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High speed composite p-channel Si/SiGe heterostructure for field effect devices Grant 7,084,431 - Chu , et al. August 1, 2 | 2006-08-01 |
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Shallow trench isolation structure for strained Si on SiGe App 20050260825 - Koester, Steven John ;   et al. | 2005-11-24 |
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High speed composite p-channel Si/SiGe heterostructure for field effect devices App 20020125475 - Chu, Jack Oon ;   et al. | 2002-09-12 |
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