Kim; Sung Lyong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kim; Sung Lyong.The latest application filed is for "power integrated circuit device having embedded high-side power switch".

Company Profile

0.8.4

Kim; Sung Lyong - Seoul KR
Kim; Sung Lyong - Incheon KR
Kim; Sung-lyong - Bucheon-si KR
Kim; Sung-lyong - Gyeonggi-do KR
Kim; Sung-lyong - Suwon KR
Kim, Sung-lyong - Suwon-city KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Mobile phone Grant D641,331 - Kim July 12, 2	2011-07-12
Mobile phone Grant D635,949 - Kim April 12, 2	2011-04-12
High-voltage integrated circuit device including high-voltage resistant diode Grant 7,906,828 - Kim , et al. March 15, 2	2011-03-15
Power integrated circuit device having embedded high-side power switch Grant 7,888,768 - Kim , et al. February 15, 2	2011-02-15
Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit Grant 7,518,209 - Kim , et al. April 14, 2	2009-04-14
High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor Grant 7,309,894 - Jeon , et al. December 18, 2	2007-12-18
Power integrated circuit device having embedded high-side power switch App 20070158681 - Kim; Sung-lyong ; et al.	2007-07-12
High voltage integrated circuit device including high-voltage resistant diode App 20060237815 - Kim; Sung-lyong ; et al.	2006-10-26
High voltage integrated circuit including bipolar transistor within high voltage island area Grant 6,995,453 - Kim , et al. February 7, 2	2006-02-07
Lateral DMOS transistor having reduced surface field Grant 6,888,210 - Jeon , et al. May 3, 2	2005-05-03
High voltage integrated circuit including bipolar transistor within high voltage island area App 20030168710 - Kim, Jong-jib ; et al.	2003-09-11
High voltage semiconductor device having high breakdown voltage isolation region App 20020175392 - Jeon, Chang-Ki ; et al.	2002-11-28

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