Kluth; George
Patent Applications and Registrations
Patent applications and USPTO patent grants for Kluth; George.The latest application filed is for "metal oxide semiconductor devices having buried gate channels and methods for fabricating the same".
- Kluth; George - Hopewell Junction NY
- Kluth; George - Los Gatos CA
- Kluth; George - Sunnyvale CA
| Patent | Date |
|---|---|
| Method of forming a semiconductor device Grant 8,048,791 - Hargrove , et al. November 1, 2 | 2011-11-01 |
| Metal Oxide Semiconductor Devices Having Capping Layers And Methods For Fabricating The Same App 20100213555 - HARGROVE; Michael ; et al. | 2010-08-26 |
| Metal Oxide Semiconductor Devices Having Buried Gate Channels And Methods For Fabricating The Same App 20100213553 - HARGROVE; Michael ; et al. | 2010-08-26 |
| Titanium barrier for nickel silicidation of a gate electrode Grant 6,730,587 - Bertrand , et al. May 4, 2 | 2004-05-04 |
| Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface Grant 6,495,460 - Bertrand , et al. December 17, 2 | 2002-12-17 |
| Dual layer silicide formation using an aluminum barrier to reduce surface roughness at silicide/junction interface App 20020068444 - Bertrand, Jacques ; et al. | 2002-06-06 |
| Process for fabricating an EEPROM device having a pocket substrate region Grant 6,376,308 - Wang , et al. April 23, 2 | 2002-04-23 |
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