Kiyomi; Kazumasa

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kiyomi; Kazumasa.The latest application filed is for "method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device".

Company Profile

0.7.12

Kiyomi; Kazumasa - Ushiku JP
Kiyomi; Kazumasa - Ushiku-shi JP
Kiyomi; Kazumasa - Ibaraki JP
Kiyomi; Kazumasa - Ibaraki-ken JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device Grant 9,112,096 - Fujito , et al. August 18, 2	2015-08-18
Method For Producing Group-iii Nitride Semiconductor Crystal, Group-iii Nitride Semiconductor Substrate, And Semiconductor Light Emitting Device App 20130320394 - Fujito; Kenji ; et al.	2013-12-05
Method For Producing Group-iii Nitride Semiconductor Crystal, Group-iii Nitride Semiconductor Substrate, And Semiconductor Light Emitting Device App 20120305983 - Fujito; Kenji ; et al.	2012-12-06
Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device Grant 8,269,251 - Fujito , et al. September 18, 2	2012-09-18
Nitride Semiconductor Crystal And Production Process Thereof App 20120112320 - KUBO; Shuichi ; et al.	2012-05-10
Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate Grant 8,142,566 - Kiyomi , et al. March 27, 2	2012-03-27
Gallium nitride-based material and method of manufacturing the same Grant 7,794,541 - Shibata , et al. September 14, 2	2010-09-14
Gallium Nitride-based Material And Method Of Manufacturing The Same App 20100162945 - Shibata; Hiroyuki ; et al.	2010-07-01
Method For Producing Group Iii Nitride Semiconductor Crystal, Group Iii Nitride Semiconductor Substrate, And Semiconductor Light- Emitting Device App 20100148212 - Fujito; Kenji ; et al.	2010-06-17
Gallium Nitride-based Material App 20100140536 - SHIBATA; Hiroyuki ; et al.	2010-06-10
Gallium Nitride-based Material And Method Of Manufacturing The Same App 20090081110 - Shibata; Hiroyuki ; et al.	2009-03-26
Nitride Semiconductor Material And Production Process Of Nitride Semiconductor Crystal App 20090026488 - Kiyomi; Kazumasa ; et al.	2009-01-29
Ga-Containing Nitride Semiconductor Single Crystal, Production Method Thereof, and Substrate and Device Using the Crystal App 20080308812 - Kiyomi; Kazumasa ; et al.	2008-12-18
Semiconductor optical device apparatus Grant 6,807,213 - Shimoyama , et al. October 19, 2	2004-10-19
Semiconductor device and method for manufacturing the same Grant 6,744,066 - Shimoyama , et al. June 1, 2	2004-06-01
Semiconductor light-emitting device Grant 6,707,071 - Hashimoto , et al. March 16, 2	2004-03-16
Semiconductor light-emitting device App 20020125488 - Hashimoto, Makiko ; et al.	2002-09-12
Semiconductor device and method for manufacturing the same App 20020014622 - Shimoyama, Kenji ; et al.	2002-02-07
Semiconductor device and method for manufacturing the same App 20010040236 - Shimoyama, Kenji ; et al.	2001-11-15

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