ;   et al. | 2008-06-19 |
Method For Manufacturing A Gate Sidewall Spacer Using An Energy Beam Treatment App 20080076225 - Kohli; Puneet ;   et al. | 2008-03-27 |
Method For Forming A Pre-metal Dielectric Layer Using An Energy Beam Treatment App 20080076227 - Kohli; Puneet ;   et al. | 2008-03-27 |
Semiconductive device fabricated using a raised layer to silicide the gate App 20070184572 - Kohli; Puneet ;   et al. | 2007-08-09 |
Ultra-shallow arsenic junction formation in silicon germanium Grant 7,163,878 - Kohli , et al. January 16, 2 | 2007-01-16 |
Highly conductive shallow junction formation App 20060183302 - Kohli; Puneet | 2006-08-17 |
Ultra-shallow arsenic junction formation in silicon germanium App 20060105518 - Kohli; Puneet ;   et al. | 2006-05-18 |
Systems, methods and computer program products for assigning at least one task to at least one shift App 20040268349 - Ramakrishnan, Vishwamitra S. ;   et al. | 2004-12-30 |
Systems, methods and computer program products for generating at least one shift schedule App 20040193472 - Ramakrishnan, Vishwamitra S. ;   et al. | 2004-09-30 |