Kodama; Masahito

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kodama; Masahito.The latest application filed is for "semiconductor device and method of manufacturing the same".

Company Profile

1.5.6

Kodama; Masahito - Nagakute JP
KODAMA; Masahito - Nagakute-shi JP
Kodama; Masahito - Komaki-shi JP
Kodama; Masahito - Aichi-ken JP
Kodama; Masahito - Aichi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device and method of manufacturing the same Grant 10,381,469 - Tsuchiya , et al. A	2019-08-13
Semiconductor Device And Method Of Manufacturing The Same App 20160372587 - TSUCHIYA; Yoshinori ; et al.	2016-12-22
Nitride Semiconductor Device And Method Of Manufacturing The Same App 20110316049 - Sugimoto; Masahiro ; et al.	2011-12-29
Group III nitride based semiconductor and production method therefor Grant 7,696,071 - Kodama , et al. April 13, 2	2010-04-13
HEMT including MIS structure App 20080142845 - KODAMA; Masahito ; et al.	2008-06-19
Group III nitride based semiconductor device having trench structure or mesa structure and production method therefor App 20080105954 - KODAMA; Masahito ; et al.	2008-05-08
Group III nitride based semiconductor and production method therefor App 20080105903 - KODAMA; Masahito ; et al.	2008-05-08
Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it Grant 6,844,246 - Nagai , et al. January 18, 2	2005-01-18
Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it App 20040087115 - Nagai, Seiji ; et al.	2004-05-06
Vertical semiconductor device having alternating conductivity semiconductor regions Grant 6,700,175 - Kodama , et al. March 2, 2	2004-03-02
Semiconductor device including lateral MOS element Grant 6,072,215 - Kawaji , et al. June 6, 2	2000-06-06

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