Klersy; Patrick

Patent Applications and Registrations

Patent applications and USPTO patent grants for Klersy; Patrick.The latest application filed is for "plasma deposition of amorphous semiconductors at microwave frequencies".

Company Profile

0.21.23

Klersy; Patrick - Ortonville MI
Klersy; Patrick - Lake Orion MI
Klersy; Patrick - Madison Heights MI

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Plasma deposition of amorphous semiconductors at microwave frequencies Grant 8,222,125 - Ovshinsky , et al. July 17, 2	2012-07-17
Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies App 20120115274 - Ovshinsky; Stanford R ; et al.	2012-05-10
Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies App 20120040518 - Ovshinsky; Stanford R. ; et al.	2012-02-16
Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies App 20120040492 - Ovshinsky; Stanford R. ; et al.	2012-02-16
Plasma Deposition Of Amorphous Semiconductors At Microwave Frequencies App 20120040493 - Ovshinsky; Stanford R. ; et al.	2012-02-16
Plasma deposition of amorphous semiconductors at microwave frequencies Grant 8,101,245 - Ovshinsky , et al. January 24, 2	2012-01-24
Programmable resistance memory element Grant 8,089,059 - Klersy January 3, 2	2012-01-03
Plasma deposition of amorphous semiconductors at microwave frequencies Grant 8,048,782 - Ovshinsky , et al. November 1, 2	2011-11-01
Programmable Resistance Memory Element and Method for Making Same App 20110114911 - Klersy; Patrick	2011-05-19
Programmable resistance memory element and method for making same Grant 7,833,823 - Klersy November 16, 2	2010-11-16
Memory element with improved contacts App 20090057645 - Kostylev; Sergey A. ; et al.	2009-03-05
Memory element with improved contacts Grant 7,473,574 - Kostylev , et al. January 6, 2	2009-01-06
Programmable resistance memory element and method for making same App 20080220560 - Klersy; Patrick	2008-09-11
Memory element with improved contacts App 20070235709 - Kostylev; Sergey A. ; et al.	2007-10-11
Electrically programmable memory element Grant 7,253,429 - Klersy , et al. August 7, 2	2007-08-07
Electrically programmable memory element with reduced area of contact App 20060274575 - Lowrey; Tyler ; et al.	2006-12-07
Electrically programmable memory element with reduced area of contact Grant 7,092,286 - Lowrey , et al. August 15, 2	2006-08-15
Electrically programmable memory element with improved contacts Grant 7,023,009 - Kostylev , et al. April 4, 2	2006-04-04
Electrically programmable memory element with reduced area of contact App 20060006443 - Lowrey; Tyler ; et al.	2006-01-12
Electrically programmable memory element with reduced area of contact and method for making same App 20050201136 - Lowrey, Tyler ; et al.	2005-09-15
Electrically programmable memory element with reduced area of contact and method for making same Grant 6,943,365 - Lowrey , et al. September 13, 2	2005-09-13
Method for making programmable resistance memory element Grant 6,927,093 - Lowrey , et al. August 9, 2	2005-08-09
Programmable resistance memory element with layered memory material Grant 6,872,963 - Kostylev , et al. March 29, 2	2005-03-29
Electrically programmable memory element App 20050062132 - Klersy, Patrick ; et al.	2005-03-24
Electrically programmable memory element with improved contacts App 20040256694 - Kostylev, Sergey A. ; et al.	2004-12-23
Electrically programmable memory element with raised pore Grant 6,815,705 - Klersy , et al. November 9, 2	2004-11-09
Metal structure for a phase-change memory device Grant 6,797,979 - Chiang , et al. September 28, 2	2004-09-28
Method for making programmable resistance memory element App 20040175857 - Lowrey, Tyler ; et al.	2004-09-09
Method for making programmable resistance memory element Grant 6,750,079 - Lowrey , et al. June 15, 2	2004-06-15
Programmable resistance memory element with layered memory material App 20040026730 - Kostylev, Sergey A. ; et al.	2004-02-12
Metal structure for a phase-change memory device App 20030193063 - Chiang, Chien ; et al.	2003-10-16
Method for making small pore for use in programmable resistance memory element Grant 6,613,604 - Maimon , et al. September 2, 2	2003-09-02
Metal structure for a phase-change memory device Grant 6,569,705 - Chiang , et al. May 27, 2	2003-05-27
Compositionally modified resistive electrode Grant 6,555,860 - Lowrey , et al. April 29, 2	2003-04-29
Programmable resistance memory element and method for making same App 20030075778 - Klersy, Patrick	2003-04-24
Method for making small pore for use in programmable resistance memory element App 20030027398 - Maimon, Jon ; et al.	2003-02-06
Metal structure for a phase-change memory device App 20020080647 - Chiang, Chien ; et al.	2002-06-27
Method for making programmable resistance memory element App 20020045323 - Lowrey, Tyler ; et al.	2002-04-18
Compositionally modified resistive electrode App 20020038872 - Lowrey, Tyler A. ; et al.	2002-04-04
Electrically programmable memory element with reduced area of contact and method for making same App 20020036931 - Lowrey, Tyler ; et al.	2002-03-28
Electrically programmable memory element with raised pore App 20020017701 - Klersy, Patrick ; et al.	2002-02-14
Composite memory material comprising a mixture of phase-change memory material and dielectric material Grant 5,825,046 - Czubatyj , et al. October 20, 1	1998-10-20
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom Grant 5,534,711 - Ovshinsky , et al. July 9, 1	1996-07-09
Electrically erasable memory elements characterized by reduced current and improved thermal stability Grant 5,534,712 - Ovshinsky , et al. July 9, 1	1996-07-09