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name:-0.010019063949585
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Kim; Kyoung-yeon Patent Filings

Kim; Kyoung-yeon

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kim; Kyoung-yeon.The latest application filed is for "semiconductor device including a gate electrode on a protruding group iii-v material layer and method of manufacturing the semiconductor device".

Company Profile
0.12.13
  • Kim; Kyoung-yeon - Seoul KR
  • Kim; Kyoung-yeon - Seongnam-si KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer
Grant 9,666,706 - Cho , et al. May 30, 2
2017-05-30
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20160322488 - CHO; Young-jin ;   et al.
2016-11-03
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
Grant 9,419,094 - Cho , et al. August 16, 2
2016-08-16
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20160197161 - CHO; Young-jin ;   et al.
2016-07-07
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
Grant 9,343,564 - Cho , et al. May 17, 2
2016-05-17
Semiconductor device including a gate electrode on a protruding group III-V material layer
Grant 9,324,852 - Cho , et al. April 26, 2
2016-04-26
High electron mobility transistor and method of manufacturing the same
Grant 9,231,093 - Jeon , et al. January 5, 2
2016-01-05
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20150255592 - CHO; Young-jin ;   et al.
2015-09-10
High-electron mobility transistor and method of manufacturing the same
Grant 9,117,890 - Kim , et al. August 25, 2
2015-08-25
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20150200285 - CHO; Young-jin ;   et al.
2015-07-16
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
Grant 9,070,706 - Cho , et al. June 30, 2
2015-06-30
Normally-off high electron mobility transistor
Grant 8,890,212 - Jeon , et al. November 18, 2
2014-11-18
High-electron Mobility Transistor And Method Of Manufacturing The Same
App 20140097470 - KIM; Jong-seob ;   et al.
2014-04-10
Normally-off High Electron Mobility Transistor
App 20140091363 - JEON; Woo-chul ;   et al.
2014-04-03
High Electron Mobility Transistor And Method Of Manufacturing The Same
App 20140021511 - JEON; Woo-chul ;   et al.
2014-01-23
High Electron Mobility Transistors And Methods Of Manufacturing The Same
App 20130307026 - HWANG; Sun-kyu ;   et al.
2013-11-21
Semiconductor Device Including Group Iii-v Barrier And Method Of Manufacturing The Semiconductor Device
App 20130119347 - CHO; Young-jin ;   et al.
2013-05-16

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