Klersy; Patrick J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Klersy; Patrick J..The latest application filed is for "electrically programmable memory element with improved contacts".

Company Profile

0.12.6

Klersy; Patrick J. - Troy MI
Klersy; Patrick J. - Lake Orion MI
Klersy; Patrick J. - Madison Heights MI
Klersy; Patrick J. - Livonia MI

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Programmable resistance memory element with multi-regioned contact Grant 7,576,350 - Lowrey , et al. August 18, 2	2009-08-18
Electrically programmable memory element with improved contacts Grant 7,407,829 - Lowrey , et al. August 5, 2	2008-08-05
Electrically programmable memory element with improved contacts App 20060110846 - Lowrey; Tyler ; et al.	2006-05-25
Multiple layer phase-change memory Grant 6,998,289 - Hudgens , et al. February 14, 2	2006-02-14
Electrically programmable memory element with improved contacts Grant 6,969,866 - Lowrey , et al. November 29, 2	2005-11-29
Programmable resistance memory element with multi-regioned contact App 20050003602 - Lowrey, Tyler ; et al.	2005-01-06
Electrically programmable memory element with improved contacts App 20040245603 - Lowrey, Tyler ; et al.	2004-12-09
Method of making programmable resistance memory element Grant 6,764,897 - Lowrey , et al. July 20, 2	2004-07-20
Method of making programmable resistance memory element App 20040038445 - Lowrey, Tyler ; et al.	2004-02-26
Multiple layer phrase-change memory Grant 6,674,115 - Hudgens , et al. January 6, 2	2004-01-06
Electrically programmable memory element with multi-regioned contact Grant 6,617,192 - Lowrey , et al. September 9, 2	2003-09-09
Multiple layer phase-change memory App 20030080427 - Hudgens, Stephen J. ; et al.	2003-05-01
Multiple layer phase-change memory App 20030071289 - Hudgens, Stephen J. ; et al.	2003-04-17
Multiple layer phase-change memory Grant 6,507,061 - Hudgens , et al. January 14, 2	2003-01-14
Memory element with memory material comprising phase-change material and dielectric material Grant 6,087,674 - Ovshinsky , et al. July 11, 2	2000-07-11
Method of programming phase-change memory element Grant 6,075,719 - Lowrey , et al. June 13, 2	2000-06-13
Thin-film structure for chalcogenide electrical switching devices and process therefor Grant 5,177,567 - Klersy , et al. January 5, 1	1993-01-05
Method of fabricating stabilized threshold switching material Grant 4,804,490 - Pryor , et al. February 14, 1	1989-02-14

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