Ko; Han-Bong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ko; Han-Bong.The latest application filed is for "nonvolatile memory cells having phase changeable patterns therein for data storage".

Company Profile

1.11.14

Ko; Han-Bong - Hwaseong-si KR
Ko; Han-Bong - Gyeonggi-do N/A KR
KO; Han-Bong - Hwuseong-si KR
Ko; Han-Bong - Gyeongg-do KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Nonvolatile Memory Cells Having Phase Changeable Patterns Therein For Data Storage App 20130234100 - An; Hyeong-Geun ; et al.	2013-09-12
Methods for manufacturing a phase-change memory device Grant 8,445,354 - Ha , et al. May 21, 2	2013-05-21
Nonvolatile memory cells having phase changeable patterns therein for data storage Grant 8,426,840 - An , et al. April 23, 2	2013-04-23
Methods For Manufacturing A Phase-change Memory Device App 20120142161 - HA; Yong-Ho ; et al.	2012-06-07
Methods for manufacturing a phase-change memory device Grant 8,133,429 - Ha , et al. March 13, 2	2012-03-13
Phase-Change Memory Units and Phase-Change Memory Devices Using the Same App 20120032135 - KUH; Bong-Jin ; et al.	2012-02-09
Nonvolatile Memory Device App 20110315946 - KO; Han-Bong ; et al.	2011-12-29
Nonvolatile memory device and method of manufacturing the same Grant 8,012,789 - Ko , et al. September 6, 2	2011-09-06
Nonvolatile Memory Cells Having Phase Changeable Patterns Therein for Data Storage App 20110044098 - An; Hyeong-Geun ; et al.	2011-02-24
Methods of forming phase change memory devices having bottom electrodes Grant 7,824,954 - An , et al. November 2, 2	2010-11-02
Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same Grant 7,817,464 - Kuh , et al. October 19, 2	2010-10-19
Phase-change material layer and phase-change memory device including the phase-change material layer Grant 7,791,932 - Kuh , et al. September 7, 2	2010-09-07
Methods For Manufacturing A Phase-change Memory Device App 20100197076 - Ha; Yong-Ho ; et al.	2010-08-05
Method of forming a chalcogenide compound target Grant 7,727,458 - Ha , et al. June 1, 2	2010-06-01
Nonvolatile memory device and method of manufacturing the same App 20090206318 - Ko; Han-Bong ; et al.	2009-08-20
Phase-changeable memory device and method of manufacturing the same Grant 7,563,639 - Shin , et al. July 21, 2	2009-07-21
Methods of Forming Phase Change Memory Devices Having Bottom Electrodes App 20090017577 - An; Hyeong-Geun ; et al.	2009-01-15
Phase-Change Material Layer and Phase-Change Memory Device Including the Phase-Change Material Layer App 20080073637 - Kuh; Bong-Jin ; et al.	2008-03-27
Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same App 20080075843 - Kuh; Bong-Jin ; et al.	2008-03-27
Chalcogenide Compound Target, Method of Forming the Chalcogenide Compound Target and Method for Manufacturing a Phase-Change Memory Device App 20080075844 - Ha; Yong Ho ; et al.	2008-03-27
Phase Change Memory Cell Employing a GeBiTe Layer as a Phase Change Material Layer, Phase Change Memory Device Including the Same, Electronic System Including the Same and Method of Fabricating the Same App 20070267721 - Kuh; Bong-Jin ; et al.	2007-11-22
Phase-changeable Memory Device And Method Of Manufacturing The Same App 20070243659 - SHIN; Hee-Ju ; et al.	2007-10-18

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