Kobayashi; Heiji

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kobayashi; Heiji.The latest application filed is for "manufacturing method of vertical channel transistor array".

Company Profile

0.13.14

Kobayashi; Heiji - Hsinchu TW
Kobayashi; Heiji - Hsinchu City TW
Kobayashi; Heiji - Tokyo JP
Kobayashi; Heiji - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for fabricating bottom electrode of capacitors of DRAM Grant 8,846,485 - Kobayashi , et al. September 30, 2	2014-09-30
Manufacturing method of vertical channel transistor array Grant 8,536,008 - Kobayashi , et al. September 17, 2	2013-09-17
Manufacturing Method Of Vertical Channel Transistor Array App 20130130471 - Kobayashi; Heiji ; et al.	2013-05-23
Vertical channel transistor array and manufacturing method thereof Grant 8,390,062 - Kobayashi , et al. March 5, 2	2013-03-05
Vertical Channel Transistor Array And Manufacturing Method Thereof App 20120018801 - Kobayashi; Heiji ; et al.	2012-01-26
Method For Fabricating Bottom Electrode Of Capacitors Of Dram App 20120015494 - Kobayashi; Heiji ; et al.	2012-01-19
Method Of Manufacturing Semiconductor Device Capable Of Suppressing Impurity Concentration Reduction In Doped Channel Region Arising From Formation Of Gate Insulating Film App 20100190306 - Tanaka; Yoshinori ; et al.	2010-07-29
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film Grant 7,691,713 - Tanaka , et al. April 6, 2	2010-04-06
Method Of Manufacturing Semiconductor Device Capable Of Suppressing Impurity Concentration Reduction In Doped Channel Region Arising From Formation Of Gate Insulting Film App 20070243687 - Tanaka; Yoshinori ; et al.	2007-10-18
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film Grant 7,244,655 - Tanaka , et al. July 17, 2	2007-07-17
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film App 20060079061 - Tanaka; Yoshinori ; et al.	2006-04-13
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film Grant 6,998,319 - Tanaka , et al. February 14, 2	2006-02-14
Semiconductor device and method of manufacturing the same Grant 6,864,580 - Nakazawa , et al. March 8, 2	2005-03-08
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film App 20040235255 - Tanaka, Yoshinori ; et al.	2004-11-25
Method of fabricating a semiconductor device with a passivation film Grant 6,815,265 - Nakatani , et al. November 9, 2	2004-11-09
Semiconductor chip mounting wafer App 20030160303 - Hirokawa, Taichi ; et al.	2003-08-28
Semiconductor device and method of fabricating the same App 20030146514 - Nakatani, Shinya ; et al.	2003-08-07
Semiconductor device and fabrication process therefor App 20030073280 - Kobayashi, Heiji ; et al.	2003-04-17
Method of manufacturing semiconductor device and semiconductor device App 20030008499 - Kobayashi, Heiji	2003-01-09
Test system and test method of semiconductor device App 20020109522 - Kobayashi, Heiji ; et al.	2002-08-15
Semiconductor device and method of manufacturing the same App 20020096769 - Nakazawa, Shoichiro ; et al.	2002-07-25
Semiconductor device and fabrication process therefor App 20020098686 - Kobayashi, Heiji ; et al.	2002-07-25
Semiconductor device and manufacturing method thereof Grant 6,215,187 - Ooto , et al. April 10, 2	2001-04-10
Method of manufacturing semiconductor device with retrograde wells Grant 5,478,759 - Mametani , et al. December 26, 1	1995-12-26
Snowmobile Grant D278,892 - Kobayashi May 21, 1	1985-05-21

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