Koester; Steven John

Patent Applications and Registrations

Patent applications and USPTO patent grants for Koester; Steven John.The latest application filed is for "graphene-based dielectrophoresis sensor and method".

Company Profile

0.16.16

Koester; Steven John - Edina MN
Koester; Steven John - Ossining NY US
Koester; Steven John - Croton-on-Hudson NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Graphene-based Dielectrophoresis Sensor And Method App 20210245172 - Koester; Steven John ; et al.	2021-08-12
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same App 20210220840 - Oh; Sang-Hyun ; et al.	2021-07-22
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same Grant 10,888,875 - Oh , et al. January 12, 2	2021-01-12
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same App 20180361400 - Oh; Sang-Hyun ; et al.	2018-12-20
Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors Grant 8,766,410 - Cai , et al. July 1, 2	2014-07-01
Nano-electro-mechanical DRAM cell Grant 8,432,723 - Chang , et al. April 30, 2	2013-04-30
Nano-electro-mechanical Dram Cell App 20120195102 - Chang; Josephine B. ; et al.	2012-08-02
Embedded DRAM Integrated Circuits with Extremely Thin Silicon-On-Insulator Pass Transistors App 20110233634 - Cai; Jin ; et al.	2011-09-29
Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors Grant 7,985,633 - Cai , et al. July 26, 2	2011-07-26
Embedded DRAM Integrated Circuits With Extremely Thin Silicon-On-Insulator Pass Transistors App 20090108314 - Cai; Jin ; et al.	2009-04-30
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS Grant 7,504,311 - Koester , et al. March 17, 2	2009-03-17
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS Grant 7,282,425 - Koester , et al. October 16, 2	2007-10-16
Structure And Method Of Integrating Compound And Elemental Semiconductors For High-performance Cmos App 20070228484 - KOESTER; STEVEN JOHN ; et al.	2007-10-04
Shallow trench isolation structure for strained Si on SiGe Grant 7,183,175 - Koester , et al. February 27, 2	2007-02-27
Structure and method of integrating compound and elemental semiconductors for high-performace CMOS App 20060172505 - Koester; Steven John ; et al.	2006-08-03
Si/SiGe optoelectronic integrated circuits Grant 7,083,998 - Chu , et al. August 1, 2	2006-08-01
High speed composite p-channel Si/SiGe heterostructure for field effect devices Grant 7,084,431 - Chu , et al. August 1, 2	2006-08-01
Enhanced T-gate structure for modulation doped field effect transistors Grant 6,972,440 - Singh , et al. December 6, 2	2005-12-06
Shallow trench isolation structure for strained Si on SiGe App 20050260825 - Koester, Steven John ; et al.	2005-11-24
High speed composite p-channel Si/SiGe heterostructure for field effect devices Grant 6,858,502 - Chu , et al. February 22, 2	2005-02-22
Si/SiGe optoelectronic integrated circuits App 20050023554 - Chu, Jack Oon ; et al.	2005-02-03
High speed composite p-channel Si/SiGe heterostructure for field effect devices App 20040227154 - Chu, Jack Oon ; et al.	2004-11-18
Si/SiGe optoelectronic integrated circuits Grant 6,784,466 - Chu , et al. August 31, 2	2004-08-31
Shallow trench isolation structure for strained Si on SiGe App 20040164373 - Koester, Steven John ; et al.	2004-08-26
Enhanced T-gate structure for modulation doped field effect transistors App 20040140506 - Singh, Dinkar ; et al.	2004-07-22
Enhanced T-gate structure for modulation doped field effect transistors Grant 6,740,535 - Singh , et al. May 25, 2	2004-05-25
Enhanced T-gate Structure For Modulation Doped Field Effect Transistors App 20040016972 - Singh, Dinkar ; et al.	2004-01-29
Si/SiGe optoelectronic integrated circuits App 20020171077 - Chu, Jack Oon ; et al.	2002-11-21
High speed composite p-channel Si/SiGe heterostructure for field effect devices App 20020125475 - Chu, Jack Oon ; et al.	2002-09-12
High speed composite p-channel Si/SiGe heterostructure for field effect devices Grant 6,350,993 - Chu , et al. February 26, 2	2002-02-26

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