Ko; Chin-Yuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ko; Chin-Yuan.The latest application filed is for "semiconductor device and method of manufacturing the same".

Company Profile

0.8.8

Ko; Chin-Yuan - Hsinchu TW
Ko; Chin-Yuan - Hsin-Chu TW
KO; CHIN-YUAN - HSINCHU CITY TW
Ko; Chin-Yuan - Hsin-Chu City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device and method of manufacturing the same Grant 10,157,907 - Chu , et al. Dec	2018-12-18
Protection circuit for output device Grant 9,979,184 - Chu , et al. May 22, 2	2018-05-22
Two-transistor non-volatile memory cell and related program and read methods Grant 9,780,106 - Lee , et al. October 3, 2	2017-10-03
Semiconductor Device And Method Of Manufacturing The Same App 20170162558 - CHU; YU-LIN ; et al.	2017-06-08
Protection Circuit For Output Device App 20170033557 - CHU; Yu-Lin ; et al.	2017-02-02
Protection circuit Grant 9,553,508 - Chu , et al. January 24, 2	2017-01-24
Semiconductor device and method of manufacturing a semiconductor device Grant 9,240,401 - Kuo , et al. January 19, 2	2016-01-19
Two-Transistor Non-Volatile Memory Cell and Related Program and Read Methods App 20150102397 - Lee; Te-Liang ; et al.	2015-04-16
Two-transistor non-volatile memory cell and related program and read methods Grant 8,947,938 - Lee , et al. February 3, 2	2015-02-03
Semiconductor Device And Method Of Manufacturing A Semiconductor Device App 20140339603 - Kuo; Hsi-Yu ; et al.	2014-11-20
Two-Transistor Non-Volatile Memory Cell and Related Program and Read Methods App 20140085984 - Lee; Te-Liang ; et al.	2014-03-27
Method for testing semiconductor devices Grant 7,453,280 - Liang , et al. November 18, 2	2008-11-18
Double Layer Etch Stop Layer Structure For Advanced Semiconductor Processing Technology App 20080073724 - Liang; Sheng-Hui ; et al.	2008-03-27
One time programming memory cell using MOS device Grant 7,307,880 - Ko , et al. December 11, 2	2007-12-11
One time programming memory cell using MOS device App 20070109852 - Ko; Chin-Yuan ; et al.	2007-05-17

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.