loadpatents
Patent applications and USPTO patent grants for Kinney; Wayne.The latest application filed is for "memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays".
Patent | Date |
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Selective reading of memory with improved accuracy Grant 11,379,286 - Kinney , et al. July 5, 2 | 2022-07-05 |
Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays App 20220157364 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2022-05-19 |
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays Grant 11,276,449 - Ramaswamy , et al. March 15, 2 | 2022-03-15 |
Two-terminal reversibly switchable memory device Grant 11,063,214 - Rinerson , et al. July 13, 2 | 2021-07-13 |
Two-terminal Reversibly Switchable Memory Device App 20210193917 - RINERSON; Darrell ;   et al. | 2021-06-24 |
Memory cell and an array of memory cells Grant 11,037,942 - Ramaswamy , et al. June 15, 2 | 2021-06-15 |
Transistors, Memory Cells and Semiconductor Constructions App 20210175340 - Ramaswamy; Durai Vishak ;   et al. | 2021-06-10 |
Conductive Metal Oxide Structures In Non-volatile Re-writable Memory Devices App 20210098063 - Schloss; Lawrence ;   et al. | 2021-04-01 |
Transistors, memory cells and semiconductor constructions comprising ferroelectric gate dielectric Grant 10,943,986 - Ramaswamy , et al. March 9, 2 | 2021-03-09 |
Memory Element With A Reactive Metal Layer App 20210013262 - CHEVALLIER; Christophe J. ;   et al. | 2021-01-14 |
Memory element with a reactive metal layer Grant 10,833,125 - Chevallier , et al. November 10, 2 | 2020-11-10 |
Conductive metal oxide structures in non-volatile re-writable memory devices Grant 10,803,935 - Schloss , et al. October 13, 2 | 2020-10-13 |
Memory element with a reactive metal layer Grant 10,797,106 - Chevallier , et al. October 6, 2 | 2020-10-06 |
Selective Reading Of Memory With Improved Accuracy App 20200257584 - A1 | 2020-08-13 |
Two-terminal Reversibly Switchable Memory Device App 20200259079 - A1 | 2020-08-13 |
Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays App 20200234751 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2020-07-23 |
Two-terminal reversibly switchable memory device Grant 10,680,171 - Rinerson , et al. | 2020-06-09 |
Memory Cell And An Array Of Memory Cells App 20200152645 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2020-05-14 |
Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays Grant 10,636,471 - Ramaswamy , et al. | 2020-04-28 |
Selective reading of memory with improved accuracy Grant 10,585,735 - Kinney , et al. | 2020-03-10 |
Memory cell and an array of memory cells Grant 10,553,595 - Ramaswamy , et al. Fe | 2020-02-04 |
Conductive Metal Oxide Structures In Non-volatile Re-writable Memory Devices App 20190371396 - Schloss; Lawrence ;   et al. | 2019-12-05 |
Memory Element With A Reactive Metal Layer App 20190305047 - CHEVALLIER; Christophe J. ;   et al. | 2019-10-03 |
Writing to cross-point non-volatile memory Grant 10,431,285 - Wang , et al. O | 2019-10-01 |
Memory element with a reactive metal layer Grant 10,340,312 - Chevallier , et al. | 2019-07-02 |
Two-terminal Reversibly Switchable Memory Device App 20190173006 - RINERSON; Darrell ;   et al. | 2019-06-06 |
Conductive metal oxide structures in non-volatile re-writable memory devices Grant 10,311,950 - Schloss , et al. | 2019-06-04 |
Writing To Cross-point Non-volatile Memory App 20190139591 - Wang; Bei ;   et al. | 2019-05-09 |
Two-terminal reversibly switchable memory device Grant 10,224,480 - Rinerson , et al. | 2019-03-05 |
Writing to cross-point non-volatile memory Grant 10,153,026 - Wang , et al. Dec | 2018-12-11 |
Memory Cell And An Array Of Memory Cells App 20180294271 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2018-10-11 |
Memory cell and an array of memory cells Grant 10,074,662 - Ramaswamy , et al. September 11, 2 | 2018-09-11 |
Writing To Cross-point Non-volatile Memory App 20180137908 - Wang; Bei ;   et al. | 2018-05-17 |
Two-terminal Reversibly Switchable Memory Device App 20180130946 - Rinerson; Darrell ;   et al. | 2018-05-10 |
Memory Element With A Reactive Metal Layer App 20180122857 - Chevallier; Christophe J. ;   et al. | 2018-05-03 |
Transistors, Memory Cells and Semiconductor Constructions App 20180122917 - Ramaswamy; Durai Vishak ;   et al. | 2018-05-03 |
Conductive Metal Oxide Structures In Non-volatile Re-writable Memory Devices App 20180114573 - Schloss; Lawrence ;   et al. | 2018-04-26 |
Writing to cross-point non-volatile memory Grant 9,928,894 - Wang , et al. March 27, 2 | 2018-03-27 |
Transistors, memory cells and semiconductor constructions Grant 9,882,016 - Ramaswamy , et al. January 30, 2 | 2018-01-30 |
Writing To Cross-point Non-volatile Memory App 20180005682 - Wang; Bei ;   et al. | 2018-01-04 |
Two-terminal reversibly switchable memory device Grant 9,831,425 - Rinerson , et al. November 28, 2 | 2017-11-28 |
Selective Reading Of Memory With Improved Accuracy App 20170322840 - Kinney; Wayne ;   et al. | 2017-11-09 |
Memory element with a reactive metal layer Grant 9,806,130 - Chevallier , et al. October 31, 2 | 2017-10-31 |
Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays App 20170309322 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2017-10-26 |
Conductive metal oxide structures in non-volatile re-writable memory devices Grant 9,767,897 - Schloss , et al. September 19, 2 | 2017-09-19 |
Selective reading of memory with improved accuracy Grant 9,715,419 - Kinney , et al. July 25, 2 | 2017-07-25 |
Memory Element With A Reactive Metal Layer App 20170179197 - Chevallier; Christophe J. ;   et al. | 2017-06-22 |
Transistors, Memory Cells and Semiconductor Constructions App 20170133478 - Ramaswamy; Durai Vishak ;   et al. | 2017-05-11 |
Writing to cross-point non-volatile memory Grant 9,613,676 - Wang , et al. April 4, 2 | 2017-04-04 |
Transistors, memory cells and semiconductor constructions Grant 9,590,066 - Ramaswamy , et al. March 7, 2 | 2017-03-07 |
Memory element with a reactive metal layer Grant 9,570,515 - Chevallier , et al. February 14, 2 | 2017-02-14 |
Memory Cell And An Array Of Memory Cells App 20170033115 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2017-02-02 |
Memory cell and an array of memory cells Grant 9,472,560 - Ramaswamy , et al. October 18, 2 | 2016-10-18 |
Conductive Metal Oxide Structures In Non-volatile Re-writable Memory Devices App 20160267973 - Schloss; Lawrence ;   et al. | 2016-09-15 |
Transistors, Memory Cells and Semiconductor Constructions App 20160133717 - Ramaswamy; Durai Vishak ;   et al. | 2016-05-12 |
Transistors, memory cells and semiconductor constructions Grant 9,263,672 - Ramaswamy , et al. February 16, 2 | 2016-02-16 |
Memory Element With A Reactive Metal Layer App 20160005793 - Chevallier; Christophe J. ;   et al. | 2016-01-07 |
Two-terminal Reversibly Switchable Memory Device App 20150380642 - Rinerson; Darrell ;   et al. | 2015-12-31 |
Memory Cell And An Array Of Memory Cells App 20150364565 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2015-12-17 |
Memory element with a reactive metal layer Grant 9,159,408 - Chevallier , et al. October 13, 2 | 2015-10-13 |
Two-terminal reversibly switchable memory device Grant 9,159,913 - Rinerson , et al. October 13, 2 | 2015-10-13 |
Selective Reading Of Memory With Improved Accuracy App 20150212871 - Kinney; Wayne ;   et al. | 2015-07-30 |
Selective self-reference read Grant 9,025,364 - Kinney , et al. May 5, 2 | 2015-05-05 |
Two-terminal Reversibly Switchable Memory Device App 20150029780 - Rinerson; Darrell ;   et al. | 2015-01-29 |
Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices App 20140367629 - Schloss; Lawrence ;   et al. | 2014-12-18 |
Transistors, Memory Cells and Semiconductor Constructions App 20140332750 - Ramaswamy; Durai Vishak Nirmal ;   et al. | 2014-11-13 |
Conductive metal oxide structures in non volatile re-writable memory devices Grant 8,848,425 - Schloss , et al. September 30, 2 | 2014-09-30 |
Selective Self-reference Read App 20140269029 - Kinney; Wayne ;   et al. | 2014-09-18 |
Transistors, memory cells and semiconductor constructions Grant 8,796,751 - Ramaswamy , et al. August 5, 2 | 2014-08-05 |
Memory Element With a Reactive Metal Layer App 20140211542 - Chevallier; Christophe J. ;   et al. | 2014-07-31 |
Transistors, Memory Cells and Semiconductor Constructions App 20140138753 - Ramaswamy; Nirmal ;   et al. | 2014-05-22 |
Memory element with a reactive metal layer Grant 8,675,389 - Chevallier , et al. March 18, 2 | 2014-03-18 |
Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices App 20140009998 - Schloss; Lawrence ;   et al. | 2014-01-09 |
Method for fabricating multi-resistive state memory devices Grant 8,611,130 - Rinerson , et al. December 17, 2 | 2013-12-17 |
Conductive metal oxide structures in non volatile re writable memory devices Grant 8,565,006 - Schloss , et al. October 22, 2 | 2013-10-22 |
Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices App 20130214233 - Schloss; Lawrence ;   et al. | 2013-08-22 |
Non-volatile memory device ion barrier Grant 8,493,771 - Schloss , et al. July 23, 2 | 2013-07-23 |
Threshold device for a memory array Grant 8,395,928 - Brewer , et al. March 12, 2 | 2013-03-12 |
Conductive metal oxide structures in non-volatile re-writable memory devices Grant 8,358,529 - Schloss , et al. January 22, 2 | 2013-01-22 |
Non-volatile Memory Device Ion Barrier App 20120300535 - Schloss; Lawrence ;   et al. | 2012-11-29 |
Conductive metal oxide structures in non volatile re writable memory devices Grant 8,320,161 - Schloss , et al. November 27, 2 | 2012-11-27 |
Non volatile memory device ion barrier Grant 8,274,817 - Schloss , et al. September 25, 2 | 2012-09-25 |
Two Terminal Re Writeable Non Volatile Ion Transport Memory Device App 20120087174 - RINERSON; DARRELL ;   et al. | 2012-04-12 |
Method For Fabricating Multi Resistive State Memory Devices App 20120064691 - RINERSON; DARRELL ;   et al. | 2012-03-15 |
Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices App 20120043521 - SCHLOSS; LAWRENCE ;   et al. | 2012-02-23 |
Non Volatile Memory Device Ion Barrier App 20120037879 - SCHLOSS; LAWRENCE ;   et al. | 2012-02-16 |
Memory Element With A Reactive Metal Layer App 20120033481 - RINERSON; DARRELL ;   et al. | 2012-02-09 |
Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices App 20120026780 - SCHLOSS; LAWRENCE ;   et al. | 2012-02-02 |
Threshold Device For A Memory Array App 20110291067 - BREWER; JULIE CASPERSON ;   et al. | 2011-12-01 |
Method for fabricating multi-resistive state memory devices Grant 8,062,942 - Rinerson , et al. November 22, 2 | 2011-11-22 |
Tri Layer Metal Oxide Rewritable Non Volatile Two Terminal Memory Element App 20110278532 - RINERSON; DARRELL ;   et al. | 2011-11-17 |
Non-volatile memory device ion barrier Grant 8,045,364 - Schloss , et al. October 25, 2 | 2011-10-25 |
Conductive metal oxide structures in non-volatile re-writable memory devices Grant 8,031,509 - Schloss , et al. October 4, 2 | 2011-10-04 |
Ion barrier cap Grant 8,031,510 - Schloss , et al. October 4, 2 | 2011-10-04 |
Threshold device for a memory array Grant 7,995,371 - Rinerson , et al. August 9, 2 | 2011-08-09 |
Multi-resistive state memory device with conductive oxide electrodes App 20110186803 - Rinerson; Darrell ;   et al. | 2011-08-04 |
Memory using variable tunnel barrier widths Grant 7,985,963 - Rinerson , et al. July 26, 2 | 2011-07-26 |
Ion barrier cap App 20110149636 - Schloss; Lawrence ;   et al. | 2011-06-23 |
Non-volatile memory device ion barrier App 20110149634 - Schloss; Lawrence ;   et al. | 2011-06-23 |
Multi-resistive state memory device with conductive oxide electrodes Grant 7,889,539 - Rinerson , et al. February 15, 2 | 2011-02-15 |
Selection device for re-writable memory Grant 7,884,349 - Rinerson , et al. February 8, 2 | 2011-02-08 |
Conductive metal oxide structures in non-volatile re-writable memory devices App 20100157658 - Schloss; Lawrence ;   et al. | 2010-06-24 |
Multi-resistive state memory device with conductive oxide electrodes App 20100157657 - Rinerson; Darrell ;   et al. | 2010-06-24 |
Multi-resistive state memory device with conductive oxide electrodes Grant 7,633,790 - Rinerson , et al. December 15, 2 | 2009-12-15 |
Two-Terminal Reversibly Switchable Memory Device App 20090303772 - Rinerson; Darrell ;   et al. | 2009-12-10 |
Memory using variable tunnel barrier widths App 20090231906 - Rinerson; Darrell ;   et al. | 2009-09-17 |
Memory using variable tunnel barrier widths Grant 7,538,338 - Rinerson , et al. May 26, 2 | 2009-05-26 |
Multi-resistive state memory device with conductive oxide electrodes App 20090045390 - Rinerson; Darrel ;   et al. | 2009-02-19 |
Threshold device for a memory array App 20090027976 - Brewer; Julie Casperson ;   et al. | 2009-01-29 |
Selection device for Re-Writable memory App 20090016094 - Rinerson; Darrell ;   et al. | 2009-01-15 |
Method for fabricating multi-resistive state memory devices App 20080293196 - Rinerson; Darrell ;   et al. | 2008-11-27 |
Conductive memory device with conductive oxide electrodes Grant 7,400,006 - Rinerson , et al. July 15, 2 | 2008-07-15 |
Multi-resistive state element with reactive metal Grant 7,394,679 - Rinerson , et al. July 1, 2 | 2008-07-01 |
Resistive memory device with a treated interface Grant 7,326,979 - Rinerson , et al. February 5, 2 | 2008-02-05 |
Conductive memory stack with sidewall App 20070158716 - Rinerson; Darrell ;   et al. | 2007-07-12 |
Roller jack assembly and methods of using same App 20070152202 - Kinney; Wayne | 2007-07-05 |
Conductive memory stack with sidewall Grant 7,186,569 - Rinerson , et al. March 6, 2 | 2007-03-06 |
High-density NVRAM Grant 7,180,772 - Rinerson , et al. February 20, 2 | 2007-02-20 |
Multi-resistive state element with reactive metal App 20060245243 - Rinerson; Darrell ;   et al. | 2006-11-02 |
Re-writable memory with multiple memory layers Grant 7,095,643 - Rinerson , et al. August 22, 2 | 2006-08-22 |
Memory using mixed valence conductive oxides App 20060171200 - Rinerson; Darrell ;   et al. | 2006-08-03 |
Multi-resistive state element with reactive metal Grant 7,082,052 - Rinerson , et al. July 25, 2 | 2006-07-25 |
Layout of driver sets in a cross point memory array Grant 7,079,442 - Rinerson , et al. July 18, 2 | 2006-07-18 |
Multi-resistive state material that uses dopants Grant 7,071,008 - Rinerson , et al. July 4, 2 | 2006-07-04 |
Conductive memory device with conductive oxide electrodes Grant 7,067,862 - Rinerson , et al. June 27, 2 | 2006-06-27 |
Cross point memory array with fast access time Grant 7,057,914 - Rinerson , et al. June 6, 2 | 2006-06-06 |
Memory array with high temperature wiring Grant 7,042,035 - Rinerson , et al. May 9, 2 | 2006-05-09 |
2-terminal trapped charge memory device with voltage switchable multi-level resistance Grant 7,038,935 - Rinerson , et al. May 2, 2 | 2006-05-02 |
Memory using variable tunnel barrier widths App 20060050598 - Rinerson; Darrell ;   et al. | 2006-03-09 |
High-density NVRAM App 20060023495 - Rinerson; Darrell ;   et al. | 2006-02-02 |
Providing a reference voltage to a cross point memory array Grant 6,970,375 - Rinerson , et al. November 29, 2 | 2005-11-29 |
Multi-layer conductive memory device Grant 6,965,137 - Kinney , et al. November 15, 2 | 2005-11-15 |
Memory Element Having Islands App 20050243595 - Rinerson, Darrell ;   et al. | 2005-11-03 |
Re-writable memory with multiple memory layers App 20050231992 - Rinerson, Darrell ;   et al. | 2005-10-20 |
Multi-resistive state element with reactive metal App 20050174835 - Rinerson, Darrell ;   et al. | 2005-08-11 |
High-density NVRAM Grant 6,917,539 - Rinerson , et al. July 12, 2 | 2005-07-12 |
Multiple modes of operation in a cross point array Grant 6,909,632 - Rinerson , et al. June 21, 2 | 2005-06-21 |
Re-writable memory with multiple memory layers Grant 6,906,939 - Rinerson , et al. June 14, 2 | 2005-06-14 |
Conductive Memory Stack With Non-uniform Width App 20050101086 - Rinerson, Darrell ;   et al. | 2005-05-12 |
Re-writable memory with non-linear memory element Grant 6,870,755 - Rinerson , et al. March 22, 2 | 2005-03-22 |
Cross point memory array with memory plugs exhibiting a characteristic hysteresis Grant 6,850,429 - Rinerson , et al. February 1, 2 | 2005-02-01 |
Multiple modes of operation in a cross point array App 20050013172 - Rinerson, Darrell ;   et al. | 2005-01-20 |
Cross point memory array using multiple modes of operation Grant 6,834,008 - Rinerson , et al. December 21, 2 | 2004-12-21 |
Cross point memory array using distinct voltages Grant 6,831,854 - Rinerson , et al. December 14, 2 | 2004-12-14 |
Conductive Memory Stack With Sidewall App 20040228172 - Rinerson, Darrell ;   et al. | 2004-11-18 |
Rewritable Memory With Non-linear Memory Element App 20040170040 - Rinerson, Darrell ;   et al. | 2004-09-02 |
Cross point memory array with memory plugs exhibiting a characteristic hysteresis App 20040160807 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Multiplexor having a reference voltage on unselected lines App 20040160841 - Rinerson, Darrell ;   et al. | 2004-08-19 |
2-Terminal trapped charge memory device with voltage switchable multi-level resistance App 20040160812 - Rinerson, Darrell ;   et al. | 2004-08-19 |
High-density NVRAM App 20040160819 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Cross point memory array with fast access time App 20040160848 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Layout of driver sets in a cross point memory array App 20040160847 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Multi-layer Conductive Memory Device App 20040159867 - Kinney, Wayne ;   et al. | 2004-08-19 |
Cross Point Memory Array Using Multiple Modes Of Operation App 20040160818 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Multi-output Multiplexor App 20040160805 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Memory Array Of A Non-volatile Ram App 20040160804 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Line drivers that use minimal metal layers App 20040160846 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Multi-resistive State Material That Uses Dopants App 20040161888 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Memory array with high temperature wiring App 20040159869 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Resistive memory device with a treated interface App 20040159828 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Providing a reference voltage to a cross point memory array App 20040160806 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Line Drivers That Fit Within A Specified Line Pitch App 20040160849 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Conductive memory device with barrier electrodes App 20040159868 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Cross Point Memory Array Using Distinct Voltages App 20040160808 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Re-writable memory with multiple memory layers App 20040160820 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Non-volatile Memory With A Single Transistor And Resistive Memory Element App 20040160817 - Rinerson, Darrell ;   et al. | 2004-08-19 |
Cross point memory array using multiple thin films Grant 6,753,561 - Rinerson , et al. June 22, 2 | 2004-06-22 |
Method of forming a capacitor Grant 5,985,714 - Sandhu , et al. November 16, 1 | 1999-11-16 |
Method for forming a capacitor with electrically interconnected construction Grant 5,654,222 - Sandhu , et al. August 5, 1 | 1997-08-05 |
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